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Title: Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

Abstract

A multiscale modeling platform that supports the “virtual” qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate responses of linear bipolar integrated circuits for different families of components. The simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation-hardness assurance flow. Finally, the platform may reduce some of the costly reliance on testing for all systems.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [2];  [3]
  1. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
  2. California Inst. of Technology (CalTech), La Canada Flintridge, CA (United States). Jet Propulsion Lab., Radiation Effects and Reliability Group
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Electrical and Radiation Sciences
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1492358
Report Number(s):
SAND-2018-14257J
Journal ID: ISSN 0018-9499; 671038
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 66; Journal Issue: 1; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; Bipolar transistor; commercial-off-the-shelf (COTS); enhanced low-dose rate sensitivity (ELDRS); modeling; n-p-n; p-n-p; qualification; total ionizing dose (TID); Computational modeling

Citation Formats

Privat, Aymeric, Barnaby, Hugh J., Adell, Phillipe C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R., and Buchheit, Thomas E. Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies. United States: N. p., 2019. Web. doi:10.1109/TNS.2018.2887235.
Privat, Aymeric, Barnaby, Hugh J., Adell, Phillipe C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R., & Buchheit, Thomas E. Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies. United States. doi:10.1109/TNS.2018.2887235.
Privat, Aymeric, Barnaby, Hugh J., Adell, Phillipe C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R., and Buchheit, Thomas E. Tue . "Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies". United States. doi:10.1109/TNS.2018.2887235.
@article{osti_1492358,
title = {Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies},
author = {Privat, Aymeric and Barnaby, Hugh J. and Adell, Phillipe C. and Tolleson, B. S. and Wang, Y. and Han, X. and Davis, P. and Rax, B. R. and Buchheit, Thomas E.},
abstractNote = {A multiscale modeling platform that supports the “virtual” qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate responses of linear bipolar integrated circuits for different families of components. The simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation-hardness assurance flow. Finally, the platform may reduce some of the costly reliance on testing for all systems.},
doi = {10.1109/TNS.2018.2887235},
journal = {IEEE Transactions on Nuclear Science},
number = 1,
volume = 66,
place = {United States},
year = {2019},
month = {1}
}

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This content will become publicly available on January 1, 2020
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