Super-diffusion of excited carriers in semiconductors
Abstract
The ultrafast spatial and temporal dynamics of excited carriers are important to understanding the response of materials to laser pulses. Here we use scanning ultrafast electron microscopy to image the dynamics of electrons and holes in silicon after excitation with a short laser pulse. We find that the carriers exhibit a diffusive dynamics at times shorter than 200 ps, with a transient diffusivity up to 1,000 times higher than the room temperature value, D0≈30 cm2s–1. The diffusivity then decreases rapidly, reaching a value of D0 roughly 500 ps after the excitation pulse. We attribute the transient super-diffusive behaviour to the rapid expansion of the excited carrier gas, which equilibrates with the environment in 100–150 ps. Numerical solution of the diffusion equation, as well as ab initio calculations, support our interpretation. Lastly, our findings provide new insight into the ultrafast spatial dynamics of excited carriers in materials.
- Authors:
-
- California Inst. of Technology (CalTech), Pasadena, CA (United States). Physical Biology Center for Ultrafast Science and Technology, Arthur Noyes Lab. of Chemical Physics
- California Inst. of Technology (CalTech), Pasadena, CA (United States). Dept. of Applied Physics and Materials Science and Dept. of Physics
- California Inst. of Technology (CalTech), Pasadena, CA (United States). Dept. of Applied Physics and Materials Science
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1489371
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 8; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Najafi, Ebrahim, Ivanov, Vsevolod, Zewail, Ahmed, and Bernardi, Marco. Super-diffusion of excited carriers in semiconductors. United States: N. p., 2017.
Web. doi:10.1038/ncomms15177.
Najafi, Ebrahim, Ivanov, Vsevolod, Zewail, Ahmed, & Bernardi, Marco. Super-diffusion of excited carriers in semiconductors. United States. https://doi.org/10.1038/ncomms15177
Najafi, Ebrahim, Ivanov, Vsevolod, Zewail, Ahmed, and Bernardi, Marco. Thu .
"Super-diffusion of excited carriers in semiconductors". United States. https://doi.org/10.1038/ncomms15177. https://www.osti.gov/servlets/purl/1489371.
@article{osti_1489371,
title = {Super-diffusion of excited carriers in semiconductors},
author = {Najafi, Ebrahim and Ivanov, Vsevolod and Zewail, Ahmed and Bernardi, Marco},
abstractNote = {The ultrafast spatial and temporal dynamics of excited carriers are important to understanding the response of materials to laser pulses. Here we use scanning ultrafast electron microscopy to image the dynamics of electrons and holes in silicon after excitation with a short laser pulse. We find that the carriers exhibit a diffusive dynamics at times shorter than 200 ps, with a transient diffusivity up to 1,000 times higher than the room temperature value, D0≈30 cm2s–1. The diffusivity then decreases rapidly, reaching a value of D0 roughly 500 ps after the excitation pulse. We attribute the transient super-diffusive behaviour to the rapid expansion of the excited carrier gas, which equilibrates with the environment in 100–150 ps. Numerical solution of the diffusion equation, as well as ab initio calculations, support our interpretation. Lastly, our findings provide new insight into the ultrafast spatial dynamics of excited carriers in materials.},
doi = {10.1038/ncomms15177},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {Thu May 11 00:00:00 EDT 2017},
month = {Thu May 11 00:00:00 EDT 2017}
}
Web of Science
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