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Title: III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Abstract

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. In conclusion, we demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

Authors:
 [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1488632
Alternate Identifier(s):
OSTI ID: 1491440
Report Number(s):
NREL/JA-5900-70908
Journal ID: ISSN 2073-4352; CRYSBC
Grant/Contract Number:  
AC36-08GO28308; 15/CJ000/07/05; 30290
Resource Type:
Published Article
Journal Name:
Crystals
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2073-4352
Publisher:
MDPI
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; HVPE; III-V semiconductors

Citation Formats

Simon, John, Schulte, Kevin L., Horowitz, Kelsey A. W., Remo, Timothy, Young, David L., and Ptak, Aaron J. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. United States: N. p., 2018. Web. doi:10.3390/cryst9010003.
Simon, John, Schulte, Kevin L., Horowitz, Kelsey A. W., Remo, Timothy, Young, David L., & Ptak, Aaron J. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. United States. doi:10.3390/cryst9010003.
Simon, John, Schulte, Kevin L., Horowitz, Kelsey A. W., Remo, Timothy, Young, David L., and Ptak, Aaron J. Thu . "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy". United States. doi:10.3390/cryst9010003.
@article{osti_1488632,
title = {III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy},
author = {Simon, John and Schulte, Kevin L. and Horowitz, Kelsey A. W. and Remo, Timothy and Young, David L. and Ptak, Aaron J.},
abstractNote = {Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. In conclusion, we demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.},
doi = {10.3390/cryst9010003},
journal = {Crystals},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.3390/cryst9010003

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Schematic of the two-chamber dynamic hydride vapor phase epitaxy (D-HVPE) reactor at NREL, showing the side-by-side steady-state reactions for GaAs and GaInP. The substrate is rapidly shuttled between the growth chambers to create high-quality, chemically-abrupt interfaces.

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.