Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Apte, Amey; Krishnamoorthy, Aravind; Hachtel, Jordan Adam; Susarla, Sandhya; Idrobo, Juan Carlos; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Tiwary, Chandra Sekhar; Ajayan, Pulickel M.

doi:10.1021/acs.chemmater.8b03444

Title: Telluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys

Journal Article · 19 September 2018 · Chemistry of Materials

DOI: https://doi.org/10.1021/acs.chemmater.8b03444 · OSTI ID:1489547

Apte, Amey ^[1];

^[2];

^[3]; Susarla, Sandhya ^[1];

^[3];

^[2]; Kalia, Rajiv K. ^[2];

^[2];

^[4]; Ajayan, Pulickel M. ^[1]

Rice Univ., Houston, TX (United States)
Univ. of Southern California, Los Angeles, CA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Rice Univ., Houston, TX (United States); Indian Institute of Technology, West Bengal (India)

Alloying in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has allowed band gap engineering and phase transformation, as well as modulation of electronic properties. However, most of the efforts have been focused on alloying between transition metal cations. Among those that emphasize alloying between chalcogenide anions, the sulfide–selenide combinations are popular with a few reports on selenide–telluride combinations. In this work, we show a facile chemical vapor deposition method to obtain stable alloying between selenide and telluride anions in monolayer MoSe₂_(1–x)Te_2x alloy. These alloys retain the monolayer 2H symmetry and show good photoluminescence and band gap tunability in the near-infrared region. The nature and percentage of alloying is further confirmed and quantified via AFM, XPS, and HAADF-STEM imaging and polarized Raman spectroscopy. The stability of the two chalcogens in the monolayer 2H lattice is also consistent with thermodynamic phase mixing via DFT simulations. In conclusion, the work demonstrates a straightforward method of synthesizing telluride-based 2D TMDC alloys for further studies and emerging applications.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1489547

Journal Information:: Chemistry of Materials, Vol. 30, Issue 20; ISSN 0897-4756

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 33 works

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References (50)

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe₂ Wang, Xingli; Gong, Yongji; Shi, Gang ACS Nano, Vol. 8, Issue 5, p. 5125-5131 https://doi.org/10.1021/nn501175k	journal	April 2014
Atomically Thin MoS2 A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Chemical Vapor Deposition Growth of Monolayer WSe ₂ with Tunable Device Characteristics and Growth Mechanism Study Liu, Bilu; Fathi, Mohammad; Chen, Liang ACS Nano, Vol. 9, Issue 6 https://doi.org/10.1021/acsnano.5b01301	journal	May 2015
Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils Gao, Yang; Liu, Zhibo; Sun, Dong-Ming Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9569	journal	October 2015
Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS ₂ ) Keyshar, Kunttal; Gong, Yongji; Ye, Gonglan Advanced Materials, Vol. 27, Issue 31 https://doi.org/10.1002/adma.201501795	journal	July 2015
Controlled Synthesis of Atomically Thin 1T-TaS ₂ for Tunable Charge Density Wave Phase Transitions Fu, Wei; Chen, Yu; Lin, Junhao Chemistry of Materials, Vol. 28, Issue 21 https://doi.org/10.1021/acs.chemmater.6b02334	journal	October 2016
Metallic VS ₂ Monolayer: A Promising 2D Anode Material for Lithium Ion Batteries Jing, Yu; Zhou, Zhen; Cabrera, Carlos R. The Journal of Physical Chemistry C, Vol. 117, Issue 48 https://doi.org/10.1021/jp410969u	journal	November 2013
Two-dimensional metallic NbS ₂ : growth, optical identification and transport properties Zhao, Sihan; Hotta, Takato; Koretsune, Takashi 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/025027	journal	May 2016
Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy Su, Sheng-Han; Hsu, Yu-Te; Chang, Yung-Huang Small, Vol. 10, Issue 13 https://doi.org/10.1002/smll.201302893	journal	March 2014
Synthesis, Properties, and Applications of Transition Metal-Doped Layered Transition Metal Dichalcogenides Tedstone, Aleksander A.; Lewis, David J.; O’Brien, Paul Chemistry of Materials, Vol. 28, Issue 7 https://doi.org/10.1021/acs.chemmater.6b00430	journal	March 2016
Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors Gao, Jian; Kim, Young Duck; Liang, Liangbo Advanced Materials, Vol. 28, Issue 44 https://doi.org/10.1002/adma.201601104	journal	September 2016
Structural Phase Transitions by Design in Monolayer Alloys Duerloo, Karel-Alexander N.; Reed, Evan J. ACS Nano, Vol. 10, Issue 1 https://doi.org/10.1021/acsnano.5b04359	journal	December 2015
Phase engineering of transition metal dichalcogenides Voiry, Damien; Mohite, Aditya; Chhowalla, Manish Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C5CS00151J	journal	January 2015
Re Doping in 2D Transition Metal Dichalcogenides as a New Route to Tailor Structural Phases and Induced Magnetism Kochat, Vidya; Apte, Amey; Hachtel, Jordan A. Advanced Materials, Vol. 29, Issue 43 https://doi.org/10.1002/adma.201703754	journal	October 2017
Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap Susarla, Sandhya; Kutana, Alex; Hachtel, Jordan A. Advanced Materials, Vol. 29, Issue 35 https://doi.org/10.1002/adma.201702457	journal	July 2017
Spin-orbit engineering in transition metal dichalcogenide alloy monolayers Wang, Gang; Robert, Cedric; Suslu, Aslihan Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms10110	journal	December 2015
Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties Komsa, Hannu-Pekka; Krasheninnikov, Arkady V. The Journal of Physical Chemistry Letters, Vol. 3, Issue 23, p. 3652-3656 https://doi.org/10.1021/jz301673x	journal	November 2012
Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing Kang, Jun; Tongay, Sefaattin; Li, Jingbo Journal of Applied Physics, Vol. 113, Issue 14, Article No. 143703 https://doi.org/10.1063/1.4799126	journal	April 2013
Properties of Individual Dopant Atoms in Single-Layer MoS ₂ : Atomic Structure, Migration, and Enhanced Reactivity Lin, Yung-Chang; Dumcenco, Dumitru O.; Komsa, Hannu-Pekka Advanced Materials, Vol. 26, Issue 18 https://doi.org/10.1002/adma.201304985	journal	February 2014
Possible doping strategies for MoS 2 monolayers: An ab initio study Dolui, Kapildeb; Rungger, Ivan; Das Pemmaraju, Chaitanya Physical Review B, Vol. 88, Issue 7 https://doi.org/10.1103/PhysRevB.88.075420	journal	August 2013
Doping against the Native Propensity of MoS ₂ : Degenerate Hole Doping by Cation Substitution Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh Nano Letters, Vol. 14, Issue 12 https://doi.org/10.1021/nl503251h	journal	November 2014
p-type doping of MoS ₂ thin films using Nb Laskar, Masihhur R.; Nath, Digbijoy N.; Ma, Lu Applied Physics Letters, Vol. 104, Issue 9 https://doi.org/10.1063/1.4867197	journal	March 2014
Nb-doped single crystalline MoS ₂ field effect transistor Das, Saptarshi; Demarteau, Marcellinus; Roelofs, Andreas Applied Physics Letters, Vol. 106, Issue 17 https://doi.org/10.1063/1.4919565	journal	April 2015
Manganese Doping of Monolayer MoS ₂ : The Substrate Is Critical Zhang, Kehao; Feng, Simin; Wang, Junjie Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02315	journal	September 2015
Influence of rhenium on the structural and optical properties of molybdenum disulfide Sigiro, Mula; Huang, Ying-Sheng; Ho, Ching-Hwa Japanese Journal of Applied Physics, Vol. 54, Issue 4S https://doi.org/10.7567/JJAP.54.04DH05	journal	February 2015
Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide Gong, Yongji; Liu, Zheng; Lupini, Andrew R. Nano Letters, Vol. 14, Issue 2 https://doi.org/10.1021/nl4032296	journal	December 2013
Metal-Semiconductor Phase-Transition in WSe _2(1- _x ₎ Te ₂ _x Monolayer Yu, Peng; Lin, Junhao; Sun, Linfeng Advanced Materials, Vol. 29, Issue 4 https://doi.org/10.1002/adma.201603991	journal	November 2016
Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe ₂ Zhou, Lin; Xu, Kai; Zubair, Ahmad Journal of the American Chemical Society, Vol. 137, Issue 37 https://doi.org/10.1021/jacs.5b07452	journal	September 2015
Monolayer Single-Crystal 1T′-MoTe ₂ Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect Naylor, Carl H.; Parkin, William M.; Ping, Jinglei Nano Letters, Vol. 16, Issue 7 https://doi.org/10.1021/acs.nanolett.6b01342	journal	June 2016
Anisotropic electronic, mechanical, and optical properties of monolayer WTe ₂ Torun, E.; Sahin, H.; Cahangirov, S. Journal of Applied Physics, Vol. 119, Issue 7 https://doi.org/10.1063/1.4942162	journal	February 2016
Signature of type-II Weyl semimetal phase in MoTe2 Jiang, J.; Liu, Z. K.; Sun, Y. Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms13973	journal	January 2017
Bandgap opening in few-layered monoclinic MoTe2 Keum, Dong Hoon; Cho, Suyeon; Kim, Jung Ho Nature Physics, Vol. 11, Issue 6 https://doi.org/10.1038/nphys3314	journal	May 2015
Room Temperature Semiconductor–Metal Transition of MoTe ₂ Thin Films Engineered by Strain Song, Seunghyun; Keum, Dong Hoon; Cho, Suyeon Nano Letters, Vol. 16, Issue 1 https://doi.org/10.1021/acs.nanolett.5b03481	journal	December 2015
Large, non-saturating magnetoresistance in WTe2 Ali, Mazhar N.; Xiong, Jun; Flynn, Steven Nature, Vol. 514, Issue 7521 https://doi.org/10.1038/nature13763	journal	September 2014
Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe ₂ Zhang, Enze; Chen, Rui; Huang, Ce Nano Letters, Vol. 17, Issue 2 https://doi.org/10.1021/acs.nanolett.6b04194	journal	January 2017
Quantum spin Hall state in monolayer 1T'-WTe2 Tang, Shujie; Zhang, Chaofan; Wong, Dillon Nature Physics, Vol. 13, Issue 7 https://doi.org/10.1038/nphys4174	journal	June 2017
Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy Sung, Ji Ho; Heo, Hoseok; Si, Saerom Nature Nanotechnology, Vol. 12, Issue 11 https://doi.org/10.1038/nnano.2017.161	journal	September 2017
Structural phase transition in monolayer MoTe2 driven by electrostatic doping Wang, Ying; Xiao, Jun; Zhu, Hanyu Nature, Vol. 550, Issue 7677 https://doi.org/10.1038/nature24043	journal	October 2017
Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe ₂ and W _x Mo _{1– x} Te ₂ Alloy Zhang, Chenxi; Kc, Santosh; Nie, Yifan ACS Nano, Vol. 10, Issue 8 https://doi.org/10.1021/acsnano.6b00148	journal	July 2016
Substrate dependent electronic structure variations of van der Waals heterostructures of MoSe ₂ or MoSe _{2(1− x )} Te _{2 x} grown by van der Waals epitaxy Diaz, Horacio Coy; Ma, Yujing; Kolekar, Sadhu 2D Materials, Vol. 4, Issue 2 https://doi.org/10.1088/2053-1583/aa6e6a	journal	May 2017
Anisotropic Ordering in 1T′ Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulfur and Selenium Lin, Junhao; Zhou, Jiadong; Zuluaga, Sebastian ACS Nano, Vol. 12, Issue 1 https://doi.org/10.1021/acsnano.7b08782	journal	January 2018
Interaction potential for aluminum nitride: A molecular dynamics study of mechanical and thermal properties of crystalline and amorphous aluminum nitride Vashishta, Priya; Kalia, Rajiv K.; Nakano, Aiichiro Journal of Applied Physics, Vol. 109, Issue 3 https://doi.org/10.1063/1.3525983	journal	February 2011
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2 Zhao, Weijie; Ghorannevis, Zohreh; Amara, Kiran Kumar Nanoscale, Vol. 5, Issue 20 https://doi.org/10.1039/c3nr03052k	journal	January 2013
Phonons in single-layer and few-layer MoS 2 and WS 2 Molina-Sánchez, A.; Wirtz, L. Physical Review B, Vol. 84, Issue 15 https://doi.org/10.1103/PhysRevB.84.155413	journal	October 2011
Intrinsic Phonon Bands in High-Quality Monolayer T ′ Molybdenum Ditelluride Chen, Shao-Yu; Naylor, Carl H.; Goldstein, Thomas ACS Nano, Vol. 11, Issue 1 https://doi.org/10.1021/acsnano.6b07260	journal	December 2016
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Fast Parallel Algorithms for Short-Range Molecular Dynamics Plimpton, Steve Journal of Computational Physics, Vol. 117, Issue 1 https://doi.org/10.1006/jcph.1995.1039	journal	March 1995

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