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Title: Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Journal Article · · Journal of Instrumentation
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  1. Univ. of Bern (Switzerland). Albert Einstein Center for Fundamental Physics. Lab. for High Energy Physics
  2. Univ. of Geneva (Switzerland). Dept. of Nuclear and Corpuscular Physics
  3. Barcelona Inst. of Science and Technology (Spain). Inst. for High Energy Physics (IFAE)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
  5. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China). Dept. of Modern Physics
  6. Univ. of Geneva (Switzerland). Dept. of Nuclear and Corpuscular Physics; Univ. of Liverpool (United Kingdom). Dept. of Physics
  7. Univ. of Geneva (Switzerland). Dept. of Nuclear and Corpuscular Physics; European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  8. Karlsruhe Inst. of Technology (KIT) (Germany)
  9. Univ. of Liverpool (United Kingdom). Dept. of Physics
+ Show Author Affiliations

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Univ. of Bern (Switzerland); Univ. of Geneva (Switzerland); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
Sponsoring Organization:
USDOE; European Union (EU); Swiss National Science Foundation (SNSF)
Grant/Contract Number:
SC0012704; 675587; 20FL20_173601; 200021_169015; 200020_169000
OSTI ID:
1491689
Report Number(s):
BNL-210891-2019-JAAM
Journal Information:
Journal of Instrumentation, Vol. 13, Issue 10; ISSN 1748-0221
Publisher:
Institute of Physics (IOP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

References (8)

A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology journal December 2007
Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade journal January 2016
Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade journal January 2017
Review of Particle Physics journal August 2014
Single- and multi-foils 27 Al(p,3pn) 24 Na activation technique for monitoring the intensity of high-energy beams
  • Curioni, A.; Froeschl, R.; Glaser, M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 858 https://doi.org/10.1016/j.nima.2017.03.058
journal June 2017
Charge-collection properties of irradiated depleted CMOS pixel test structures
  • Mandić, I.; Cindro, V.; Gorišek, A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 903 https://doi.org/10.1016/j.nima.2018.06.062
journal September 2018
Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process journal February 2016
Charge collection studies in irradiated HV-CMOS particle detectors journal April 2016

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