skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates

Abstract

Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [4]; ORCiD logo [5]; ORCiD logo [5]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. The Pennsylvania State Univ., University Park, PA (United States)
  2. The Pennsylvania State Univ., University Park, PA (United States); Univ. Politecnica de Madrid, Madrid (Spain)
  3. Materials Characterization Lab., University Park, PA (United States)
  4. KYMA Technologies, Raleigh, NC (United States)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1488693
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 29; Journal Issue: 47; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 2D materials; nitrides; gallium selenide; ammonolysis; epitaxy

Citation Formats

Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, and Robinson, Joshua A. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. United States: N. p., 2018. Web. doi:10.1088/1361-6528/aae0bb.
Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, & Robinson, Joshua A. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. United States. doi:10.1088/1361-6528/aae0bb.
Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, and Robinson, Joshua A. Fri . "Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates". United States. doi:10.1088/1361-6528/aae0bb. https://www.osti.gov/servlets/purl/1488693.
@article{osti_1488693,
title = {Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates},
author = {Briggs, Natalie and Preciado, Maria Isolina and Lu, Yanfu and Wang, Ke and Leach, Jacob and Li, Xufan and Xiao, Kai and Subramanian, Shruti and Wang, Baoming and Haque, Aman and Sinnott, Susan and Robinson, Joshua A.},
abstractNote = {Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.},
doi = {10.1088/1361-6528/aae0bb},
journal = {Nanotechnology},
number = 47,
volume = 29,
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
journal, March 2014

  • Ross, Jason S.; Klement, Philip; Jones, Aaron M.
  • Nature Nanotechnology, Vol. 9, Issue 4
  • DOI: 10.1038/nnano.2014.26

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016

  • Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.
  • Nature Nanotechnology, Vol. 12, Issue 3
  • DOI: 10.1038/nnano.2016.242

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
journal, June 2012

  • Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng
  • ACS Nano, Vol. 6, Issue 7
  • DOI: 10.1021/nn300889c

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
journal, June 2014

  • Li, Xufan; Lin, Ming-Wei; Puretzky, Alexander A.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05497

Synthesis and Photoresponse of Large GaSe Atomic Layers
journal, May 2013

  • Lei, Sidong; Ge, Liehui; Liu, Zheng
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4010089

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
journal, May 2015

  • Mudd, Garry W.; Svatek, Simon A.; Hague, Lee
  • Advanced Materials, Vol. 27, Issue 25
  • DOI: 10.1002/adma.201500889

Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide
journal, September 2015


Growth and applications of Group III-nitrides
journal, October 1998


III–Nitride UV Devices
journal, October 2005

  • Asif Khan, M.; Shatalov, M.; Maruska, H. P.
  • Japanese Journal of Applied Physics, Vol. 44, Issue 10
  • DOI: 10.1143/JJAP.44.7191

Two-dimensional gallium nitride realized via graphene encapsulation
journal, August 2016

  • Al Balushi, Zakaria Y.; Wang, Ke; Ghosh, Ram Krishna
  • Nature Materials, Vol. 15, Issue 11
  • DOI: 10.1038/nmat4742

Template Approach to Crystalline GaN Nanosheets
journal, April 2017


Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides: Few-layer Nanosheets of GaN and Other Metal Nitrides
journal, October 2014

  • Sreedhara, M. B.; Vasu, K.; Rao, C. N. R.
  • Zeitschrift für anorganische und allgemeine Chemie, Vol. 640, Issue 14
  • DOI: 10.1002/zaac.201400386

GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls
journal, January 2005

  • Gautam, Ujjal K.; Vivekchand, S. R. C.; Govindaraj, A.
  • Chemical Communications, Issue 31
  • DOI: 10.1039/B506676J

Projector augmented-wave method
journal, December 1994


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Crystal structure and interatomic distances in GaSe
journal, October 1975


Lattice parameters of gallium nitride
journal, July 1996

  • Leszczynski, M.; Teisseyre, H.; Suski, T.
  • Applied Physics Letters, Vol. 69, Issue 1
  • DOI: 10.1063/1.118123

An XPS study of GaN thin films on GaAs
journal, July 1990

  • Carin, R.; Deville, J. P.; Werckmann, J.
  • Surface and Interface Analysis, Vol. 16, Issue 1-12
  • DOI: 10.1002/sia.740160116

Gallium Nitride Studied by Electron Spectroscopy
journal, January 1980


GaN Substrates for III-Nitride Devices
journal, July 2010


Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
journal, February 2016


Uniform growth of GaN on AlN templated (111)Si substrate by HVPE
journal, May 2005


Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
journal, July 1997

  • Usui, Akira; Sunakawa, Haruo; Sakai, Akira
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 7B
  • DOI: 10.1143/JJAP.36.L899

Remote epitaxy through graphene enables two-dimensional material-based layer transfer
journal, April 2017

  • Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang
  • Nature, Vol. 544, Issue 7650
  • DOI: 10.1038/nature22053

    Works referencing / citing this record:

    Two-dimensional amorphous nanomaterials: synthesis and applications
    journal, May 2019


    Two-dimensional amorphous nanomaterials: synthesis and applications
    journal, May 2019


    Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
    journal, December 2019

    • Cai, Hui; Gu, Yiyi; Lin, Yu-Chuan
    • Applied Physics Reviews, Vol. 6, Issue 4
    • DOI: 10.1063/1.5123487