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Title: Influence of Plasmonic Cu x S Interfacing Layer on Photovoltaic Performance of CIZS Quantum Dot Sensitized Solar Cells

Abstract

Charge transfer at the semiconductor/electrolyte interface is an important process that dictates the efficiency of quantum dots solar cells. Hole transfer kinetics remains a sluggish reaction for metal chalcogenide electrodes. In this work we examine the beneficial effect of CuxS nanoparticles on the photoelectrochemical performance of Cu-In-Zn-S (CIZS) quantum dots sensitized solar cells as they promote hole transfer to the S2-/Sn2- redox couple. CuxS nanoparticles if deposited without a protecting layer undergo compositional transformation in sulfur rich electrolytes. Addition of a protecting ZnS layer improves the stability and efficiency of the resulting solar cells. Establishing the hole transport property of CuxS in solar cell offers new ways to improve photovoltaic performance of QDSSC.

Authors:
; ; ; ORCiD logo
Publication Date:
Research Org.:
Univ. of Notre Dame, IN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1491418
Alternate Identifier(s):
OSTI ID: 1609178
Grant/Contract Number:  
FC02-04ER15533
Resource Type:
Published Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Name: Journal of the Electrochemical Society Journal Volume: 166 Journal Issue: 5; Journal ID: ISSN 0013-4651
Publisher:
IOP Publishing - The Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; Electrochemistry; Materials Science

Citation Formats

Muthu, Senthilkumar, Zaiats, Gary, Sridharan, Moorthy Babu, and Kamat, Prashant V. Influence of Plasmonic Cu x S Interfacing Layer on Photovoltaic Performance of CIZS Quantum Dot Sensitized Solar Cells. United States: N. p., 2019. Web. doi:10.1149/2.0221905jes.
Muthu, Senthilkumar, Zaiats, Gary, Sridharan, Moorthy Babu, & Kamat, Prashant V. Influence of Plasmonic Cu x S Interfacing Layer on Photovoltaic Performance of CIZS Quantum Dot Sensitized Solar Cells. United States. https://doi.org/10.1149/2.0221905jes
Muthu, Senthilkumar, Zaiats, Gary, Sridharan, Moorthy Babu, and Kamat, Prashant V. Sat . "Influence of Plasmonic Cu x S Interfacing Layer on Photovoltaic Performance of CIZS Quantum Dot Sensitized Solar Cells". United States. https://doi.org/10.1149/2.0221905jes.
@article{osti_1491418,
title = {Influence of Plasmonic Cu x S Interfacing Layer on Photovoltaic Performance of CIZS Quantum Dot Sensitized Solar Cells},
author = {Muthu, Senthilkumar and Zaiats, Gary and Sridharan, Moorthy Babu and Kamat, Prashant V.},
abstractNote = {Charge transfer at the semiconductor/electrolyte interface is an important process that dictates the efficiency of quantum dots solar cells. Hole transfer kinetics remains a sluggish reaction for metal chalcogenide electrodes. In this work we examine the beneficial effect of CuxS nanoparticles on the photoelectrochemical performance of Cu-In-Zn-S (CIZS) quantum dots sensitized solar cells as they promote hole transfer to the S2-/Sn2- redox couple. CuxS nanoparticles if deposited without a protecting layer undergo compositional transformation in sulfur rich electrolytes. Addition of a protecting ZnS layer improves the stability and efficiency of the resulting solar cells. Establishing the hole transport property of CuxS in solar cell offers new ways to improve photovoltaic performance of QDSSC.},
doi = {10.1149/2.0221905jes},
journal = {Journal of the Electrochemical Society},
number = 5,
volume = 166,
place = {United States},
year = {2019},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1149/2.0221905jes

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