Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Strong emission of THz radiation from GaAs microstructures on Si

Abstract

Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. As a result, the presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [3];  [1];  [1]
+ Show Author Affiliations
  1. Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
  2. Korea Advanced NanoFab Center, Gyeonngi-do (Republic of Korea); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1492938
Report Number(s):
NREL/JA-5K00-73196
Journal ID: ISSN 2158-3226
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 8; Journal Issue: 12; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; epitaxy; femtosecond lasers; semiconductors; terahertz radiation; microstructural properties; photoluminescence spectroscopy; THz time-domain spectroscopy; terahertz time-domain spectroscopy

Citation Formats

Maeng, Inhee, Lee, Gyuseok, Kang, Chul, Ju, Gun Wu, Park, Kwangwook, Son, Seoung -Bum, Lee, Yong -Tak, and Kee, Chul -Sik. Strong emission of THz radiation from GaAs microstructures on Si. United States: N. p., 2018. Web. doi:10.1063/1.5079668.
Copy to clipboard
Maeng, Inhee, Lee, Gyuseok, Kang, Chul, Ju, Gun Wu, Park, Kwangwook, Son, Seoung -Bum, Lee, Yong -Tak, & Kee, Chul -Sik. Strong emission of THz radiation from GaAs microstructures on Si. United States. https://doi.org/10.1063/1.5079668
Copy to clipboard
Maeng, Inhee, Lee, Gyuseok, Kang, Chul, Ju, Gun Wu, Park, Kwangwook, Son, Seoung -Bum, Lee, Yong -Tak, and Kee, Chul -Sik. Fri . "Strong emission of THz radiation from GaAs microstructures on Si". United States. https://doi.org/10.1063/1.5079668. https://www.osti.gov/servlets/purl/1492938.
Copy to clipboard
@article{osti_1492938,
title = {Strong emission of THz radiation from GaAs microstructures on Si},
author = {Maeng, Inhee and Lee, Gyuseok and Kang, Chul and Ju, Gun Wu and Park, Kwangwook and Son, Seoung -Bum and Lee, Yong -Tak and Kee, Chul -Sik},
abstractNote = {Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. As a result, the presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.},
doi = {10.1063/1.5079668},
journal = {AIP Advances},
number = 12,
volume = 8,
place = {United States},
year = {2018},
month = {12}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5079668
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Figures / Tables:

Fig. 1 Fig. 1: (a) Top-view SEM image of a GaAs-microstructure sample. (b) Close-up SEM image of a part of (a). The area indicated as “A” shows step-bunching, an evidence of step-flow crystal growth, while the straight line indicated as “B” shows a facet of a WZ crystal. (c) Low-temperature PL spectrummore » of the sample. The emission peak is observed at 1.464 eV. The inset shows a cross-section SEM image of the sample.« less
All figures and tables (5 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy
journal, June 2011

Wideband THz Time Domain Spectroscopy based on Optical Rectification and Electro-Optic Sampling
journal, October 2013

  • Tomasino, A.; Parisi, A.; Stivala, S.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep03116

Nanoscale surface chemistry over faceted substrates: structure, reactivity and nanotemplates
journal, January 2008

  • Madey, Theodore E.; Chen, Wenhua; Wang, Hao
  • Chemical Society Reviews, Vol. 37, Issue 10
  • DOI: 10.1039/b719551f

Visualization of GaN surface potential using terahertz emission enhanced by local defects
journal, September 2015

  • Sakai, Yuji; Kawayama, Iwao; Nakanishi, Hidetoshi
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep13860

Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires
journal, August 2010

Non-stoichiometric GaAs – prospective material for compact THz emitters
journal, November 2016

  • Beleckaitė, I.; Adomavičius, R.; Butkutė, R.
  • Electronics Letters, Vol. 52, Issue 23
  • DOI: 10.1049/el.2016.2517

Terahertz Emission from Hybrid Perovskites Driven by Ultrafast Charge Separation and Strong Electron-Phonon Coupling
journal, January 2018

  • Guzelturk, Burak; Belisle, Rebecca A.; Smith, Matthew D.
  • Advanced Materials, Vol. 30, Issue 11
  • DOI: 10.1002/adma.201704737

Empirical low-field mobility model for III–V compounds applicable in device simulation codes
journal, March 2000

  • Sotoodeh, M.; Khalid, A. H.; Rezazadeh, A. A.
  • Journal of Applied Physics, Vol. 87, Issue 6
  • DOI: 10.1063/1.372274

Comparative study of terahertz radiation from n-InAs and n-GaAs
journal, January 2007

Cutting-edge terahertz technology
journal, February 2007

Optical Pump Rectification Emission: Route to Terahertz Free-Standing Surface Potential Diagnostics
journal, August 2017

Characteristics of terahertz pulses from antireflective GaAs surfaces with nanopillars
journal, May 2013

  • Kang, Chul; Woo Leem, Jung; Wook Lee, Joong
  • Journal of Applied Physics, Vol. 113, Issue 20
  • DOI: 10.1063/1.4807407

Mechanism for THz generation from InN micropyramid emitters
journal, May 2011

  • Xu, Guibao; Sun, Guan; Ding, Yujie J.
  • Journal of Applied Physics, Vol. 109, Issue 9
  • DOI: 10.1063/1.3584785

Resonant and nonresonant control over matter and light by intense terahertz transients
journal, August 2013

Strong emission of terahertz radiation from nanostructured Ge surfaces
journal, June 2015

  • Kang, Chul; Leem, Jung Woo; Maeng, Inhee
  • Applied Physics Letters, Vol. 106, Issue 26
  • DOI: 10.1063/1.4923372

Exploring Dynamics in the Far-Infrared with Terahertz Spectroscopy
journal, April 2004

  • Schmuttenmaer, Charles A.
  • Chemical Reviews, Vol. 104, Issue 4
  • DOI: 10.1021/cr020685g

Effect of Surface States on Terahertz Emission from the Bi2Se3 Surface
journal, May 2015

  • Zhu, Li-Guo; Kubera, Brian; Fai Mak, Kin
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep10308

Physics of Semiconductor Devices
journal, October 1990

  • Shur, Michael; Singh, Jasprit
  • Physics Today, Vol. 43, Issue 10
  • DOI: 10.1063/1.2810727

Physics of Semiconductor Devices
journal, June 1970

  • Sze, S. M.; Mattis, Daniel C.
  • Physics Today, Vol. 23, Issue 6
  • DOI: 10.1063/1.3022205

Terahertz Optoelectronics
conference, January 1997

Physics of Semiconductor Devices
book, January 2015

Exploring Dynamics in the Far-Infrared with Terahertz Spectroscopy
journal, June 2004

    Sort by:
    [ × clear filter / sort ]

    Figures / Tables found in this record:

    Fig. 1 (p. 2)figure
    Fig. 2 (p. 3)figure
    Fig. 3 (p. 4)figure
    Fig. 4 (p. 5)figure
    Fig. 5 (p. 5)figure
      [ × clear filter / sort ]
      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

      Similar Records in DOE PAGES and OSTI.GOV collections: