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Title: Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS 2 Nanosheets

Abstract

We report that rhenium disulfide (ReS 2) differs fundamentally from other group-VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS 2 is very different in that it is highly spontaneous and substrate-independent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS 2 is uncovered. It is found that the governing mechanism for ReS 2 growth involves two distinct stages. In the first stage, ReS 2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are “pinched” together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under-coordinated S atom protruding out of the ReS 2 plane. This under-coordinated S is “reactive” and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS 2 surface. Lastly, the utility of such vertical ReS 2 arrays in applications where high surface-to-volume ratio and electric-field enhancement are essential, such as surface enhancedmore » Raman spectroscopy, field emission, and solar-based disinfection of bacteria, is demonstrated.« less

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [3]; ORCiD logo [3];  [1];  [2];  [1];  [1];  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States)
  2. New Jersey Institute of Technology, Newark, NJ (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1490616
Alternate Identifier(s):
OSTI ID: 1439258
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 30; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; field emission; photocatalysis; ReS2 nanosheets; solar water disinfection; vertical growth mechanism

Citation Formats

Ghoshal, Debjit, Yoshimura, Anthony, Gupta, Tushar, House, Andrew, Basu, Swastik, Chen, Yanwen, Wang, Tianmeng, Yang, Yang, Shou, Wenjia, Hachtel, Jordan A., Idrobo, Juan Carlos, Lu, Toh-Ming, Basuray, Sagnik, Meunier, Vincent, Shi, Su-Fei, and Koratkar, Nikhil. Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets. United States: N. p., 2018. Web. doi:10.1002/adfm.201801286.
Ghoshal, Debjit, Yoshimura, Anthony, Gupta, Tushar, House, Andrew, Basu, Swastik, Chen, Yanwen, Wang, Tianmeng, Yang, Yang, Shou, Wenjia, Hachtel, Jordan A., Idrobo, Juan Carlos, Lu, Toh-Ming, Basuray, Sagnik, Meunier, Vincent, Shi, Su-Fei, & Koratkar, Nikhil. Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets. United States. doi:10.1002/adfm.201801286.
Ghoshal, Debjit, Yoshimura, Anthony, Gupta, Tushar, House, Andrew, Basu, Swastik, Chen, Yanwen, Wang, Tianmeng, Yang, Yang, Shou, Wenjia, Hachtel, Jordan A., Idrobo, Juan Carlos, Lu, Toh-Ming, Basuray, Sagnik, Meunier, Vincent, Shi, Su-Fei, and Koratkar, Nikhil. Mon . "Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets". United States. doi:10.1002/adfm.201801286. https://www.osti.gov/servlets/purl/1490616.
@article{osti_1490616,
title = {Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets},
author = {Ghoshal, Debjit and Yoshimura, Anthony and Gupta, Tushar and House, Andrew and Basu, Swastik and Chen, Yanwen and Wang, Tianmeng and Yang, Yang and Shou, Wenjia and Hachtel, Jordan A. and Idrobo, Juan Carlos and Lu, Toh-Ming and Basuray, Sagnik and Meunier, Vincent and Shi, Su-Fei and Koratkar, Nikhil},
abstractNote = {We report that rhenium disulfide (ReS2) differs fundamentally from other group-VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS2 is very different in that it is highly spontaneous and substrate-independent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS2 is uncovered. It is found that the governing mechanism for ReS2 growth involves two distinct stages. In the first stage, ReS2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are “pinched” together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under-coordinated S atom protruding out of the ReS2 plane. This under-coordinated S is “reactive” and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS2 surface. Lastly, the utility of such vertical ReS2 arrays in applications where high surface-to-volume ratio and electric-field enhancement are essential, such as surface enhanced Raman spectroscopy, field emission, and solar-based disinfection of bacteria, is demonstrated.},
doi = {10.1002/adfm.201801286},
journal = {Advanced Functional Materials},
number = 30,
volume = 28,
place = {United States},
year = {2018},
month = {5}
}

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