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Title: Achievable noise performance of spectroscopic prototype DEPFET detectors

Abstract

A new generation of spectroscopic X-ray DEPFET detectors has been produced here in the course of the detector development for the Wide Field Imager (WFI) of Athena. These devices served to perform a detailed analysis of the noise composition, which was enabled by the development of appropriate test algorithms. A result of the analysis is the distinction of different components, which sum up to the total noise. In particular the contribution of shot noise, white noise and 1/f noise to the readout noise is determined as well as the signal noise caused by the generation of charge carriers. The resulting parametrization enables the adaptation and optimization of operation modes to given purposes. The studied prototype detectors included 64×64 pixels with a linear gate design and provided an excellent noise, below 1.6 e-ENC at a readout time faster than 10 μs/pixel and a temperature of -80 °C in rolling-shutter operation. This performance is enabled by an extended signal integration time. A further noise reduction is prevented by the signal noise, caused by charge carrier generation. In order to demonstrate the low noise properties of the DEPFET transistor, the measurement conditions were adapted and a noise of 0.95 e-ENC was measured atmore » the expense of the sensor size—by operating only parts of the sensor in window mode—and dynamic range—by using the Al Kα line at about 1.49 keV for calibration.« less

Authors:
 [1];  [1];  [1];  [2]
+ Show Author Affiliations
  1. Max Planck Inst. for Extraterrestrial Physics, Garching (Germany)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Max Planck Inst. for Extraterrestrial Physics, Garching (Germany)
Sponsoring Org.:
USDOE; Max Planck Society (MPG) (Germany); German Aerospace Center (DLR)
OSTI Identifier:
1490418
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 13; Journal Issue: 12; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; imaging spectroscopy; instrumental noise; solid state detectors; X-ray detectors and telescopes

Citation Formats

Treberspurg, W., Meidinger, N., Müller-Seidlitz, J., and Herrmann, S. Achievable noise performance of spectroscopic prototype DEPFET detectors. United States: N. p., 2018. Web. doi:10.1088/1748-0221/13/12/p12001.
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Treberspurg, W., Meidinger, N., Müller-Seidlitz, J., & Herrmann, S. Achievable noise performance of spectroscopic prototype DEPFET detectors. United States. https://doi.org/10.1088/1748-0221/13/12/p12001
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Treberspurg, W., Meidinger, N., Müller-Seidlitz, J., and Herrmann, S. Mon . "Achievable noise performance of spectroscopic prototype DEPFET detectors". United States. https://doi.org/10.1088/1748-0221/13/12/p12001. https://www.osti.gov/servlets/purl/1490418.
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@article{osti_1490418,
title = {Achievable noise performance of spectroscopic prototype DEPFET detectors},
author = {Treberspurg, W. and Meidinger, N. and Müller-Seidlitz, J. and Herrmann, S.},
abstractNote = {A new generation of spectroscopic X-ray DEPFET detectors has been produced here in the course of the detector development for the Wide Field Imager (WFI) of Athena. These devices served to perform a detailed analysis of the noise composition, which was enabled by the development of appropriate test algorithms. A result of the analysis is the distinction of different components, which sum up to the total noise. In particular the contribution of shot noise, white noise and 1/f noise to the readout noise is determined as well as the signal noise caused by the generation of charge carriers. The resulting parametrization enables the adaptation and optimization of operation modes to given purposes. The studied prototype detectors included 64×64 pixels with a linear gate design and provided an excellent noise, below 1.6 e-ENC at a readout time faster than 10 μs/pixel and a temperature of -80 °C in rolling-shutter operation. This performance is enabled by an extended signal integration time. A further noise reduction is prevented by the signal noise, caused by charge carrier generation. In order to demonstrate the low noise properties of the DEPFET transistor, the measurement conditions were adapted and a noise of 0.95 e-ENC was measured at the expense of the sensor size—by operating only parts of the sensor in window mode—and dynamic range—by using the Al Kα line at about 1.49 keV for calibration.},
doi = {10.1088/1748-0221/13/12/p12001},
journal = {Journal of Instrumentation},
number = 12,
volume = 13,
place = {United States},
year = {Mon Dec 03 00:00:00 EST 2018},
month = {Mon Dec 03 00:00:00 EST 2018}
}
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Publisher's Version of Record
https://doi.org/10.1088/1748-0221/13/12/p12001
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Works referenced in this record:

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