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Title: Phase engineering of rare earth nickelates by digital synthesis

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5045756 · OSTI ID:1493890
 [1];  [2];  [1];  [3];  [3]; ORCiD logo [4];  [5];  [6];  [3]
  1. Indian Inst. of Science, Bengaluru (India). Dept. of Physics
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Dept. of Condensed Matter Physics and Materials Science
  3. Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  6. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Dublin City Univ., Dublin (Ireland). School of Physical Sciences

Here, we report on the electronic and magnetic properties of a series of [m EuNiO3/p LaNiO3] superlattices (thickness m and/or p = 1 unit cell) epitaxially grown on single crystalline NdGaO3 substrates. The structural symmetry of these films has been investigated by the combination of in-situ reflection high energy electron diffraction and X-ray diffraction measurements. The metal-insulator transition and the magnetic transition temperatures of the short-period superlattices with m ≥ p are modified from the corresponding bulk Eu1–xLaxNiO3 (x=$$\frac{p}{m+p}$$ ) composition. In contrast to the corresponding bulk doped compound with x = 0.67, the [1 EuNiO3/2 LaNiO3] film remains metallic down to at least 2 K without signs of electronic or magnetic transitions. These findings demonstrate the power of the digital synthesis approach to realize electronic and magnetic phases of perovskite nickelates, unattainable in bulk.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
Gordon and Betty Moore Foundation (GBMF); USDOE Office of Science (SC)
Grant/Contract Number:
AC02-06CH11357; AC02-05CH11231
OSTI ID:
1493890
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 113; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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