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Title: Voltage-Induced Charge Redistribution in Cu(In,Ga)Se 2 Devices Studied With High-Speed Capacitance–Voltage Profiling

Abstract

Devices made from Cu(In, Ga)Se 2 (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. In conclusion, the large deep defect levels are high enough to limit minority carrier lifetime and cell efficiency.

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2];  [3]
  1. MiaSole Hi-Tech Corp., Santa Clara, CA (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Delaware, Newark, DE (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1489187
Report Number(s):
NREL/JA-5K00-73004
Journal ID: ISSN 2156-3381
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CuInxGa1-xSe2 (CIGS); capacitance methods; solar cells

Citation Formats

Bailey, Jeff, Poplavskyy, Dmitry, Zapalac, Geordie, Mansfield, Lorelle M., and Shafarman, William. Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling. United States: N. p., 2018. Web. doi:10.1109/JPHOTOV.2018.2882204.
Bailey, Jeff, Poplavskyy, Dmitry, Zapalac, Geordie, Mansfield, Lorelle M., & Shafarman, William. Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling. United States. doi:10.1109/JPHOTOV.2018.2882204.
Bailey, Jeff, Poplavskyy, Dmitry, Zapalac, Geordie, Mansfield, Lorelle M., and Shafarman, William. Mon . "Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling". United States. doi:10.1109/JPHOTOV.2018.2882204. https://www.osti.gov/servlets/purl/1489187.
@article{osti_1489187,
title = {Voltage-Induced Charge Redistribution in Cu(In,Ga)Se2 Devices Studied With High-Speed Capacitance–Voltage Profiling},
author = {Bailey, Jeff and Poplavskyy, Dmitry and Zapalac, Geordie and Mansfield, Lorelle M. and Shafarman, William},
abstractNote = {Devices made from Cu(In, Ga)Se2 (CIGS) solar cell material have been evaluated with high-speed capacitance-voltage profiling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. In conclusion, the large deep defect levels are high enough to limit minority carrier lifetime and cell efficiency.},
doi = {10.1109/JPHOTOV.2018.2882204},
journal = {IEEE Journal of Photovoltaics},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {12}
}

Journal Article:
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