DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias

Abstract

This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the freesurface due to non-uniform coupling with electrolyte hydrodynamics Filling is negatively impacted by large lithography-induced reentrant notches that increase the via cross section at the bottom. In contrast, deposition from low chloride electrolytes, proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be advanced thereby giving rise to void-free filling of the TSV.

Authors:
ORCiD logo; ORCiD logo; ORCiD logo; ; ORCiD logo
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE; SPP-funded work
OSTI Identifier:
1490759
Alternate Identifier(s):
OSTI ID: 1492359
Report Number(s):
SAND-2018-14027J
Journal ID: ISSN 0013-4651; /jes/166/1/D3254.atom
Grant/Contract Number:  
NA0003525; AC04-94AL85000
Resource Type:
Published Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Name: Journal of the Electrochemical Society Journal Volume: 166 Journal Issue: 1; Journal ID: ISSN 0013-4651
Publisher:
The Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Josell, D., Menk, L. A., Hollowell, A. E., Blain, M., and Moffat, T. P. Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias. United States: N. p., 2019. Web. doi:10.1149/2.0321901jes.
Josell, D., Menk, L. A., Hollowell, A. E., Blain, M., & Moffat, T. P. Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias. United States. https://doi.org/10.1149/2.0321901jes
Josell, D., Menk, L. A., Hollowell, A. E., Blain, M., and Moffat, T. P. Sat . "Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias". United States. https://doi.org/10.1149/2.0321901jes.
@article{osti_1490759,
title = {Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias},
author = {Josell, D. and Menk, L. A. and Hollowell, A. E. and Blain, M. and Moffat, T. P.},
abstractNote = {This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of magnitude smaller in size. For high chloride concentration (i.e., 1 mmol/L) bottom-up deposition is demonstrated with the growth front being convex in shape. Instabilities in filling profile arise as the growth front approaches the freesurface due to non-uniform coupling with electrolyte hydrodynamics Filling is negatively impacted by large lithography-induced reentrant notches that increase the via cross section at the bottom. In contrast, deposition from low chloride electrolytes, proceeds with a passive-active transition on the via sidewalls. For a given applied potential the location of the transition is fixed in time and the growth front is concave in nature reflecting the gradient in chloride surface coverage. Application of a suitable potential wave form enables the location of the sidewall transition to be advanced thereby giving rise to void-free filling of the TSV.},
doi = {10.1149/2.0321901jes},
journal = {Journal of the Electrochemical Society},
number = 1,
volume = 166,
place = {United States},
year = {Sat Jan 12 00:00:00 EST 2019},
month = {Sat Jan 12 00:00:00 EST 2019}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1149/2.0321901jes

Citation Metrics:
Cited by: 19 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Cross-sectioned mm-TSV after 1 hr Cu deposition at the indicated applied potentials in low Ct electrolyte containing 80 μmol/L Cl- + 40 μmol/L TET. All were preceded by 2 min at -0.40 V to mix electrolyte into the alcohol-prewetted features. The patterned substrates were rotating at 400 rpmmore » during deposition. Insets are at 2× relative magnification.« less

Save / Share:

Works referenced in this record:

Damascene copper electroplating for chip interconnections
journal, September 1998

  • Andricacos, P. C.; Uzoh, C.; Dukovic, J. O.
  • IBM Journal of Research and Development, Vol. 42, Issue 5
  • DOI: 10.1147/rd.425.0567

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry
journal, January 2016


Through-Silicon-Via (TSV) Filling by Electrodeposition of Cu with Pulse Current at Ultra-Short Duty Cycle
journal, January 2013

  • Jin, Sanghyun; Wang, Geon; Yoo, Bongyoung
  • Journal of The Electrochemical Society, Vol. 160, Issue 12
  • DOI: 10.1149/2.050312jes

SEIRAS Study of Chloride-Mediated Polyether Adsorption on Cu
journal, August 2018

  • Liu, Guo-Kun; Zou, Shouzhong; Josell, Daniel
  • The Journal of Physical Chemistry C, Vol. 122, Issue 38
  • DOI: 10.1021/acs.jpcc.8b06644

Spatial-Temporal Modeling of Extreme Bottom-up Filling of Through-Silicon-Vias
journal, January 2013

  • Wheeler, D.; Moffat, T. P.; Josell, D.
  • Journal of The Electrochemical Society, Vol. 160, Issue 12
  • DOI: 10.1149/2.040312jes

Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor
journal, January 2013

  • Kim, Myung Jun; Kim, Hoe Chul; Choe, Seunghoe
  • Journal of The Electrochemical Society, Vol. 160, Issue 12
  • DOI: 10.1149/2.037312jes

Stochastic Modeling of Polyethylene Glycol as a Suppressor in Copper Electroplating
journal, January 2014

  • Yang, Liu; Radisic, Aleksandar; Deconinck, Johan
  • Journal of The Electrochemical Society, Vol. 161, Issue 5
  • DOI: 10.1149/2.072405jes

An ALE Model for Prediction and Control of the Microvia Fill Process with Two Additives
journal, January 2008

  • Tenno, R.; Pohjoranta, A.
  • Journal of The Electrochemical Society, Vol. 155, Issue 5
  • DOI: 10.1149/1.2890413

Modeling the Bottom-Up Filling of Through-Silicon vias Through Suppressor Adsorption/Desorption Mechanism
journal, January 2013

  • Yang, Liu; Radisic, Aleksandar; Deconinck, Johan
  • Journal of The Electrochemical Society, Vol. 160, Issue 12
  • DOI: 10.1149/2.010312jes

Inverse analysis of accelerator distribution in copper through silicon via filling
journal, November 2012


Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)
journal, March 2015


A path: from electroplating through lithographic masks in electronics to LIGA in MEMS
journal, January 1997


Numerical Simulation and Mechanism Analysis of Through-Silicon Via (TSV) Filling Using an Arbitrary Lagrange-Eulerian (ALE) Method
journal, January 2015

  • Zhang, Yazhou; Sun, Yunna; Ding, Guifu
  • Journal of The Electrochemical Society, Vol. 162, Issue 10
  • DOI: 10.1149/2.0671510jes

Superconformal Bottom-Up Nickel Deposition in High Aspect Ratio Through Silicon Vias
journal, January 2016

  • Josell, D.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 163, Issue 7
  • DOI: 10.1149/2.1151607jes

Superconformal Bottom-Up Gold Deposition in High Aspect Ratio Through Silicon Vias
journal, January 2017

  • Josell, D.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 164, Issue 6
  • DOI: 10.1149/2.1311706jes

Extreme Bottom-up Filling of Through Silicon Vias and Damascene Trenches with Gold in a Sulfite Electrolyte
journal, January 2013

  • Josell, D.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 160, Issue 12
  • DOI: 10.1149/2.007312jes

Modeling Extreme Bottom-Up Filling of Through Silicon Vias
journal, January 2012

  • Josell, D.; Wheeler, D.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 159, Issue 10
  • DOI: 10.1149/2.009210jes

A Method for Microvia-Fill Process Modeling in a Cu Plating System with Additives
journal, January 2007

  • Pohjoranta, A.; Tenno, R.
  • Journal of The Electrochemical Society, Vol. 154, Issue 10
  • DOI: 10.1149/1.2761638

Parameters Analysis of TSV Filling Models of Distinct Chemical Behaviours of Additives
journal, December 2016


Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
journal, November 2018

  • Menk, L. A.; Josell, D.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 166, Issue 1
  • DOI: 10.1149/2.0091901jes

Copper electroplating into deep microvias for the “SiP” application
journal, May 2011


Extreme Bottom-Up Superfilling of Through-Silicon-Vias by Damascene Processing: Suppressor Disruption, Positive Feedback and Turing Patterns
journal, January 2012

  • Moffat, T. P.; Josell, D.
  • Journal of The Electrochemical Society, Vol. 159, Issue 4
  • DOI: 10.1149/2.040204jes

Superconformal Copper Deposition in Through Silicon Vias by Suppression-Breakdown
journal, January 2018

  • Josell, D.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 165, Issue 2
  • DOI: 10.1149/2.0061802jes

Superconformal Bottom-Up Cobalt Deposition in High Aspect Ratio Through Silicon Vias
journal, January 2016

  • Josell, D.; Silva, M.; Moffat, T. P.
  • Journal of The Electrochemical Society, Vol. 163, Issue 14
  • DOI: 10.1149/2.0861614jes

TSV plating using copper methanesulfonate electrolyte with single component suppressor
conference, September 2012

  • Wu, H. L. Henry; Lee, S. W. Ricky
  • 2012 4th Electronic System-Integration Technology Conference (ESTC)
  • DOI: 10.1109/ESTC.2012.6542053

Superconformal film growth: Mechanism and quantification
journal, January 2005

  • Moffat, T. P.; Wheeler, D.; Edelstein, M. D.
  • IBM Journal of Research and Development, Vol. 49, Issue 1
  • DOI: 10.1147/rd.491.0019

Superconformal Nickel Deposition in Through Silicon Vias: Experiment and Prediction
journal, January 2018

  • Braun, T. M.; Kim, S. -H.; Lee, H. -J.
  • Journal of The Electrochemical Society, Vol. 165, Issue 7
  • DOI: 10.1149/2.0911807jes

Copper Deep Via Filling with Selective Accelerator Deactivation by Polyethyleneimine
journal, January 2013

  • Hayase, Masanori; Nagao, Masayuki
  • Journal of The Electrochemical Society, Vol. 160, Issue 12
  • DOI: 10.1149/2.036312jes

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.