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Title: Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates

Abstract

Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [4]; ORCiD logo [5]; ORCiD logo [5]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. The Pennsylvania State Univ., University Park, PA (United States)
  2. The Pennsylvania State Univ., University Park, PA (United States); Univ. Politecnica de Madrid, Madrid (Spain)
  3. Materials Characterization Lab., University Park, PA (United States)
  4. KYMA Technologies, Raleigh, NC (United States)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1488693
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 29; Journal Issue: 47; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 2D materials; nitrides; gallium selenide; ammonolysis; epitaxy

Citation Formats

Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, and Robinson, Joshua A. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. United States: N. p., 2018. Web. doi:10.1088/1361-6528/aae0bb.
Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, & Robinson, Joshua A. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates. United States. doi:10.1088/1361-6528/aae0bb.
Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, and Robinson, Joshua A. Fri . "Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates". United States. doi:10.1088/1361-6528/aae0bb. https://www.osti.gov/servlets/purl/1488693.
@article{osti_1488693,
title = {Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates},
author = {Briggs, Natalie and Preciado, Maria Isolina and Lu, Yanfu and Wang, Ke and Leach, Jacob and Li, Xufan and Xiao, Kai and Subramanian, Shruti and Wang, Baoming and Haque, Aman and Sinnott, Susan and Robinson, Joshua A.},
abstractNote = {Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.},
doi = {10.1088/1361-6528/aae0bb},
journal = {Nanotechnology},
number = 47,
volume = 29,
place = {United States},
year = {2018},
month = {9}
}

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Works referenced in this record:

Projector augmented-wave method
journal, December 1994


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865