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Title: Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

Abstract

Here, the interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q 33 as high as –3.2m 4/C 2 and a resulting bulk piezoelectric coefficient d 33 up to –85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few μC/cm 2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few-layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials, and might facilitate the quest toward alternative ultrathin functional devices incorporatingmore » electromechanical response.« less

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5];  [6];  [6]; ORCiD logo [7]; ORCiD logo [7]; ORCiD logo [7]; ORCiD logo [7];  [2]; ORCiD logo [7]; ORCiD logo [7]
  1. Univ. College Dublin, Dublin (Ireland); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. National Academy of Sciences of Ukraine, Kyiv (Ukraine)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Air Force Research Lab, Wright-Patterson Air Force Base, OH (United States); UES, Inc., Beavercreek, OH (United States)
  4. Univ. of Aveiro, Aveiro (Portugal)
  5. Univ. College Dublin, Dublin (Ireland)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
  7. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1493146
Alternate Identifier(s):
OSTI ID: 1493111
Grant/Contract Number:  
AC05-00OR22725; CNMS2017-R49; FG02-09ER46554; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Neumayer, Sabine M., Eliseev, Eugene A., Susner, Michael A., Tselev, Alexander, Rodriguez, Brian J., Brehm, John A., Pantelides, Sokrates T., Panchapakesan, Ganesh, Jesse, Stephen, Kalinin, Sergei V., McGuire, Michael A., Morozovska, Anna N., Maksymovych, Petro, and Balke, Nina. Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.024401.
Neumayer, Sabine M., Eliseev, Eugene A., Susner, Michael A., Tselev, Alexander, Rodriguez, Brian J., Brehm, John A., Pantelides, Sokrates T., Panchapakesan, Ganesh, Jesse, Stephen, Kalinin, Sergei V., McGuire, Michael A., Morozovska, Anna N., Maksymovych, Petro, & Balke, Nina. Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric. United States. doi:10.1103/PhysRevMaterials.3.024401.
Neumayer, Sabine M., Eliseev, Eugene A., Susner, Michael A., Tselev, Alexander, Rodriguez, Brian J., Brehm, John A., Pantelides, Sokrates T., Panchapakesan, Ganesh, Jesse, Stephen, Kalinin, Sergei V., McGuire, Michael A., Morozovska, Anna N., Maksymovych, Petro, and Balke, Nina. Fri . "Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric". United States. doi:10.1103/PhysRevMaterials.3.024401.
@article{osti_1493146,
title = {Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric},
author = {Neumayer, Sabine M. and Eliseev, Eugene A. and Susner, Michael A. and Tselev, Alexander and Rodriguez, Brian J. and Brehm, John A. and Pantelides, Sokrates T. and Panchapakesan, Ganesh and Jesse, Stephen and Kalinin, Sergei V. and McGuire, Michael A. and Morozovska, Anna N. and Maksymovych, Petro and Balke, Nina},
abstractNote = {Here, the interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as –3.2m4/C2 and a resulting bulk piezoelectric coefficient d33 up to –85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few μC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few-layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials, and might facilitate the quest toward alternative ultrathin functional devices incorporating electromechanical response.},
doi = {10.1103/PhysRevMaterials.3.024401},
journal = {Physical Review Materials},
number = 2,
volume = 3,
place = {United States},
year = {2019},
month = {2}
}

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