Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Su, Qing; Ding, Hepeng; Price, Lloyd; Shao, Lin; Hinks, Jonathan A.; Greaves, Graeme; Donnelly, Stephen E.; Demkowicz, Michael J.; Nastasi, Michael

doi:10.1038/s41598-018-23426-y

Title: Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Journal Article · 22 March 2018 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-018-23426-y · OSTI ID:1490857

^[1]; Ding, Hepeng ^[2]; Price, Lloyd ^[3]; Shao, Lin ^[3];

^[4];

^[4]; Donnelly, Stephen E. ^[4]; Demkowicz, Michael J. ^[5]; Nastasi, Michael ^[6]

Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Energy Sciences Research
Texas A & M Univ., College Station, TX (United States). Dept. of Materials Science and Engineering; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
Univ. of Huddersfield (United Kingdom). School of Computing and Engineering
Texas A & M Univ., College Station, TX (United States). Dept. of Materials Science and Engineering
Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Energy Sciences Research and Dept. of Mechanical and Materials Engineering

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. However, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC)

Grant/Contract Number:: NE0008415; AC02-05CH11231; AC05-00OR22725

OSTI ID:: 1490857

Journal Information:: Scientific Reports, Vol. 8, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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