Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1489425
- Grant/Contract Number:
- AC02-05-CH11231
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Name: Physical Review Letters Journal Volume: 122 Journal Issue: 1; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Chittari, Bheema Lingam, Chen, Guorui, Zhang, Yuanbo, Wang, Feng, and Jung, Jeil. Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices. United States: N. p., 2019.
Web. doi:10.1103/PhysRevLett.122.016401.
Chittari, Bheema Lingam, Chen, Guorui, Zhang, Yuanbo, Wang, Feng, & Jung, Jeil. Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices. United States. https://doi.org/10.1103/PhysRevLett.122.016401
Chittari, Bheema Lingam, Chen, Guorui, Zhang, Yuanbo, Wang, Feng, and Jung, Jeil. Thu .
"Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices". United States. https://doi.org/10.1103/PhysRevLett.122.016401.
@article{osti_1489425,
title = {Gate-Tunable Topological Flat Bands in Trilayer Graphene Boron-Nitride Moiré Superlattices},
author = {Chittari, Bheema Lingam and Chen, Guorui and Zhang, Yuanbo and Wang, Feng and Jung, Jeil},
abstractNote = {},
doi = {10.1103/PhysRevLett.122.016401},
journal = {Physical Review Letters},
number = 1,
volume = 122,
place = {United States},
year = {2019},
month = {1}
}
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https://doi.org/10.1103/PhysRevLett.122.016401
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