Design of Atomically Precise Nanoscale Negative Differential Resistance Devices
Abstract
Abstract Downscaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with atomic‐scale components. Here, negative differential resistance (NDR) devices based on atomically precise graphene nanoribbons are investigated. The computational evaluation of the traditional double‐barrier resonant‐tunneling diode NDR structure uncovers important issues at the atomic scale, concerning the need to minimize the tunneling current between the leads while achieving high peak current. A new device structure consisting of multiple short segments that enables high current by the alignment of electronic levels across the segments while enlarging the tunneling distance between the leads is proposed. The proposed structure can be built with atomic precision using a scanning tunneling microscope (STM) tip during an intermediate stage in the synthesis of an armchair nanoribbon. An experimental evaluation of the band alignment at the interfaces and an STM image of the fabricated active part of the device are also presented. This combined theoretical–experimental approach opens a new avenue for the design of nanoscale devices with atomic precision.
- Authors:
-
[2];
[2];
[2];
[2];
[2];
[2];
[3]
- North Carolina State Univ., Raleigh, NC (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- North Carolina State Univ., Raleigh, NC (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1489088
- Alternate Identifier(s):
- OSTI ID: 1488621
- Grant/Contract Number:
- AC05-00OR22725; DE‐FG02‐98ER45685
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Theory and Simulations
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 2; Journal ID: ISSN 2513-0390
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; atomically precise devices; band alignment engineering; graphene nanoribbons; negative differential resistance
Citation Formats
Xiao, Zhongcan, Ma, Chuanxu, Huang, Jingsong, Liang, Liangbo, Lu, Wenchang, Hong, Kunlun, Sumpter, Bobby G., Li, An -Ping, and Bernholc, Jerzy. Design of Atomically Precise Nanoscale Negative Differential Resistance Devices. United States: N. p., 2018.
Web. doi:10.1002/adts.201800172.
Xiao, Zhongcan, Ma, Chuanxu, Huang, Jingsong, Liang, Liangbo, Lu, Wenchang, Hong, Kunlun, Sumpter, Bobby G., Li, An -Ping, & Bernholc, Jerzy. Design of Atomically Precise Nanoscale Negative Differential Resistance Devices. United States. https://doi.org/10.1002/adts.201800172
Xiao, Zhongcan, Ma, Chuanxu, Huang, Jingsong, Liang, Liangbo, Lu, Wenchang, Hong, Kunlun, Sumpter, Bobby G., Li, An -Ping, and Bernholc, Jerzy. Thu .
"Design of Atomically Precise Nanoscale Negative Differential Resistance Devices". United States. https://doi.org/10.1002/adts.201800172. https://www.osti.gov/servlets/purl/1489088.
@article{osti_1489088,
title = {Design of Atomically Precise Nanoscale Negative Differential Resistance Devices},
author = {Xiao, Zhongcan and Ma, Chuanxu and Huang, Jingsong and Liang, Liangbo and Lu, Wenchang and Hong, Kunlun and Sumpter, Bobby G. and Li, An -Ping and Bernholc, Jerzy},
abstractNote = {Abstract Downscaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with atomic‐scale components. Here, negative differential resistance (NDR) devices based on atomically precise graphene nanoribbons are investigated. The computational evaluation of the traditional double‐barrier resonant‐tunneling diode NDR structure uncovers important issues at the atomic scale, concerning the need to minimize the tunneling current between the leads while achieving high peak current. A new device structure consisting of multiple short segments that enables high current by the alignment of electronic levels across the segments while enlarging the tunneling distance between the leads is proposed. The proposed structure can be built with atomic precision using a scanning tunneling microscope (STM) tip during an intermediate stage in the synthesis of an armchair nanoribbon. An experimental evaluation of the band alignment at the interfaces and an STM image of the fabricated active part of the device are also presented. This combined theoretical–experimental approach opens a new avenue for the design of nanoscale devices with atomic precision.},
doi = {10.1002/adts.201800172},
journal = {Advanced Theory and Simulations},
number = 2,
volume = 2,
place = {United States},
year = {Thu Dec 20 00:00:00 EST 2018},
month = {Thu Dec 20 00:00:00 EST 2018}
}
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