Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale
Abstract
In electric double-layer transistors (EDLTs), it is well known that the EDL formed by ionic liquids (ILs) can induce an ultrahigh carrier density at the semiconductor surface, compared to solid dielectric. However, the mechanism of device performance is still not fully understood, especially at a molecular level. In this study, we evaluate the gating performance of amorphous indium gallium zinc oxide (a-IGZO) transistor coupled with a series of imidazolium-based ILs, using an approach combining of molecular dynamics simulation and finite element modeling. Results reveal that the EDL with different ion structures could produce inhomogeneous electric fields at the solid–electrolyte interface, and the heterogeneity of electric field-induced charge distributions at semiconductor surface could reduce the electrical conductance of a-IGZO during gating process. Meanwhile, a resistance network analysis was adopted to bridge the nanoscopic data with the macroscopic transfer characteristics of IL-gated transistor, and showed that our theoretical results could well estimate the gating performance of practical devices. Finally, our findings could provide both new concepts and modeling techniques for IL-gated transistors.
- Authors:
-
[2];
[3];
[2];
[2];
[3];
[1]
- Huazhong University of Science and Technology, Wuhan (China)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Fluid Interface Reactions, Structures and Transport Center (FIRST); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1489566
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 49; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; amorphous indium gallium zinc oxide; electric double-layer transistor; ionic liquid; liquid gating effect; surface charge homogeneity
Citation Formats
Zhao, Wei, Bi, Sheng, Wisinger, Nina Balke, Rack, Philip D., Ward, Thomas Zac, Kalinin, Sergei V., Dai, Sheng, and Feng, Guang. Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale. United States: N. p., 2018.
Web. doi:10.1021/acsami.8b15199.
Zhao, Wei, Bi, Sheng, Wisinger, Nina Balke, Rack, Philip D., Ward, Thomas Zac, Kalinin, Sergei V., Dai, Sheng, & Feng, Guang. Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale. United States. https://doi.org/10.1021/acsami.8b15199
Zhao, Wei, Bi, Sheng, Wisinger, Nina Balke, Rack, Philip D., Ward, Thomas Zac, Kalinin, Sergei V., Dai, Sheng, and Feng, Guang. Tue .
"Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale". United States. https://doi.org/10.1021/acsami.8b15199. https://www.osti.gov/servlets/purl/1489566.
@article{osti_1489566,
title = {Understanding Electric Double-Layer Gating Based on Ionic Liquids: from Nanoscale to Macroscale},
author = {Zhao, Wei and Bi, Sheng and Wisinger, Nina Balke and Rack, Philip D. and Ward, Thomas Zac and Kalinin, Sergei V. and Dai, Sheng and Feng, Guang},
abstractNote = {In electric double-layer transistors (EDLTs), it is well known that the EDL formed by ionic liquids (ILs) can induce an ultrahigh carrier density at the semiconductor surface, compared to solid dielectric. However, the mechanism of device performance is still not fully understood, especially at a molecular level. In this study, we evaluate the gating performance of amorphous indium gallium zinc oxide (a-IGZO) transistor coupled with a series of imidazolium-based ILs, using an approach combining of molecular dynamics simulation and finite element modeling. Results reveal that the EDL with different ion structures could produce inhomogeneous electric fields at the solid–electrolyte interface, and the heterogeneity of electric field-induced charge distributions at semiconductor surface could reduce the electrical conductance of a-IGZO during gating process. Meanwhile, a resistance network analysis was adopted to bridge the nanoscopic data with the macroscopic transfer characteristics of IL-gated transistor, and showed that our theoretical results could well estimate the gating performance of practical devices. Finally, our findings could provide both new concepts and modeling techniques for IL-gated transistors.},
doi = {10.1021/acsami.8b15199},
journal = {ACS Applied Materials and Interfaces},
number = 49,
volume = 10,
place = {United States},
year = {Tue Nov 13 00:00:00 EST 2018},
month = {Tue Nov 13 00:00:00 EST 2018}
}
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