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Title: Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique

Abstract

Here, we grew Cd 1-xMn xTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5-7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot.

Authors:
 [1];  [1];  [1];  [2];  [1];  [3];  [2]; ORCiD logo [2];  [4]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States); Alabama A&M Univ., Normal, AL (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); North Carolina State Univ., Raleigh, NC (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River National Lab., Aiken, SC (United States)
Publication Date:
Research Org.:
Savannah River Site (SRS), Aiken, SC (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1490311
Alternate Identifier(s):
OSTI ID: 1489339
Report Number(s):
[SRNL-STI-2018-00717; BNL-210837-2019-JAAM]
[Journal ID: ISSN 0022-0248; PII: S0022024818306389]
Grant/Contract Number:  
[AC09-08SR22470; SC0012704]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
[ Journal Volume: 509; Journal Issue: C]; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Roy, U. N., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Okobiah, O. K., Egarievwe, S. U., and James, R. B. Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique. United States: N. p., 2018. Web. doi:10.1016/j.jcrysgro.2018.12.026.
Roy, U. N., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Okobiah, O. K., Egarievwe, S. U., & James, R. B. Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique. United States. doi:10.1016/j.jcrysgro.2018.12.026.
Roy, U. N., Camarda, G. S., Cui, Y., Gul, R., Hossain, A., Yang, G., Okobiah, O. K., Egarievwe, S. U., and James, R. B. Mon . "Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique". United States. doi:10.1016/j.jcrysgro.2018.12.026. https://www.osti.gov/servlets/purl/1490311.
@article{osti_1490311,
title = {Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique},
author = {Roy, U. N. and Camarda, G. S. and Cui, Y. and Gul, R. and Hossain, A. and Yang, G. and Okobiah, O. K. and Egarievwe, S. U. and James, R. B.},
abstractNote = {Here, we grew Cd1-xMnxTe crystals with a nominal composition of 5% Mn and 95% Cd using the vertical Bridgman technique. We were able to grow crystals from as-received starting material that were free of secondary phases, such as Te inclusions with a size > 1-µm diameter, without adding compensating Cd to the initial charge. The Te precipitations (size < 1-µm diameter) were found to segregate towards the last-to-freeze section of the ingot. Te inclusions with a size 5-7 µm were observed at the grain boundary located near the last-to-freeze section, while the bottom and middle parts of the ingot showed no Te inclusions, even at the grain boundaries. X-ray topographic analysis was used to characterize the distribution of thermal stress in the ingot.},
doi = {10.1016/j.jcrysgro.2018.12.026},
journal = {Journal of Crystal Growth},
number = [C],
volume = [509],
place = {United States},
year = {2018},
month = {12}
}

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Works referencing / citing this record:

Novel Electrodes and Engineered Interfaces for Halide-Semiconductor Radiation Detectors
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