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Title: Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures

Authors:
 [1];  [2];  [2];  [3]
  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA, Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA, The Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge MA 02139 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1488350
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 3; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Dongwook, Zhou, Jiawei, Chen, Gang, and Shao-Horn, Yang. Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures. United States: N. p., 2018. Web. doi:10.1002/aelm.201800624.
Lee, Dongwook, Zhou, Jiawei, Chen, Gang, & Shao-Horn, Yang. Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures. United States. doi:10.1002/aelm.201800624.
Lee, Dongwook, Zhou, Jiawei, Chen, Gang, and Shao-Horn, Yang. Thu . "Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures". United States. doi:10.1002/aelm.201800624.
@article{osti_1488350,
title = {Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures},
author = {Lee, Dongwook and Zhou, Jiawei and Chen, Gang and Shao-Horn, Yang},
abstractNote = {},
doi = {10.1002/aelm.201800624},
journal = {Advanced Electronic Materials},
number = 3,
volume = 5,
place = {United States},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/aelm.201800624

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Cited by: 1 work
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  • Yu, Choongho; Choi, Kyungwho; Yin, Liang
  • ACS Nano, Vol. 5, Issue 10
  • DOI: 10.1021/nn202868a

Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
journal, March 2010

  • Zhou, Yi; Han, Wei; Wang, Yong
  • Applied Physics Letters, Vol. 96, Issue 10
  • DOI: 10.1063/1.3357423

Enhancement of thermoelectric power factor in composite thermoelectrics
journal, June 1999

  • Bergman, David J.; Fel, Leonid G.
  • Journal of Applied Physics, Vol. 85, Issue 12
  • DOI: 10.1063/1.370660

Superionic Phase Transition in Silver Chalcogenide Nanocrystals Realizing Optimized Thermoelectric Performance
journal, February 2012

  • Xiao, Chong; Xu, Jie; Li, Kun
  • Journal of the American Chemical Society, Vol. 134, Issue 9
  • DOI: 10.1021/ja2104476

Band offsets of n-type electron-selective contacts on cuprous oxide (Cu2O) for photovoltaics
journal, December 2014

  • Brandt, Riley E.; Young, Matthew; Park, Helen Hejin
  • Applied Physics Letters, Vol. 105, Issue 26
  • DOI: 10.1063/1.4905180

Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution
journal, March 2017


Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution
journal, February 2004


Copper ion liquid-like thermoelectrics
journal, March 2012

  • Liu, Huili; Shi, Xun; Xu, Fangfang
  • Nature Materials, Vol. 11, Issue 5, p. 422-425
  • DOI: 10.1038/nmat3273

Fermi-level pinning and charge neutrality level in germanium
journal, December 2006

  • Dimoulas, A.; Tsipas, P.; Sotiropoulos, A.
  • Applied Physics Letters, Vol. 89, Issue 25
  • DOI: 10.1063/1.2410241

Enhanced Thermoelectric Performance in 18-Electron Nb 0.8 CoSb Half-Heusler Compound with Intrinsic Nb Vacancies
journal, January 2018

  • Xia, Kaiyang; Liu, Yintu; Anand, Shashwat
  • Advanced Functional Materials, Vol. 28, Issue 9
  • DOI: 10.1002/adfm.201705845