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Title: Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures

 [1];  [2];  [2];  [3]
  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA, Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 USA, The Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge MA 02139 USA
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 3; Journal ID: ISSN 2199-160X
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States

Citation Formats

Lee, Dongwook, Zhou, Jiawei, Chen, Gang, and Shao-Horn, Yang. Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures. United States: N. p., 2018. Web. doi:10.1002/aelm.201800624.
Lee, Dongwook, Zhou, Jiawei, Chen, Gang, & Shao-Horn, Yang. Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures. United States. doi:10.1002/aelm.201800624.
Lee, Dongwook, Zhou, Jiawei, Chen, Gang, and Shao-Horn, Yang. Thu . "Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures". United States. doi:10.1002/aelm.201800624.
title = {Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures},
author = {Lee, Dongwook and Zhou, Jiawei and Chen, Gang and Shao-Horn, Yang},
abstractNote = {},
doi = {10.1002/aelm.201800624},
journal = {Advanced Electronic Materials},
number = 3,
volume = 5,
place = {United States},
year = {2018},
month = {11}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1002/aelm.201800624

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