Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs

Menk, Lyle Alexander; Baca, Ehren; Blain, Matthew G.; McClain, Jaime L.; Dominguez, Jason James; Smith, Anna; Hollowell, Andrew E.

doi:10.1149/2.0271901jes

Title: Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs

Journal Article · 13 December 2018 · Journal of the Electrochemical Society

DOI: https://doi.org/10.1149/2.0271901jes · OSTI ID:1492855

^[1]; Baca, Ehren ^[1]; Blain, Matthew G. ^[1]; McClain, Jaime L. ^[1]; Dominguez, Jason James ^[1]; Smith, Anna ^[1];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

A methanesulfonic acid (MSA) electrolyte with a single suppressor additive was used for potentiostatic bottom-up filling of copper in mesoscale through silicon vias (TSVs). Conversly, galvanostatic deposition is desirable for production level full wafer plating tools as they are typically not equipped with reference electrodes which are required for potentiostatic plating. Potentiostatic deposition was used to determine the over-potential required for bottom-up TSV filling and the resultant current was measured to establish a range of current densities to investigate for galvanostatic deposition. Galvanostatic plating conditions were then optimized to achieve void-free bottom-up filling in mesoscale TSVs for a range of sample sizes.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1492855

Report Number(s):: SAND-2018-9018J; 667176

Journal Information:: Journal of the Electrochemical Society, Vol. 166, Issue 1; ISSN 0013-4651

Publisher:: The Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (3)

Bromide Ion as a Leveler for High-Speed TSV Filling Sung, Minjae; Yoon, Young; Hong, Jinwoo Journal of The Electrochemical Society, Vol. 166, Issue 13 https://doi.org/10.1149/2.0181913jes	journal	January 2019
Inhibition Effect of CTAB on Electrodeposition of Cu in Micro Via: Experimental and MD Simulation Investigations Wu, Houya; Li, Zhiyi; Wang, Yan Journal of The Electrochemical Society, Vol. 166, Issue 15 https://doi.org/10.1149/2.0651915jes	journal	January 2019
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology Menk, L. A.; Josell, D.; Moffat, T. P. Journal of The Electrochemical Society, Vol. 166, Issue 1 https://doi.org/10.1149/2.0091901jes	journal	November 2018

Figures / Tables (7)

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Electrodeposition - Copper
MEMs
Microelectronics - Semiconductor Processing
3D Interconnects
Through Silicon Vias
TSV