Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction
Abstract
Abstract Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas‐phase temperatures that would destroy the device being coated. The development of freestanding, thin boron‐doped diamond nanosheets grown on tantalum foil substrates via microwave plasma‐assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO 2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free‐standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet–graphene field effect transistor‐like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low‐temperature diamond‐based transistor.
- Authors:
-
[1];
- Gdańsk University of Technology (Poland)
- California Institute of Technology (CalTech), Pasadena, CA (United States)
- Univ. of California, Riverside, CA (United States)
- Univ. of Gdansk (Poland)
- Publication Date:
- Research Org.:
- Univ. of Southern California, Los Angeles, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); Polish National Science Centre (NCN)
- OSTI Identifier:
- 1612242
- Alternate Identifier(s):
- OSTI ID: 1488352
- Grant/Contract Number:
- SC0014607; 2015/16/T/ST7/00469; 2016/21/B/ST7/01430; 2016/22/E/ST7/00102; 2014/14/M/ST5/00715; 347324; G5147; DE‐SC0014607
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 3; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; chemistry; science & technology; materials science; physics; carrier transfer; chemical vapor deposition; freestanding diamond nanosheets; graphene; heterojunction
Citation Formats
Bogdanowicz, R., Ficek, M., Sobaszek, M., Nosek, A., Gołuński, Ł., Karczewski, J., Jaramillo‐Botero, A., Goddard, W. A., Bockrath, M., and Ossowski, T. Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction. United States: N. p., 2018.
Web. doi:10.1002/adfm.201805242.
Bogdanowicz, R., Ficek, M., Sobaszek, M., Nosek, A., Gołuński, Ł., Karczewski, J., Jaramillo‐Botero, A., Goddard, W. A., Bockrath, M., & Ossowski, T. Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction. United States. https://doi.org/10.1002/adfm.201805242
Bogdanowicz, R., Ficek, M., Sobaszek, M., Nosek, A., Gołuński, Ł., Karczewski, J., Jaramillo‐Botero, A., Goddard, W. A., Bockrath, M., and Ossowski, T. Thu .
"Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction". United States. https://doi.org/10.1002/adfm.201805242. https://www.osti.gov/servlets/purl/1612242.
@article{osti_1612242,
title = {Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction},
author = {Bogdanowicz, R. and Ficek, M. and Sobaszek, M. and Nosek, A. and Gołuński, Ł. and Karczewski, J. and Jaramillo‐Botero, A. and Goddard, W. A. and Bockrath, M. and Ossowski, T.},
abstractNote = {Abstract Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas‐phase temperatures that would destroy the device being coated. The development of freestanding, thin boron‐doped diamond nanosheets grown on tantalum foil substrates via microwave plasma‐assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO 2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free‐standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet–graphene field effect transistor‐like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low‐temperature diamond‐based transistor.},
doi = {10.1002/adfm.201805242},
journal = {Advanced Functional Materials},
number = 3,
volume = 29,
place = {United States},
year = {Thu Nov 22 00:00:00 EST 2018},
month = {Thu Nov 22 00:00:00 EST 2018}
}
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