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Title: III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Abstract

Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. In conclusion, we demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1488632
Alternate Identifier(s):
OSTI ID: 1491440
Report Number(s):
NREL/JA-5900-70908
Journal ID: ISSN 2073-4352; CRYSBC; PII: cryst9010003
Grant/Contract Number:  
15/CJ000/07/05; 30290; AC36-08GO28308
Resource Type:
Published Article
Journal Name:
Crystals
Additional Journal Information:
Journal Name: Crystals Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2073-4352
Publisher:
MDPI AG
Country of Publication:
Germany
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; HVPE; III-V semiconductors

Citation Formats

Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, and Ptak, Aaron. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Germany: N. p., 2018. Web. doi:10.3390/cryst9010003.
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Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, & Ptak, Aaron. III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy. Germany. https://doi.org/10.3390/cryst9010003
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Simon, John, Schulte, Kevin, Horowitz, Kelsey, Remo, Timothy, Young, David, and Ptak, Aaron. Thu . "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy". Germany. https://doi.org/10.3390/cryst9010003.
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@article{osti_1488632,
title = {III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy},
author = {Simon, John and Schulte, Kevin and Horowitz, Kelsey and Remo, Timothy and Young, David and Ptak, Aaron},
abstractNote = {Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. In conclusion, we demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.},
doi = {10.3390/cryst9010003},
journal = {Crystals},
number = 1,
volume = 9,
place = {Germany},
year = {Thu Dec 20 00:00:00 EST 2018},
month = {Thu Dec 20 00:00:00 EST 2018}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.3390/cryst9010003
Copyright Statement
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Citation Metrics:
Cited by: 35 works
Citation information provided by
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Figures / Tables:

Figure 1 Figure 1: Schematic of the two-chamber dynamic hydride vapor phase epitaxy (D-HVPE) reactor at NREL, showing the side-by-side steady-state reactions for GaAs and GaInP. The substrate is rapidly shuttled between the growth chambers to create high-quality, chemically-abrupt interfaces.
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Works referenced in this record:

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Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy
journal, November 2018

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    Works referencing / citing this record:

    Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
    journal, July 2019

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      Figures / Tables found in this record:

      Figure 1 (p. 3)figure
      Figure 2 (p. 3)figure
      Figure 3 (p. 5)figure
      Figure 4 (p. 7)figure
      Figure 5 (p. 8)figure
      Figure 6 (p. 9)figure
      Figure A1 (p. 10)figure
      Table A1 (p. 11)table
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