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Title: Compensation and hydrogen passivation of magnesium acceptors in β-Ga 2O 3

Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga 2O 3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga 2O 3:Mg shows an IR peak at 3492 cm –1, assigned to an O-H bond-stretching mode of a neutral MgH complex. As a result, despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (10 19 cm –3) can push the Fermi level to mid-gap or lower.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ; ORCiD logo [1] ; ORCiD logo [1]
  1. Washington State Univ., Pullman, WA (United States)
  2. Washington State Univ., Pullman, WA (United States); Univ. of Idaho, Moscow, ID (United States)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Grant/Contract Number:
FG02-07ER46386
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Washington State Univ., Pullman, WA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS
OSTI Identifier:
1489147
Alternate Identifier(s):
OSTI ID: 1462153

Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., and McCluskey, Matthew D.. Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3. United States: N. p., Web. doi:10.1063/1.5044627.
Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., & McCluskey, Matthew D.. Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3. United States. doi:10.1063/1.5044627.
Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., and McCluskey, Matthew D.. 2018. "Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3". United States. doi:10.1063/1.5044627.
@article{osti_1489147,
title = {Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3},
author = {Ritter, Jacob R. and Huso, Jesse and Dickens, Peter T. and Varley, Joel B. and Lynn, Kelvin G. and McCluskey, Matthew D.},
abstractNote = {Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm–1, assigned to an O-H bond-stretching mode of a neutral MgH complex. As a result, despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (1019 cm–3) can push the Fermi level to mid-gap or lower.},
doi = {10.1063/1.5044627},
journal = {Applied Physics Letters},
number = 5,
volume = 113,
place = {United States},
year = {2018},
month = {7}
}

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