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Title: Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance

Abstract

Here we report a method to control contributions of bulk and surface states in the topological insulator Bi 2Te 2Se that allows accessing the spin-polarized transport endowed by topological surface states. An intrinsic surface dominant transport is established when cooling the sample to low temperature or reducing the conduction channel length, both achieved in situ in the transport measurements with a four-probe scanning tunneling microscope without the need of further tailoring the sample. The topological surface states show characteristic transport behaviors with mobility about an order of magnitude higher than reported before, and a spin polarization approaching the theoretically predicted value. Our result demonstrates accessibility to the intrinsic high mobility spin transport of topological surface states, which paves a way to realizing topological spintronic devices.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [2];  [3]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  2. Pohang University of Science and Technology (POSTECH), Korea
  3. University of Florida, Gainesville
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1493127
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 17; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Ko, Wonhee, Nguyen, Giang D., Kim, Hoil, Kim, Jun Sung, Zhang, X.-G., and Li, An-Ping. Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.121.176801.
Ko, Wonhee, Nguyen, Giang D., Kim, Hoil, Kim, Jun Sung, Zhang, X.-G., & Li, An-Ping. Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance. United States. doi:10.1103/PhysRevLett.121.176801.
Ko, Wonhee, Nguyen, Giang D., Kim, Hoil, Kim, Jun Sung, Zhang, X.-G., and Li, An-Ping. Wed . "Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance". United States. doi:10.1103/PhysRevLett.121.176801.
@article{osti_1493127,
title = {Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance},
author = {Ko, Wonhee and Nguyen, Giang D. and Kim, Hoil and Kim, Jun Sung and Zhang, X.-G. and Li, An-Ping},
abstractNote = {Here we report a method to control contributions of bulk and surface states in the topological insulator Bi2Te2Se that allows accessing the spin-polarized transport endowed by topological surface states. An intrinsic surface dominant transport is established when cooling the sample to low temperature or reducing the conduction channel length, both achieved in situ in the transport measurements with a four-probe scanning tunneling microscope without the need of further tailoring the sample. The topological surface states show characteristic transport behaviors with mobility about an order of magnitude higher than reported before, and a spin polarization approaching the theoretically predicted value. Our result demonstrates accessibility to the intrinsic high mobility spin transport of topological surface states, which paves a way to realizing topological spintronic devices.},
doi = {10.1103/PhysRevLett.121.176801},
journal = {Physical Review Letters},
number = 17,
volume = 121,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
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Works referenced in this record:

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Topological Insulators in Three Dimensions
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