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Title: Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl 6 SeI 4 single crystals

Abstract

Photoluminescence (PL) properties of semi-insulating Tl 6SeI 4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Finally, since inhomogeneous line broadening and PL fatigue are related to the concentration of defectsmore » or impurities, the measurement of these two parameters is an effective method to screen sample quality.« less

Authors:
 [1];  [2];  [3]; ORCiD logo [1];  [1];  [3];  [4];  [1]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
  2. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering; Chicago State Univ., IL (United States). Dept. of Chemistry and Physics
  3. Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
  4. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering, and Dept. of Chemistry
Publication Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20); US Department of Homeland Security (DHS)
OSTI Identifier:
1494817
Alternate Identifier(s):
OSTI ID: 1247433
Grant/Contract Number:  
NA0002522; DN-077-ARI086-01
Resource Type:
Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 31; Journal Issue: 6; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kostina, S. S., Peters, J. A., Lin, W., Chen, P., Liu, Z., Wang, P. L., Kanatzidis, M. G., and Wessels, B. W. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6 SeI4 single crystals. United States: N. p., 2016. Web. doi:10.1088/0268-1242/31/6/065009.
Kostina, S. S., Peters, J. A., Lin, W., Chen, P., Liu, Z., Wang, P. L., Kanatzidis, M. G., & Wessels, B. W. Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6 SeI4 single crystals. United States. doi:10.1088/0268-1242/31/6/065009.
Kostina, S. S., Peters, J. A., Lin, W., Chen, P., Liu, Z., Wang, P. L., Kanatzidis, M. G., and Wessels, B. W. Thu . "Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6 SeI4 single crystals". United States. doi:10.1088/0268-1242/31/6/065009. https://www.osti.gov/servlets/purl/1494817.
@article{osti_1494817,
title = {Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6 SeI4 single crystals},
author = {Kostina, S. S. and Peters, J. A. and Lin, W. and Chen, P. and Liu, Z. and Wang, P. L. and Kanatzidis, M. G. and Wessels, B. W.},
abstractNote = {Photoluminescence (PL) properties of semi-insulating Tl6SeI4 have been investigated. A broad emission band centered at 1.63 ± 0.02 eV was observed in all samples. The PL emission band is excitonic in nature and is tentatively attributed to a bound exciton emission. PL fatigue (a reduction in PL intensity under prolonged laser excitation) was always observed. The amount of PL fatigue depended on excitation power and temperature. PL fatigue kinetics are described by a stretched exponential with nominal lifetimes in the 10–265 s range. The recovery of the PL occurred within a few seconds of light cessation. The magnitude of PL fatigue in different samples correlated with inhomogeneous line broadening of the 1.63 eV emission band, such that broader bands exhibited more fatigue. An additional luminescence band centered at 1.78 eV was observed which increased in intensity under prolonged laser irradiation. The fatigue phenomenon is tentatively attributed to two mechanisms—the formation of photo-induced defects and the formation of quasi-stable particles. Both of these mechanisms introduce additional radiative and non-radiative recombination channels that lead to a decrease in the PL intensity under prolonged laser irradiation. Finally, since inhomogeneous line broadening and PL fatigue are related to the concentration of defects or impurities, the measurement of these two parameters is an effective method to screen sample quality.},
doi = {10.1088/0268-1242/31/6/065009},
journal = {Semiconductor Science and Technology},
number = 6,
volume = 31,
place = {United States},
year = {2016},
month = {4}
}

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