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Title: Strong emission of THz radiation from GaAs microstructures on Si

Journal Article · · AIP Advances
DOI: https://doi.org/10.1063/1.5079668 · OSTI ID:1492938
 [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [3];  [1];  [1]
  1. Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
  2. Korea Advanced NanoFab Center, Gyeonngi-do (Republic of Korea); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)

Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. As a result, the presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1492938
Report Number(s):
NREL/JA-5K00-73196
Journal Information:
AIP Advances, Vol. 8, Issue 12; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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Figures / Tables (5)