Stacking-Dependent Magnetism in Bilayer CrI3

Sivadas, Nikhil; Okamoto, Satoshi; Xu, Xiaodong; Fennie, Craig. J.; Xiao, Di

doi:10.1021/acs.nanolett.8b03321

Title: Stacking-Dependent Magnetism in Bilayer CrI₃

Journal Article · 07 November 2018 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.8b03321 · OSTI ID:1488712

^[1];

^[2]; Xu, Xiaodong ^[3]; Fennie, Craig. J. ^[1]; Xiao, Di ^[4]

Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Univ. of Washington, Seattle, WA (United States). Dept. of Physics, and Dept. of Materials Science and Engineering
Carnegie Mellon Univ., Pittsburgh, PA (United States). Dept. of Physics

Here we report the connection between the stacking order and magnetic properties of bilayer CrI₃ using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order, one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI₃ but also have direct implications in heterostructures made of two-dimensional magnets.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Programmable Quantum Materials (Pro-QM); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1488712

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 12 Vol. 18; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Stacking-Dependent Magnetism in Bilayer CrI₃