Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide
Abstract
Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. However, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.
- Authors:
-
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Energy Sciences Research
- Texas A & M Univ., College Station, TX (United States). Dept. of Materials Science and Engineering; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
- Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
- Univ. of Huddersfield (United Kingdom). School of Computing and Engineering
- Texas A & M Univ., College Station, TX (United States). Dept. of Materials Science and Engineering
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Energy Sciences Research and Dept. of Mechanical and Materials Engineering
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC)
- OSTI Identifier:
- 1490857
- Grant/Contract Number:
- NE0008415; AC02-05CH11231; AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., and Nastasi, Michael. Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide. United States: N. p., 2018.
Web. doi:10.1038/s41598-018-23426-y.
Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., & Nastasi, Michael. Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide. United States. https://doi.org/10.1038/s41598-018-23426-y
Su, Qing, Ding, Hepeng, Price, Lloyd, Shao, Lin, Hinks, Jonathan A., Greaves, Graeme, Donnelly, Stephen E., Demkowicz, Michael J., and Nastasi, Michael. Thu .
"Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide". United States. https://doi.org/10.1038/s41598-018-23426-y. https://www.osti.gov/servlets/purl/1490857.
@article{osti_1490857,
title = {Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide},
author = {Su, Qing and Ding, Hepeng and Price, Lloyd and Shao, Lin and Hinks, Jonathan A. and Greaves, Graeme and Donnelly, Stephen E. and Demkowicz, Michael J. and Nastasi, Michael},
abstractNote = {Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. However, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.},
doi = {10.1038/s41598-018-23426-y},
journal = {Scientific Reports},
number = 1,
volume = 8,
place = {United States},
year = {Thu Mar 22 00:00:00 EDT 2018},
month = {Thu Mar 22 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
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Works referencing / citing this record:
Mechanical Response of He-Implanted Amorphous SiOC/Crystalline Fe Nanolaminates
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Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite
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Figures / Tables found in this record: