Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Abstract

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. In conclusion, we demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1488632
Alternate Identifier(s):
OSTI ID: 1491440
Report Number(s):
NREL/JA-5900-70908
Journal ID: ISSN 2073-4352; CRYSBC; PII: cryst9010003
Grant/Contract Number:  
15/CJ000/07/05; 30290; AC36-08GO28308
Resource Type:
Published Article
Journal Name:
Crystals
Additional Journal Information:
Journal Name: Crystals Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2073-4352
Publisher:
MDPI AG
Country of Publication:
Germany
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; HVPE; III-V semiconductors

Citation Formats

Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, and Ptak, Aaron. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Germany: N. p., 2018. Web. doi:10.3390/cryst9010003.
Copy to clipboard
Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, & Ptak, Aaron. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Germany. https://doi.org/10.3390/cryst9010003
Copy to clipboard
Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, and Ptak, Aaron. Thu . "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy". Germany. https://doi.org/10.3390/cryst9010003.
Copy to clipboard
@article{osti_1488632,
title = {III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy},
author = {Simon, John and Schulte, Kevin and Horowitz, Kelsey and Remo, Timothy and Young, David and Ptak, Aaron},
abstractNote = {Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. In conclusion, we demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.},
doi = {10.3390/cryst9010003},
journal = {Crystals},
number = 1,
volume = 9,
place = {Germany},
year = {2018},
month = {12}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.3390/cryst9010003
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Schematic of the two-chamber dynamic hydride vapor phase epitaxy (D-HVPE) reactor at NREL, showing the side-by-side steady-state reactions for GaAs and GaInP. The substrate is rapidly shuttled between the growth chambers to create high-quality, chemically-abrupt interfaces.
All figures and tables (8 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

VERY RAPID GROWTH OF HIGH QUALITY GaAs, InP AND RELATED III-V COMPOUNDS
journal, September 1988

The Passivated Emitter and Rear Cell (PERC): From conception to mass production
journal, December 2015

Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells
journal, May 2016

  • Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey
  • Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 9
  • DOI: 10.1002/pip.2776

Thin-film solar cells with over 21% conversion efficiency
journal, October 1989

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987

  • Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.
  • Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224
  • DOI: 10.1063/1.98946

Development of GaInP Solar Cells Grown by Hydride Vapor Phase Epitaxy
journal, July 2017

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034

New Phenomenon in Narrow Germanium p − n Junctions
journal, January 1958

Multijunction Ga 0.5 In 0.5 P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy
journal, June 2018

  • Schulte, Kevin L.; Simon, John; Ptak, Aaron J.
  • Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 11
  • DOI: 10.1002/pip.3027

Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
journal, March 1985

  • Usui, Akira; Matsumoto, Takashi; Inai, Motohiko
  • Japanese Journal of Applied Physics, Vol. 24, Issue Part 2, No. 3
  • DOI: 10.1143/JJAP.24.L163

Reuse of GaAs substrates for epitaxial lift-off by employing protection layers
journal, February 2012

  • Lee, Kyusang; Zimmerman, Jeramy D.; Xiao, Xin
  • Journal of Applied Physics, Vol. 111, Issue 3
  • DOI: 10.1063/1.3684555

Solar cell efficiency tables (version 50)
journal, June 2017

  • Green, Martin A.; Hishikawa, Yoshihiro; Warta, Wilhelm
  • Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 7
  • DOI: 10.1002/pip.2909

Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy
journal, November 2018

    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
    journal, July 2019

      Sort by:
      [ × clear filter / sort ]

      Figures / Tables found in this record:

      Figure 1 (p. 3)figure
      Figure 2 (p. 3)figure
      Figure 3 (p. 5)figure
      Figure 4 (p. 7)figure
      Figure 5 (p. 8)figure
      Figure 6 (p. 9)figure
      Figure A1 (p. 10)figure
      Table A1 (p. 11)table
        [ × clear filter / sort ]
        Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

        Similar Records in DOE PAGES and OSTI.GOV collections: