skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches

Abstract

Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×1017 cm-3, which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm2 at 300 A/cm2, and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×1017 cm-3, 8×1017 cm-3, and 1×1019 cm-3, respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1];  [1];  [2];  [2];  [3]; ORCiD logo [3];  [3];  [2];  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1492795
Alternate Identifier(s):
OSTI ID: 1490815
Report Number(s):
SAND-2019-0550J
Journal ID: ISSN 0741-3106; 671646
Grant/Contract Number:  
AC04-94AL85000; NA0003525; AR0000869
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 40; Journal Issue: 3; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION; GaN; nonpolar; vertical p-n diodes; selective-area doping; leakage currents; ideality factor; specific on-resistance; impurity incorporation; 42 ENGINEERING

Citation Formats

Monavarian, M., Pickrell, G., Aragon, A. A., Stricklin, I., Crawford, M. H., Allerman, A. A., Celio, K. C., Leonard, F., Talin, A. A., Armstrong, A. M., and Feezell, D. High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches. United States: N. p., 2019. Web. https://doi.org/10.1109/LED.2019.2892345.
Monavarian, M., Pickrell, G., Aragon, A. A., Stricklin, I., Crawford, M. H., Allerman, A. A., Celio, K. C., Leonard, F., Talin, A. A., Armstrong, A. M., & Feezell, D. High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches. United States. https://doi.org/10.1109/LED.2019.2892345
Monavarian, M., Pickrell, G., Aragon, A. A., Stricklin, I., Crawford, M. H., Allerman, A. A., Celio, K. C., Leonard, F., Talin, A. A., Armstrong, A. M., and Feezell, D. Fri . "High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches". United States. https://doi.org/10.1109/LED.2019.2892345. https://www.osti.gov/servlets/purl/1492795.
@article{osti_1492795,
title = {High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches},
author = {Monavarian, M. and Pickrell, G. and Aragon, A. A. and Stricklin, I. and Crawford, M. H. and Allerman, A. A. and Celio, K. C. and Leonard, F. and Talin, A. A. and Armstrong, A. M. and Feezell, D.},
abstractNote = {Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×1017 cm-3, which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm2 at 300 A/cm2, and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×1017 cm-3, 8×1017 cm-3, and 1×1019 cm-3, respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.},
doi = {10.1109/LED.2019.2892345},
journal = {IEEE Electron Device Letters},
number = 3,
volume = 40,
place = {United States},
year = {2019},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Save / Share:

Works referencing / citing this record:

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes
journal, December 2019

  • Aragon, Andrew; Monavarian, Morteza; Stricklin, Isaac
  • physica status solidi (a), Vol. 217, Issue 7
  • DOI: 10.1002/pssa.201900757

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes
journal, November 2019

  • Alugubelli, Shanthan R.; Fu, Houqiang; Fu, Kai
  • Applied Physics Letters, Vol. 115, Issue 20
  • DOI: 10.1063/1.5127014

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
journal, February 2020

  • Xiao, Ming; Du, Zhonghao; Xie, Jinqiao
  • Applied Physics Letters, Vol. 116, Issue 5
  • DOI: 10.1063/1.5139906