Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin‐Film Bilayered Heterostructures

Lee, Dongwook; Zhou, Jiawei; Chen, Gang; Shao‐Horn, Yang

doi:10.1002/aelm.201800624

Title: Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin‐Film Bilayered Heterostructures

Journal Article · 22 November 2018 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.201800624 · OSTI ID:1488350

Lee, Dongwook ^[1]; Zhou, Jiawei ^[2]; Chen, Gang ^[2]; Shao‐Horn, Yang ^[3]

Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA, Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA, The Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA 02139 USA

Abstract Modulation doping is one of the strategies to improve thermoelectric power factors of nanocomposites and thin‐film bilayered heterostructures by effectively increasing electrical conductivity. Here, it is reported that thin‐film heterostructures of heavily doped p‐type organic conducting polymer, poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and undoped thin‐film Ge can enhance thermoelectric power factor by modulation doping. The maximum power factor and Seebeck coefficient of the bilayered heterostructures are 154 µW m ⁻¹ K ⁻² and 398 µV K ⁻¹ , respectively, corresponding to 47‐fold and 41‐fold increases compared to those of bulk PEDOT:PSS and 64‐fold increase compared to power factor of undoped Ge. The enhancements in power factor and Seebeck coefficient are quantitatively described by the hole transfer from PEDOT:PSS to Ge, which takes into account the band alignment at the interface detected by Kraut's method. Agreement between the simulation and experiment results also implies predictability of thermoelectric performances of nanoscale bilayered heterostructures in general, when band offset, Fermi level, and individual electronic properties are available. This work can be further extended to predict performance of other nanoscale combinations of thermoelectric and other electronic materials in general.

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Sponsoring Organization:: USDOE

OSTI ID:: 1488350

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 3 Vol. 5; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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