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Title: Vanadium Dioxide Circuits Emulate Neurological Disorders

Abstract

Information in the central nervous system (CNS) is conducted via electrical signals known as action potentials and is encoded in time. Several neurological disorders including depression, Attention Deficit Hyperactivity Disorder (ADHD), originate in faulty brain signaling frequencies. Here, we present a Hodgkin-Huxley model analog for a strongly correlated VO 2 artificial neuron system that undergoes an electrically-driven insulator-metal transition. We demonstrate that tuning of the insulating phase resistance in VO 2 threshold switch circuits can enable direct mimicry of neuronal origins of disorders in the CNS. The results introduce use of circuits based on quantum materials as complementary to model animal studies for neuroscience, especially when precise measurements of local electrical properties or competing parallel paths for conduction in complex neural circuits can be a challenge to identify onset of breakdown or diagnose early symptoms of disease.

Authors:
 [1];  [1];  [2]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
  2. Purdue Univ., West Lafayette, IN (United States). School of Materials Engineering, and School of Electrical and Computer Engineering
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); (NSF); Semiconductor Research Corporation (SRC)
OSTI Identifier:
1490214
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Frontiers in Neuroscience (Online)
Additional Journal Information:
Journal Name: Frontiers in Neuroscience (Online); Journal Volume: 12; Journal ID: ISSN 1662-453X
Publisher:
Frontiers Research Foundation
Country of Publication:
United States
Language:
English
Subject:
60 APPLIED LIFE SCIENCES; Hodgkin-Huxley model; VO2; artificial neurons; central nervous system diseases; strongly correlated systems

Citation Formats

Lin, Jianqiang, Guha, Supratik, and Ramanathan, Shriram. Vanadium Dioxide Circuits Emulate Neurological Disorders. United States: N. p., 2018. Web. doi:10.3389/fnins.2018.00856.
Lin, Jianqiang, Guha, Supratik, & Ramanathan, Shriram. Vanadium Dioxide Circuits Emulate Neurological Disorders. United States. doi:10.3389/fnins.2018.00856.
Lin, Jianqiang, Guha, Supratik, and Ramanathan, Shriram. Fri . "Vanadium Dioxide Circuits Emulate Neurological Disorders". United States. doi:10.3389/fnins.2018.00856. https://www.osti.gov/servlets/purl/1490214.
@article{osti_1490214,
title = {Vanadium Dioxide Circuits Emulate Neurological Disorders},
author = {Lin, Jianqiang and Guha, Supratik and Ramanathan, Shriram},
abstractNote = {Information in the central nervous system (CNS) is conducted via electrical signals known as action potentials and is encoded in time. Several neurological disorders including depression, Attention Deficit Hyperactivity Disorder (ADHD), originate in faulty brain signaling frequencies. Here, we present a Hodgkin-Huxley model analog for a strongly correlated VO2 artificial neuron system that undergoes an electrically-driven insulator-metal transition. We demonstrate that tuning of the insulating phase resistance in VO2 threshold switch circuits can enable direct mimicry of neuronal origins of disorders in the CNS. The results introduce use of circuits based on quantum materials as complementary to model animal studies for neuroscience, especially when precise measurements of local electrical properties or competing parallel paths for conduction in complex neural circuits can be a challenge to identify onset of breakdown or diagnose early symptoms of disease.},
doi = {10.3389/fnins.2018.00856},
journal = {Frontiers in Neuroscience (Online)},
number = ,
volume = 12,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 2 works
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Figures / Tables:

FIGURE 1 FIGURE 1: Experimental details for the VO2 device. (A) The schematic of the VO2 devices under DC probing. (B) The top view of the lateral VO2 device with a “neck-down” layout. The “neck-down” layout leads to lower forward critical transition voltage (Vc) and lower power in the switching operation. (C)more » The typical current vs. voltage characteristic in DC measurement. The voltage sweep is in the sequence of forward (0–0.9 V) and reverse (0.8–0 V) direction. The switch is reversible. The forward critical voltage and reverse voltage are denoted. A current compliance is set at 5mA. Simulation shows a nice match with experiment.« less

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