Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

Privat, Aymeric; Barnaby, Hugh J.; Adell, Phillipe C.; Tolleson, B. S.; Wang, Y.; Han, X.; Davis, P.; Rax, B. R.; Buchheit, Thomas E.

doi:10.1109/TNS.2018.2887235

Title: Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies

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Abstract

A multiscale modeling platform that supports the “virtual” qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate responses of linear bipolar integrated circuits for different families of components. The simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation-hardness assurance flow. Finally, the platform may reduce some of the costly reliance on testing for all systems.

Authors:

^[1];

^[2];

^[1];

^[1]; Han, X. ^[1];

^[1]; Rax, B. R. ^[2]; Buchheit, Thomas E. ^[3]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
California Inst. of Technology (CalTech), La Canada Flintridge, CA (United States). Jet Propulsion Lab., Radiation Effects and Reliability Group
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Electrical and Radiation Sciences

Publication Date:: 2019-01-01

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1492358

Report Number(s):: SAND-2018-14257J
Journal ID: ISSN 0018-9499; 671038

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 66; Journal Issue: 1; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 97 MATHEMATICS AND COMPUTING; Bipolar transistor; commercial-off-the-shelf (COTS); enhanced low-dose rate sensitivity (ELDRS); modeling; n-p-n; p-n-p; qualification; total ionizing dose (TID); Computational modeling

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                    Privat, Aymeric, Barnaby, Hugh J., Adell, Phillipe C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R., and Buchheit, Thomas E. Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies.  United States: N. p., 2019. 
Web.  doi:10.1109/TNS.2018.2887235.

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                    Privat, Aymeric, Barnaby, Hugh J., Adell, Phillipe C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R., & Buchheit, Thomas E. Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies.  United States.  https://doi.org/10.1109/TNS.2018.2887235

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                    Privat, Aymeric, Barnaby, Hugh J., Adell, Phillipe C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R., and Buchheit, Thomas E. Tue .  
"Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies".  United States.  https://doi.org/10.1109/TNS.2018.2887235.  https://www.osti.gov/servlets/purl/1492358.

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@article{osti_1492358,

  title        = {Multiscale Modeling of Total Ionizing Dose Effects in Commercial-off-the-Shelf Parts in Bipolar Technologies},

  author       = {Privat, Aymeric and Barnaby, Hugh J. and Adell, Phillipe C. and Tolleson, B. S. and Wang, Y. and Han, X. and Davis, P. and Rax, B. R. and Buchheit, Thomas E.},

  abstractNote = {A multiscale modeling platform that supports the “virtual” qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction transistor gain degradation that is a function of fabrication process, operational, and environmental inputs. The second uses this information as inputs for radiation-enabled circuit simulations. The prototype platform described in this paper estimates the total ionizing dose and dose rate responses of linear bipolar integrated circuits for different families of components. The simulation and experimental results show good correlation and suggest this platform to be a complementary tool within the radiation-hardness assurance flow. Finally, the platform may reduce some of the costly reliance on testing for all systems.},

  doi          = {10.1109/TNS.2018.2887235},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 1,

  volume       = 66,

  place        = {United States},

  year         = {2019},

  month        = {1}

}

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