skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on January 3, 2020

Title: Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
AR0000876
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 3 Journal Issue: 1; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1489429

Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., and Cahill, David G.. Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K. United States: N. p., Web. doi:10.1103/PhysRevMaterials.3.014601.
Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., & Cahill, David G.. Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K. United States. doi:10.1103/PhysRevMaterials.3.014601.
Zheng, Qiye, Li, Chunhua, Rai, Akash, Leach, Jacob H., Broido, David A., and Cahill, David G.. 2019. "Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K". United States. doi:10.1103/PhysRevMaterials.3.014601.
@article{osti_1489429,
title = {Thermal conductivity of GaN, GaN 71 , and SiC from 150 K to 850 K},
author = {Zheng, Qiye and Li, Chunhua and Rai, Akash and Leach, Jacob H. and Broido, David A. and Cahill, David G.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.3.014601},
journal = {Physical Review Materials},
number = 1,
volume = 3,
place = {United States},
year = {2019},
month = {1}
}

Works referenced in this record:

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009
  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

The Ammonothermal Crystal Growth of Gallium Nitride�A Technique on the Up Rise
journal, July 2010

Some effects of oxygen impurities on AlN and GaN
journal, December 2002
  • Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald
  • Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298
  • DOI: 10.1016/S0022-0248(02)01753-0