Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates

Briggs, Natalie; Preciado, Maria Isolina; Lu, Yanfu; Wang, Ke; Leach, Jacob; Li, Xufan; Xiao, Kai; Subramanian, Shruti; Wang, Baoming; Haque, Aman; Sinnott, Susan; Robinson, Joshua A.

doi:10.1088/1361-6528/aae0bb

Title: Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates

Abstract

Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

Authors:

^[1]; Preciado, Maria Isolina ^[2]; Lu, Yanfu ^[1]; Wang, Ke ^[3]; Leach, Jacob ^[4];

^[5];

^[1];

^[1]

The Pennsylvania State Univ., University Park, PA (United States)
The Pennsylvania State Univ., University Park, PA (United States); Univ. Politecnica de Madrid, Madrid (Spain)
Materials Characterization Lab., University Park, PA (United States)
KYMA Technologies, Raleigh, NC (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Fri Sep 28 00:00:00 EDT 2018

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1488693

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Nanotechnology

Additional Journal Information:: Journal Volume: 29; Journal Issue: 47; Journal ID: ISSN 0957-4484

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 2D materials; nitrides; gallium selenide; ammonolysis; epitaxy

Citation Formats


                    Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, and Robinson, Joshua A. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates.  United States: N. p., 2018. 
Web.  doi:10.1088/1361-6528/aae0bb.

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                    Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, & Robinson, Joshua A. Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates.  United States.  https://doi.org/10.1088/1361-6528/aae0bb

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                    Briggs, Natalie, Preciado, Maria Isolina, Lu, Yanfu, Wang, Ke, Leach, Jacob, Li, Xufan, Xiao, Kai, Subramanian, Shruti, Wang, Baoming, Haque, Aman, Sinnott, Susan, and Robinson, Joshua A. Fri .  
"Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates".  United States.  https://doi.org/10.1088/1361-6528/aae0bb.  https://www.osti.gov/servlets/purl/1488693.

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@article{osti_1488693,

  title        = {Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates},

  author       = {Briggs, Natalie and Preciado, Maria Isolina and Lu, Yanfu and Wang, Ke and Leach, Jacob and Li, Xufan and Xiao, Kai and Subramanian, Shruti and Wang, Baoming and Haque, Aman and Sinnott, Susan and Robinson, Joshua A.},

  abstractNote = {Here, the experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.},

  doi          = {10.1088/1361-6528/aae0bb},

  journal      = {Nanotechnology},

  number       = 47,

  volume       = 29,

  place        = {United States},

  year         = {Fri Sep 28 00:00:00 EDT 2018},

  month        = {Fri Sep 28 00:00:00 EDT 2018}

}

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Title: Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates

Abstract

Citation Formats

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions journal, March 2014

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe journal, November 2016

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors journal, June 2012

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse journal, June 2014

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High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures journal, May 2015

Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide journal, September 2015

Growth and applications of Group III-nitrides journal, October 1998

III–Nitride UV Devices journal, October 2005

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GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls journal, January 2005

Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation journal, September 2010

Projector augmented-wave method journal, December 1994

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Generalized Gradient Approximation Made Simple journal, October 1996

Crystal structure and interatomic distances in GaSe journal, October 1975

Lattice parameters of gallium nitride journal, July 1996

An XPS study of GaN thin films on GaAs journal, July 1990

Gallium Nitride Studied by Electron Spectroscopy journal, January 1980

GaN Substrates for III-Nitride Devices journal, July 2010

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride journal, February 2016

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Synthesis and emerging properties of 2D layered III–VI metal chalcogenides journal, December 2019

Two-dimensional amorphous nanomaterials: synthesis and applications journal, May 2019

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
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High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
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Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
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Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
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Synthesis and Photoresponse of Large GaSe Atomic Layers
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High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
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Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide
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Template Approach to Crystalline GaN Nanosheets
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