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Title: Compensation and hydrogen passivation of magnesium acceptors in β-Ga 2O 3

Abstract

Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga 2O 3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga 2O 3:Mg shows an IR peak at 3492 cm –1, assigned to an O-H bond-stretching mode of a neutral MgH complex. As a result, despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (10 19 cm –3) can push the Fermi level to mid-gap or lower.

Authors:
 [1];  [2];  [1];  [3]; ORCiD logo [1]; ORCiD logo [1]
  1. Washington State Univ., Pullman, WA (United States)
  2. Washington State Univ., Pullman, WA (United States); Univ. of Idaho, Moscow, ID (United States)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1489147
Alternate Identifier(s):
OSTI ID: 1462153; OSTI ID: 1497959
Report Number(s):
LLNL-JRNL-758201
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
FG02-07ER46386; AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., and McCluskey, Matthew D. Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3. United States: N. p., 2018. Web. doi:10.1063/1.5044627.
Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., & McCluskey, Matthew D. Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3. United States. doi:10.1063/1.5044627.
Ritter, Jacob R., Huso, Jesse, Dickens, Peter T., Varley, Joel B., Lynn, Kelvin G., and McCluskey, Matthew D. Mon . "Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3". United States. doi:10.1063/1.5044627. https://www.osti.gov/servlets/purl/1489147.
@article{osti_1489147,
title = {Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3},
author = {Ritter, Jacob R. and Huso, Jesse and Dickens, Peter T. and Varley, Joel B. and Lynn, Kelvin G. and McCluskey, Matthew D.},
abstractNote = {Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm–1, assigned to an O-H bond-stretching mode of a neutral MgH complex. As a result, despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (1019 cm–3) can push the Fermi level to mid-gap or lower.},
doi = {10.1063/1.5044627},
journal = {Applied Physics Letters},
number = 5,
volume = 113,
place = {United States},
year = {2018},
month = {7}
}

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