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Title: Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Abstract

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

Authors:
 [1];  [2];  [1];  [3];  [4];  [4];  [2];  [1];  [2];  [1];  [2];  [2];  [2];  [2];  [4];  [5];  [6];  [1];  [1];  [7] more »;  [8];  [1];  [2];  [2];  [9];  [1];  [1];  [4];  [4];  [2] « less
  1. Univ. of Bern (Switzerland). Albert Einstein Center for Fundamental Physics. Lab. for High Energy Physics
  2. Univ. of Geneva (Switzerland). Dept. of Nuclear and Corpuscular Physics
  3. Barcelona Inst. of Science and Technology (Spain). Inst. for High Energy Physics (IFAE)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China). Dept. of Modern Physics
  6. Univ. of Geneva (Switzerland). Dept. of Nuclear and Corpuscular Physics; Univ. of Liverpool (United Kingdom). Dept. of Physics
  7. Univ. of Geneva (Switzerland). Dept. of Nuclear and Corpuscular Physics; European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  8. Karlsruhe Inst. of Technology (KIT) (Germany)
  9. Univ. of Liverpool (United Kingdom). Dept. of Physics
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Bern (Switzerland); Univ. of Geneva (Switzerland); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
Sponsoring Org.:
USDOE; European Union (EU); Swiss National Science Foundation (SNSF)
OSTI Identifier:
1491689
Report Number(s):
BNL-210891-2019-JAAM
Journal ID: ISSN 1748-0221
Grant/Contract Number:  
SC0012704; 675587; 20FL20_173601; 200021_169015; 200020_169000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 13; Journal Issue: 10; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; particle tracking detectors; solid state detectors; radiation-hard detectors

Citation Formats

Anders, J., Benoit, M., Braccini, S., Casanova, R., Chen, H., Chen, K., Bello, F. A. Di, Fehr, A., Ferrere, D., Forshaw, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Nessi, M., Perić, I., Rimoldi, M., Sultan, D. M. S., Pinto, M. Vicente Barreto, Vilella, E., Weber, M., Weston, T., Wu, W., Xu, L., and Zaffaroni, E. Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. United States: N. p., 2018. Web. doi:10.1088/1748-0221/13/10/P10004.
Anders, J., Benoit, M., Braccini, S., Casanova, R., Chen, H., Chen, K., Bello, F. A. Di, Fehr, A., Ferrere, D., Forshaw, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Nessi, M., Perić, I., Rimoldi, M., Sultan, D. M. S., Pinto, M. Vicente Barreto, Vilella, E., Weber, M., Weston, T., Wu, W., Xu, L., & Zaffaroni, E. Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation. United States. doi:10.1088/1748-0221/13/10/P10004.
Anders, J., Benoit, M., Braccini, S., Casanova, R., Chen, H., Chen, K., Bello, F. A. Di, Fehr, A., Ferrere, D., Forshaw, D., Golling, T., Gonzalez-Sevilla, S., Iacobucci, G., Kiehn, M., Lanni, F., Liu, H., Meng, L., Merlassino, C., Miucci, A., Nessi, M., Perić, I., Rimoldi, M., Sultan, D. M. S., Pinto, M. Vicente Barreto, Vilella, E., Weber, M., Weston, T., Wu, W., Xu, L., and Zaffaroni, E. Mon . "Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation". United States. doi:10.1088/1748-0221/13/10/P10004. https://www.osti.gov/servlets/purl/1491689.
@article{osti_1491689,
title = {Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation},
author = {Anders, J. and Benoit, M. and Braccini, S. and Casanova, R. and Chen, H. and Chen, K. and Bello, F. A. Di and Fehr, A. and Ferrere, D. and Forshaw, D. and Golling, T. and Gonzalez-Sevilla, S. and Iacobucci, G. and Kiehn, M. and Lanni, F. and Liu, H. and Meng, L. and Merlassino, C. and Miucci, A. and Nessi, M. and Perić, I. and Rimoldi, M. and Sultan, D. M. S. and Pinto, M. Vicente Barreto and Vilella, E. and Weber, M. and Weston, T. and Wu, W. and Xu, L. and Zaffaroni, E.},
abstractNote = {This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.},
doi = {10.1088/1748-0221/13/10/P10004},
journal = {Journal of Instrumentation},
number = 10,
volume = 13,
place = {United States},
year = {2018},
month = {10}
}

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