Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias
Abstract
This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the freesurface due to non-uniform coupling with electrolyte hydrodynamics Filling is negatively impacted by large lithography-induced reentrant notches that increase the via cross section at the bottom. In contrast, deposition from low chloride electrolytes, proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be advanced thereby giving rise to void-free filling of the TSV.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE; SPP-funded work
- OSTI Identifier:
- 1490759
- Alternate Identifier(s):
- OSTI ID: 1492359
- Report Number(s):
- SAND-2018-14027J
Journal ID: ISSN 0013-4651; /jes/166/1/D3254.atom
- Grant/Contract Number:
- NA0003525; AC04-94AL85000
- Resource Type:
- Published Article
- Journal Name:
- Journal of the Electrochemical Society
- Additional Journal Information:
- Journal Name: Journal of the Electrochemical Society Journal Volume: 166 Journal Issue: 1; Journal ID: ISSN 0013-4651
- Publisher:
- The Electrochemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Josell, D., Menk, L. A., Hollowell, A. E., Blain, M., and Moffat, T. P. Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias. United States: N. p., 2019.
Web. doi:10.1149/2.0321901jes.
Josell, D., Menk, L. A., Hollowell, A. E., Blain, M., & Moffat, T. P. Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias. United States. https://doi.org/10.1149/2.0321901jes
Josell, D., Menk, L. A., Hollowell, A. E., Blain, M., and Moffat, T. P. Sat .
"Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias". United States. https://doi.org/10.1149/2.0321901jes.
@article{osti_1490759,
title = {Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias},
author = {Josell, D. and Menk, L. A. and Hollowell, A. E. and Blain, M. and Moffat, T. P.},
abstractNote = {This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the freesurface due to non-uniform coupling with electrolyte hydrodynamics Filling is negatively impacted by large lithography-induced reentrant notches that increase the via cross section at the bottom. In contrast, deposition from low chloride electrolytes, proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be advanced thereby giving rise to void-free filling of the TSV.},
doi = {10.1149/2.0321901jes},
journal = {Journal of the Electrochemical Society},
number = 1,
volume = 166,
place = {United States},
year = {Sat Jan 12 00:00:00 EST 2019},
month = {Sat Jan 12 00:00:00 EST 2019}
}
https://doi.org/10.1149/2.0321901jes
Web of Science
Figures / Tables:
Works referenced in this record:
Damascene copper electroplating for chip interconnections
journal, September 1998
- Andricacos, P. C.; Uzoh, C.; Dukovic, J. O.
- IBM Journal of Research and Development, Vol. 42, Issue 5
Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry
journal, January 2016
- Luo, Wei; Zhang, Junhong; Chen, Zhipeng
- Electrochemistry, Vol. 84, Issue 7
Through-Silicon-Via (TSV) Filling by Electrodeposition of Cu with Pulse Current at Ultra-Short Duty Cycle
journal, January 2013
- Jin, Sanghyun; Wang, Geon; Yoo, Bongyoung
- Journal of The Electrochemical Society, Vol. 160, Issue 12
SEIRAS Study of Chloride-Mediated Polyether Adsorption on Cu
journal, August 2018
- Liu, Guo-Kun; Zou, Shouzhong; Josell, Daniel
- The Journal of Physical Chemistry C, Vol. 122, Issue 38
Spatial-Temporal Modeling of Extreme Bottom-up Filling of Through-Silicon-Vias
journal, January 2013
- Wheeler, D.; Moffat, T. P.; Josell, D.
- Journal of The Electrochemical Society, Vol. 160, Issue 12
Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor
journal, January 2013
- Kim, Myung Jun; Kim, Hoe Chul; Choe, Seunghoe
- Journal of The Electrochemical Society, Vol. 160, Issue 12
Stochastic Modeling of Polyethylene Glycol as a Suppressor in Copper Electroplating
journal, January 2014
- Yang, Liu; Radisic, Aleksandar; Deconinck, Johan
- Journal of The Electrochemical Society, Vol. 161, Issue 5
An ALE Model for Prediction and Control of the Microvia Fill Process with Two Additives
journal, January 2008
- Tenno, R.; Pohjoranta, A.
- Journal of The Electrochemical Society, Vol. 155, Issue 5
Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism
journal, January 2013
- Yang, Liu; Radisic, Aleksandar; Deconinck, Johan
- Journal of The Electrochemical Society, Vol. 160, Issue 12
Inverse analysis of accelerator distribution in copper through silicon via filling
journal, November 2012
- Matsuoka, Tatsuro; Otsubo, Keiichi; Onishi, Yuki
- Electrochimica Acta, Vol. 82
Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)
journal, March 2015
- Zhang, Yazhou; Ding, Guifu; Wang, Hong
- Journal of Micromechanics and Microengineering, Vol. 25, Issue 4
A path: from electroplating through lithographic masks in electronics to LIGA in MEMS
journal, January 1997
- Romankiw, L. T.
- Electrochimica Acta, Vol. 42, Issue 20-22
Numerical Simulation and Mechanism Analysis of Through-Silicon Via (TSV) Filling Using an Arbitrary Lagrange-Eulerian (ALE) Method
journal, January 2015
- Zhang, Yazhou; Sun, Yunna; Ding, Guifu
- Journal of The Electrochemical Society, Vol. 162, Issue 10
Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias
journal, January 2016
- Josell, D.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 163, Issue 7
Superconformal Bottom-Up Gold Deposition in High Aspect Ratio Through Silicon Vias
journal, January 2017
- Josell, D.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 164, Issue 6
Extreme Bottom-up Filling of Through Silicon Vias and Damascene Trenches with Gold in a Sulfite Electrolyte
journal, January 2013
- Josell, D.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 160, Issue 12
Modeling Extreme Bottom-Up Filling of Through Silicon Vias
journal, January 2012
- Josell, D.; Wheeler, D.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 159, Issue 10
A Method for Microvia-Fill Process Modeling in a Cu Plating System with Additives
journal, January 2007
- Pohjoranta, A.; Tenno, R.
- Journal of The Electrochemical Society, Vol. 154, Issue 10
Parameters Analysis of TSV Filling Models of Distinct Chemical Behaviours of Additives
journal, December 2016
- Wang, Yan; Zhu, Wenhui; Li, Xiang
- Electrochimica Acta, Vol. 221
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
journal, November 2018
- Menk, L. A.; Josell, D.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 166, Issue 1
Copper electroplating into deep microvias for the “SiP” application
journal, May 2011
- Fang, Cheng; Le Corre, Alain; Yon, Dominique
- Microelectronic Engineering, Vol. 88, Issue 5
Extreme Bottom-Up Superfilling of Through-Silicon-Vias by Damascene Processing: Suppressor Disruption, Positive Feedback and Turing Patterns
journal, January 2012
- Moffat, T. P.; Josell, D.
- Journal of The Electrochemical Society, Vol. 159, Issue 4
Superconformal Copper Deposition in Through Silicon Vias by Suppression-Breakdown
journal, January 2018
- Josell, D.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 165, Issue 2
Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias
journal, January 2016
- Josell, D.; Silva, M.; Moffat, T. P.
- Journal of The Electrochemical Society, Vol. 163, Issue 14
TSV plating using copper methanesulfonate electrolyte with single component suppressor
conference, September 2012
- Wu, H. L. Henry; Lee, S. W. Ricky
- 2012 4th Electronic System-Integration Technology Conference (ESTC)
Superconformal film growth: Mechanism and quantification
journal, January 2005
- Moffat, T. P.; Wheeler, D.; Edelstein, M. D.
- IBM Journal of Research and Development, Vol. 49, Issue 1
Superconformal Nickel Deposition in Through Silicon Vias: Experiment and Prediction
journal, January 2018
- Braun, T. M.; Kim, S. -H.; Lee, H. -J.
- Journal of The Electrochemical Society, Vol. 165, Issue 7
Copper Deep Via Filling with Selective Accelerator Deactivation by Polyethyleneimine
journal, January 2013
- Hayase, Masanori; Nagao, Masayuki
- Journal of The Electrochemical Society, Vol. 160, Issue 12
Figures / Tables found in this record: