Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale

Zhao, Wei; Bi, Sheng; Wisinger, Nina Balke; Rack, Philip D.; Ward, Thomas Zac; Kalinin, Sergei V.; Dai, Sheng; Feng, Guang

doi:10.1021/acsami.8b15199

Title: Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale

Journal Article · 12 November 2018 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.8b15199 · OSTI ID:1489566

Zhao, Wei ^[1]; Bi, Sheng ^[1];

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Huazhong University of Science and Technology, Wuhan (China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

In electric double-layer transistors (EDLTs), it is well known that the EDL formed by ionic liquids (ILs) can induce an ultrahigh carrier density at the semiconductor surface, compared to solid dielectric. However, the mechanism of device performance is still not fully understood, especially at a molecular level. In this study, we evaluate the gating performance of amorphous indium gallium zinc oxide (a-IGZO) transistor coupled with a series of imidazolium-based ILs, using an approach combining of molecular dynamics simulation and finite element modeling. Results reveal that the EDL with different ion structures could produce inhomogeneous electric fields at the solid–electrolyte interface, and the heterogeneity of electric field-induced charge distributions at semiconductor surface could reduce the electrical conductance of a-IGZO during gating process. Meanwhile, a resistance network analysis was adopted to bridge the nanoscopic data with the macroscopic transfer characteristics of IL-gated transistor, and showed that our theoretical results could well estimate the gating performance of practical devices. Finally, our findings could provide both new concepts and modeling techniques for IL-gated transistors.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1489566

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 49 Vol. 10; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
amorphous indium gallium zinc oxide
electric double-layer transistor
ionic liquid
liquid gating effect
surface charge homogeneity

Title: Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale

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