Strong emission of THz radiation from GaAs microstructures on Si
- Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
- Korea Advanced NanoFab Center, Gyeonngi-do (Republic of Korea); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. As a result, the presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1492938
- Report Number(s):
- NREL/JA-5K00-73196
- Journal Information:
- AIP Advances, Vol. 8, Issue 12; ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 3 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Enhanced Terahertz Emission of GaAs Microstructures
Strong emission of terahertz radiation from nanostructured Ge surfaces
Improved efficiency of photoconductive THz emitters by increasing the effective contact length of electrodes
Conference
·
2018
·
OSTI ID:1485768
+5 more
Strong emission of terahertz radiation from nanostructured Ge surfaces
Journal Article
·
2015
· Applied Physics Letters
·
OSTI ID:22483107
+3 more
Improved efficiency of photoconductive THz emitters by increasing the effective contact length of electrodes
Journal Article
·
2013
· AIP Advances
·
OSTI ID:22251774
+1 more