skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1489429
Grant/Contract Number:  
AR0000876
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 3 Journal Issue: 1; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., and Cahill, David G. Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.014601.
Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., & Cahill, David G. Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K. United States. doi:10.1103/PhysRevMaterials.3.014601.
Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., and Cahill, David G. Thu . "Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K". United States. doi:10.1103/PhysRevMaterials.3.014601.
@article{osti_1489429,
title = {Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K},
author = {Zheng, Qiye and Li, Chunhua and Rai, Akash and Leach, Jacob H. and Broido, David A. and Cahill, David G.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.3.014601},
journal = {Physical Review Materials},
number = 1,
volume = 3,
place = {United States},
year = {2019},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevMaterials.3.014601

Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Thermal diffusivity of isotopically enriched C 12 diamond
journal, July 1990


High temperature heat contents of III-V semiconductor systems
journal, June 1990


Intrinsic lattice thermal conductivity of semiconductors from first principles
journal, December 2007

  • Broido, D. A.; Malorny, M.; Birner, G.
  • Applied Physics Letters, Vol. 91, Issue 23
  • DOI: 10.1063/1.2822891

Thermal transport through GaN–SiC interfaces from 300 to 600 K
journal, August 2015

  • Ziade, Elbara; Yang, Jia; Brummer, Gordie
  • Applied Physics Letters, Vol. 107, Issue 9
  • DOI: 10.1063/1.4930104

Precise measurement of equation-of-state and elastic properties for GaN up to 16GPa
journal, March 2002


The 2018 GaN power electronics roadmap
journal, March 2018

  • Amano, H.; Baines, Y.; Beam, E.
  • Journal of Physics D: Applied Physics, Vol. 51, Issue 16
  • DOI: 10.1088/1361-6463/aaaf9d

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
journal, February 1998


Thermal conductivity of isotopically pure and Ge-doped Si epitaxial layers from 300 to 550 K
journal, December 2004


Analysis of heat flow in layered structures for time-domain thermoreflectance
journal, December 2004

  • Cahill, David G.
  • Review of Scientific Instruments, Vol. 75, Issue 12
  • DOI: 10.1063/1.1819431

Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode in n ‐type 4H– and 6H–SiC
journal, August 1995

  • Harima, Hiroshi; Nakashima, Shin‐ichi; Uemura, Tomoki
  • Journal of Applied Physics, Vol. 78, Issue 3
  • DOI: 10.1063/1.360174

Theoretical and Experimental Study of Raman Scattering from Coupled LO-Phonon-Plasmon Modes in Silicon Carbide
journal, September 1972

  • Klein, Miles V.; Ganguly, B. N.; Colwell, Priscilla J.
  • Physical Review B, Vol. 6, Issue 6
  • DOI: 10.1103/PhysRevB.6.2380

Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3 C , 4 H , 6 H , 1 5 R , and 2 1 R
journal, September 1968


Defects in Single Crystalline Ammonothermal Gallium Nitride
journal, March 2017

  • Suihkonen, Sami; Pimputkar, Siddha; Sintonen, Sakari
  • Advanced Electronic Materials, Vol. 3, Issue 6
  • DOI: 10.1002/aelm.201600496

Spectral concentration of thermal conductivity in GaN—A first-principles study
journal, June 2018

  • Garg, Jivtesh; Luo, Tengfei; Chen, Gang
  • Applied Physics Letters, Vol. 112, Issue 25
  • DOI: 10.1063/1.5026903

Uncertainty analysis of thermoreflectance measurements
journal, January 2016

  • Yang, Jia; Ziade, Elbara; Schmidt, Aaron J.
  • Review of Scientific Instruments, Vol. 87, Issue 1
  • DOI: 10.1063/1.4939671

High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
journal, September 2000

  • Florescu, D. I.; Asnin, V. M.; Pollak, Fred H.
  • Journal of Applied Physics, Vol. 88, Issue 6
  • DOI: 10.1063/1.1289072

High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process
journal, January 2007


Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
journal, January 1973


Phonon transport unveils the prevalent point defects in GaN
journal, May 2018


Two-tint pump-probe measurements using a femtosecond laser oscillator and sharp-edged optical filters
journal, November 2008

  • Kang, Kwangu; Koh, Yee Kan; Chiritescu, Catalin
  • Review of Scientific Instruments, Vol. 79, Issue 11
  • DOI: 10.1063/1.3020759

Limits to Fourier theory in high thermal conductivity single crystals
journal, November 2015

  • Wilson, R. B.; Cahill, David G.
  • Applied Physics Letters, Vol. 107, Issue 20
  • DOI: 10.1063/1.4935987

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
journal, January 1997

  • Rosner, S. J.; Carr, E. C.; Ludowise, M. J.
  • Applied Physics Letters, Vol. 70, Issue 4
  • DOI: 10.1063/1.118322

Thermal Conductivity and Phonon Resonance Scattering
journal, June 1962


Thermal Conductivity and Large Isotope Effect in GaN from First Principles
journal, August 2012


Polarized Raman spectra in GaN
journal, March 1995


Heat capacity and phonon mean free path of wurtzite GaN
journal, August 2006

  • Danilchenko, B. A.; Paszkiewicz, T.; Wolski, S.
  • Applied Physics Letters, Vol. 89, Issue 6
  • DOI: 10.1063/1.2335373

Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles
journal, June 2017


Theoretical aspects of the minority carrier recombination at dislocations in semiconductors
journal, December 1996


Thermal conductivity of lateral epitaxial overgrown GaN films
journal, December 1999

  • Luo, C. -Y.; Marchand, H.; Clarke, D. R.
  • Applied Physics Letters, Vol. 75, Issue 26
  • DOI: 10.1063/1.125566

The temperature dependence of the thermal conductivity of single crystal GaN films
journal, March 2001


Electrical Resistivity of Aluminum and Manganese
journal, October 1984

  • Desai, P. D.; James, H. M.; Ho, C. Y.
  • Journal of Physical and Chemical Reference Data, Vol. 13, Issue 4
  • DOI: 10.1063/1.555725

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
journal, October 2014


High temperature enthalpy and heat capacity of GaN
journal, May 2003


Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation
journal, November 2014

  • Simon, Roland B.; Anaya, Julian; Kuball, Martin
  • Applied Physics Letters, Vol. 105, Issue 20
  • DOI: 10.1063/1.4901967

Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy
journal, September 2016

  • Robins, L. H.; Horneber, E.; Sanford, N. A.
  • Journal of Applied Physics, Vol. 120, Issue 12
  • DOI: 10.1063/1.4963291

Thermal Expansion of the Hexagonal (6H) Polytype of Silicon Carbide
journal, December 1986


Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride
journal, March 2016

  • Wu, Xufei; Lee, Jonghoon; Varshney, Vikas
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep22504

Selected Electrical Resistivity Values for the Platinum Group of Metals Part I: Palladium and Platinum
journal, July 2015


Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids
journal, October 2017


Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
journal, June 2003

  • Chierchia, R.; Böttcher, T.; Heinke, H.
  • Journal of Applied Physics, Vol. 93, Issue 11
  • DOI: 10.1063/1.1571217

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
journal, January 2001

  • Kuball, M.
  • Surface and Interface Analysis, Vol. 31, Issue 10
  • DOI: 10.1002/sia.1134

Curvature and bow of bulk GaN substrates
journal, July 2016

  • Foronda, Humberto M.; Romanov, Alexey E.; Young, Erin C.
  • Journal of Applied Physics, Vol. 120, Issue 3
  • DOI: 10.1063/1.4959073

First-principle-based full-dispersion Monte Carlo simulation of the anisotropic phonon transport in the wurtzite GaN thin film
journal, April 2016

  • Wu, Ruikang; Hu, Run; Luo, Xiaobing
  • Journal of Applied Physics, Vol. 119, Issue 14
  • DOI: 10.1063/1.4945776

Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
journal, May 1964


Thermal conductivity of bulk and nanowire Mg 2 Si x Sn 1 x alloys from first principles
journal, November 2012


Phonon‐electron scattering in single crystal silicon carbide
journal, December 1993

  • Morelli, Donald T.; Heremans, Joseph P.; Beetz, Charles P.
  • Applied Physics Letters, Vol. 63, Issue 23
  • DOI: 10.1063/1.110229

Waveguide study and refractive indices of GaN:Mg epitaxial film
journal, January 1996

  • Zhang, H. Y.; Schurman, M.; Feng, Z. C.
  • Optics Letters, Vol. 21, Issue 19
  • DOI: 10.1364/OL.21.001529

Low energy electron beam induced damage on InGaN/GaN quantum well structure
journal, April 2011

  • Nykänen, H.; Mattila, P.; Suihkonen, S.
  • Journal of Applied Physics, Vol. 109, Issue 8
  • DOI: 10.1063/1.3574655

Isotopic and Other Types of Thermal Resistance in Germanium
journal, May 1958


Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
journal, September 2018


Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
journal, February 2018

  • Roccaforte, Fabrizio; Fiorenza, Patrick; Greco, Giuseppe
  • Microelectronic Engineering, Vol. 187-188
  • DOI: 10.1016/j.mee.2017.11.021

Elastic constants of GaN between 10 and 305 K
journal, June 2016

  • Adachi, K.; Ogi, H.; Nagakubo, A.
  • Journal of Applied Physics, Vol. 119, Issue 24
  • DOI: 10.1063/1.4955046

Structure and Heat Capacity of Wurtzite GaN from 113 to 1073 K
journal, February 1999


Origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy
journal, January 2016

  • Yamane, Keisuke; Matsubara, Tohoru; Yamamoto, Takeshi
  • Journal of Applied Physics, Vol. 119, Issue 4
  • DOI: 10.1063/1.4940914

Spatial characterization of doped SiC wafers by Raman spectroscopy
journal, December 1998

  • Burton, J. C.; Sun, L.; Pophristic, M.
  • Journal of Applied Physics, Vol. 84, Issue 11
  • DOI: 10.1063/1.368947

The intrinsic thermal conductivity of AIN
journal, January 1987

  • Slack, Glen A.; Tanzilli, R. A.; Pohl, R. O.
  • Journal of Physics and Chemistry of Solids, Vol. 48, Issue 7
  • DOI: 10.1016/0022-3697(87)90153-3

Heat capacity of crystalline GaN
journal, July 2007

  • Zięborak-Tomaszkiewicz, Iwona; Utzig, Ewa; Gierycz, P.
  • Journal of Thermal Analysis and Calorimetry, Vol. 91, Issue 1
  • DOI: 10.1007/s10973-006-8317-4

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
journal, March 2012


Heat capacity of α Ga N : Isotope effects
journal, August 2005


Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
journal, August 2000

  • Waltereit, P.; Brandt, O.; Trampert, A.
  • Nature, Vol. 406, Issue 6798
  • DOI: 10.1038/35022529

Anisotropic failure of Fourier theory in time-domain thermoreflectance experiments
journal, October 2014

  • Wilson, R. B.; Cahill, David G.
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms6075

Properties of GaN and related compounds studied by means of Raman scattering
journal, September 2002


“Nanoparticle-in-Alloy” Approach to Efficient Thermoelectrics: Silicides in SiGe
journal, February 2009

  • Mingo, N.; Hauser, D.; Kobayashi, N. P.
  • Nano Letters, Vol. 9, Issue 2
  • DOI: 10.1021/nl8031982

Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018


Accurate dependence of gallium nitride thermal conductivity on dislocation density
journal, August 2006

  • Mion, C.; Muth, J. F.; Preble, E. A.
  • Applied Physics Letters, Vol. 89, Issue 9
  • DOI: 10.1063/1.2335972

Anisotropic thermal conductivity of 4H and 6H silicon carbide measured using time-domain thermoreflectance
journal, December 2017


Bulk GaN crystals grown by HVPE
journal, May 2009


Neutral and charged embedded clusters of Mn in doped GaN from first principles
journal, July 2007


Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
journal, September 2018

  • Rounds, Robert; Sarkar, Biplab; Sochacki, Tomasz
  • Journal of Applied Physics, Vol. 124, Issue 10
  • DOI: 10.1063/1.5047531

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

  • Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 2
  • DOI: 10.1109/TED.2014.2360861

Temperature dependence of the thermal expansion of GaN
journal, August 2005


Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives
journal, September 2018

  • Zajac, M.; Kucharski, R.; Grabianska, K.
  • Progress in Crystal Growth and Characterization of Materials, Vol. 64, Issue 3
  • DOI: 10.1016/j.pcrysgrow.2018.05.001

Size dictated thermal conductivity of GaN
journal, September 2016

  • Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.
  • Journal of Applied Physics, Vol. 120, Issue 9
  • DOI: 10.1063/1.4962010

Thermal conductivity of germanium crystals with different isotopic compositions
journal, October 1997


Thermal conductivity of diamond between 170 and 1200 K and the isotope effect
journal, June 1993


Specific heat of aluminum from zero to its melting temperature and beyond. Equation for representation of the specific heat of solids
journal, October 1970

  • Buyco, Edgar H.; Davis, Fred E.
  • Journal of Chemical & Engineering Data, Vol. 15, Issue 4
  • DOI: 10.1021/je60047a035

Increased thermal conductivity of free-standing low-dislocation-density GaN films
journal, September 2005

  • Liu, Weili; Balandin, Alexander A.; Lee, Changho
  • physica status solidi (a), Vol. 202, Issue 12
  • DOI: 10.1002/pssa.200521222

Thermal conductivity and electrical properties of 6 H silicon carbide
journal, September 1979

  • Burgemeister, E. A.; von Muench, W.; Pettenpaul, E.
  • Journal of Applied Physics, Vol. 50, Issue 9
  • DOI: 10.1063/1.326720

Raman spectroscopic study of the electrical properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport method
journal, May 2010

  • Peng, Yan; Xu, Xiangang; Hu, Xiaobo
  • Journal of Applied Physics, Vol. 107, Issue 9
  • DOI: 10.1063/1.3415534

4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth
journal, August 2016


Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN
journal, October 1995

  • Perlin, P.; Camassel, J.; Knap, W.
  • Applied Physics Letters, Vol. 67, Issue 17
  • DOI: 10.1063/1.114446

Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding
journal, June 2008

  • Pezzagna, S.; Brault, J.; Leroux, M.
  • Journal of Applied Physics, Vol. 103, Issue 12
  • DOI: 10.1063/1.2947598

Emerging challenges and materials for thermal management of electronics
journal, May 2014


Ab initio theory of the lattice thermal conductivity in diamond
journal, September 2009


Crystal structure refinement of AlN and GaN
journal, September 1977


Raman Frequencies and Angular Dispersion of Polar Modes in Aluminum Nitride and Gallium Nitride
journal, December 1996

  • Filippidis, L.; Siegle, H.; Hoffmann, A.
  • physica status solidi (b), Vol. 198, Issue 2
  • DOI: 10.1002/pssb.2221980207

High thermal conductivity in cubic boron arsenide crystals
journal, July 2018


Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K)
journal, January 1997

  • Nilsson, Ove; Mehling, Harald; Horn, Ronny
  • High Temperatures-High Pressures, Vol. 29, Issue 1
  • DOI: 10.1068/htec142

Pseudopotentials for high-throughput DFT calculations
journal, January 2014


Scaling Analysis of Performance Tradeoffs in Electronics Cooling
journal, December 2009

  • Green, C. E.; Fedorov, A. G.; Joshi, Y. K.
  • IEEE Transactions on Components and Packaging Technologies, Vol. 32, Issue 4
  • DOI: 10.1109/TCAPT.2009.2013720

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds
journal, August 2016


Phonon Scattering in Semiconductors From Thermal Conductivity Studies
journal, April 1964


Thermal expansion of the hexagonal (4 H ) polytype of SiC
journal, July 1986

  • Li, Z.; Bradt, R. C.
  • Journal of Applied Physics, Vol. 60, Issue 2
  • DOI: 10.1063/1.337456

Thermal conductivity of 4H-SiC single crystals
journal, February 2013

  • Wei, Rusheng; Song, Sheng; Yang, Kun
  • Journal of Applied Physics, Vol. 113, Issue 5
  • DOI: 10.1063/1.4790134

Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy
journal, October 1983

  • Irmer, G.; Toporov, V. V.; Bairamov, B. H.
  • physica status solidi (b), Vol. 119, Issue 2
  • DOI: 10.1002/pssb.2221190219

Ultrahigh thermal conductivity of isotopically enriched silicon
journal, March 2018

  • Inyushkin, Alexander V.; Taldenkov, Alexander N.; Ager, Joel W.
  • Journal of Applied Physics, Vol. 123, Issue 9
  • DOI: 10.1063/1.5017778

Thermal conductivity of GaN crystals in 4.2–300 K range
journal, October 2003


Electronic properties in p -type GaN studied by Raman scattering
journal, October 1998

  • Harima, H.; Inoue, T.; Nakashima, S.
  • Applied Physics Letters, Vol. 73, Issue 14
  • DOI: 10.1063/1.122348

Exceptionally Strong Phonon Scattering by B Substitution in Cubic SiC
journal, August 2017


X-ray diffraction of III-nitrides
journal, February 2009


Bowing of thick GaN layers grown by HVPE using ELOG
journal, June 2006


X-ray diffraction analysis of the defect structure in epitaxial GaN
journal, October 2000

  • Heinke, H.; Kirchner, V.; Einfeldt, S.
  • Applied Physics Letters, Vol. 77, Issue 14
  • DOI: 10.1063/1.1314877

Thermal conductivity of heavily doped bulk crystals GaN:O. Free carriers contribution
journal, August 2015


Raman Scattering in 6 H SiC
journal, June 1968


Free Carrier Concentration Gradient along the c -Axis of a Freestanding Si-doped GaN Single Crystal
journal, February 2005

  • Yoon, M.; Park, Il-Woo; Choi, H.
  • Japanese Journal of Applied Physics, Vol. 44, Issue 2
  • DOI: 10.1143/JJAP.44.828

Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
journal, December 1964

  • Slack, Glen A.
  • Journal of Applied Physics, Vol. 35, Issue 12
  • DOI: 10.1063/1.1713251

Macroscopic polarization and band offsets at nitride heterojunctions
journal, April 1998


Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride
journal, January 1994

  • Kozawa, T.; Kachi, T.; Kano, H.
  • Journal of Applied Physics, Vol. 75, Issue 2
  • DOI: 10.1063/1.356492

The Ammonothermal Crystal Growth of Gallium Nitride—A Technique on the Up Rise
journal, July 2010


Some effects of oxygen impurities on AlN and GaN
journal, December 2002

  • Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald
  • Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298
  • DOI: 10.1016/S0022-0248(02)01753-0

Heat Capacity of 4H-SiC Determined by Differential Scanning Calorimetry
journal, January 2000

  • Hitova, L.; Yakimova, R.; Trifonova, E. P.
  • Journal of The Electrochemical Society, Vol. 147, Issue 9
  • DOI: 10.1149/1.1393935

Phonon dispersion and Raman scattering in hexagonal GaN and AlN
journal, November 1998


Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography
journal, August 2014

  • Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri
  • Applied Physics Express, Vol. 7, Issue 9
  • DOI: 10.7567/APEX.7.091003

Refinement of thermodynamic data on GaN
journal, December 2007

  • Jacob, K. T.; Singh, Shwetank; Waseda, Y.
  • Journal of Materials Research, Vol. 22, Issue 12
  • DOI: 10.1557/JMR.2007.0441

Impact of active thermal management on power electronics design
journal, September 2014


Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment
journal, September 2017

  • Paskov, P. P.; Slomski, M.; Leach, J. H.
  • AIP Advances, Vol. 7, Issue 9
  • DOI: 10.1063/1.4989626

High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope
journal, August 1999

  • Asnin, V. M.; Pollak, Fred H.; Ramer, J.
  • Applied Physics Letters, Vol. 75, Issue 9
  • DOI: 10.1063/1.124654

On the isotope effect in thermal conductivity of silicon
journal, November 2004

  • Inyushkin, A. V.; Taldenkov, A. N.; Gibin, A. M.
  • physica status solidi (c), Vol. 1, Issue 11
  • DOI: 10.1002/pssc.200405341