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Title: Epitaxial growth of ultraflat stanene with topological band inversion

Abstract

Here, two-dimensional (2D) topological materials, including quantum spin/anomalous Hall insulators, have attracted intense research efforts owing to their promise for applications ranging from low-power electronics and high-performance thermoelectrics to fault-tolerant quantum computation. One key challenge is to fabricate topological materials with a large energy gap for room-temperature use. Stanene—the tin counterpart of graphene—is a promising material candidate distinguished by its tunable topological states and sizeable bandgap. Recent experiments have successfully fabricated stanene, but none of them have yet observed topological states. Here we demonstrate the growth of high-quality stanene on Cu(111) by low-temperature molecular beam epitaxy. Importantly, we discovered an unusually ultraflat stanene showing an in-plane s–p band inversion together with a spin–orbit-coupling-induced topological gap (~0.3 eV) at the Γ point, which represents a foremost group-IV ultraflat graphene-like material displaying topological features in experiment. The finding of ultraflat stanene opens opportunities for exploring two-dimensional topological physics and device applications.

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [2];  [2];  [3]; ORCiD logo [1];  [1]
  1. Univ. of Science and Technology of China, Hefei (China)
  2. Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  3. Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1490654
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 17; Journal Issue: 12; Journal ID: ISSN 1476-1122
Publisher:
Springer Nature - Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Deng, Jialiang, Xia, Bingyu, Ma, Xiaochuan, Chen, Haoqi, Shan, Huan, Zhai, Xiaofang, Li, Bin, Zhao, Aidi, Xu, Yong, Duan, Wenhui, Zhang, Shou -Cheng, Wang, Bing, and Hou, J. G. Epitaxial growth of ultraflat stanene with topological band inversion. United States: N. p., 2018. Web. doi:10.1038/s41563-018-0203-5.
Deng, Jialiang, Xia, Bingyu, Ma, Xiaochuan, Chen, Haoqi, Shan, Huan, Zhai, Xiaofang, Li, Bin, Zhao, Aidi, Xu, Yong, Duan, Wenhui, Zhang, Shou -Cheng, Wang, Bing, & Hou, J. G. Epitaxial growth of ultraflat stanene with topological band inversion. United States. doi:10.1038/s41563-018-0203-5.
Deng, Jialiang, Xia, Bingyu, Ma, Xiaochuan, Chen, Haoqi, Shan, Huan, Zhai, Xiaofang, Li, Bin, Zhao, Aidi, Xu, Yong, Duan, Wenhui, Zhang, Shou -Cheng, Wang, Bing, and Hou, J. G. Mon . "Epitaxial growth of ultraflat stanene with topological band inversion". United States. doi:10.1038/s41563-018-0203-5.
@article{osti_1490654,
title = {Epitaxial growth of ultraflat stanene with topological band inversion},
author = {Deng, Jialiang and Xia, Bingyu and Ma, Xiaochuan and Chen, Haoqi and Shan, Huan and Zhai, Xiaofang and Li, Bin and Zhao, Aidi and Xu, Yong and Duan, Wenhui and Zhang, Shou -Cheng and Wang, Bing and Hou, J. G.},
abstractNote = {Here, two-dimensional (2D) topological materials, including quantum spin/anomalous Hall insulators, have attracted intense research efforts owing to their promise for applications ranging from low-power electronics and high-performance thermoelectrics to fault-tolerant quantum computation. One key challenge is to fabricate topological materials with a large energy gap for room-temperature use. Stanene—the tin counterpart of graphene—is a promising material candidate distinguished by its tunable topological states and sizeable bandgap. Recent experiments have successfully fabricated stanene, but none of them have yet observed topological states. Here we demonstrate the growth of high-quality stanene on Cu(111) by low-temperature molecular beam epitaxy. Importantly, we discovered an unusually ultraflat stanene showing an in-plane s–p band inversion together with a spin–orbit-coupling-induced topological gap (~0.3 eV) at the Γ point, which represents a foremost group-IV ultraflat graphene-like material displaying topological features in experiment. The finding of ultraflat stanene opens opportunities for exploring two-dimensional topological physics and device applications.},
doi = {10.1038/s41563-018-0203-5},
journal = {Nature Materials},
number = 12,
volume = 17,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
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