Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures

Naylor, Carl H.; Parkin, William M.; Gao, Zhaoli; Berry, Joel; Zhou, Songsong; Zhang, Qicheng; McClimon, John Brandon; Tan, Liang Z.; Kehayias, Christopher E.; Zhao, Meng-Qiang; Gona, Ram S.; Carpick, Robert W.; Rappe, Andrew M.; Srolovitz, David J.; Drndic, Marija; Johnson, Alan T.  Charlie

doi:10.1021/acsnano.7b03828

Title: Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures

Abstract

Heterostructures of transition metal dichalcogenides (TMDs) offer the attractive prospect of combining distinct physical properties derived from different TMD structures. Here, we report direct chemical vapor deposition of in-plane monolayer heterostructures based on 1H-MoS₂ and 1T'-MoTe₂. The large lattice mismatch between these materials led to intriguing phenomena at their interface. Atomic force microscopy indicated buckling in the 1H region. Tip-enhanced Raman spectroscopy showed mode structure consistent with Te substitution in the 1H region during 1T'-MoTe₂ growth. This was confirmed by atomic resolution transmission electron microscopy, which also revealed an atomically stitched, dislocation-free 1H/1T' interface. Theoretical modeling revealed that both the buckling and absence of interfacial misfit dislocations were explained by lateral gradients in Te substitution levels within the 1H region and elastic coupling between 1H and 1T' domains. Phase field simulations predicted 1T' morphologies with spike-shaped islands at specific orientations consistent with experiments. Electrical measurements across the heterostructure confirmed its electrical continuity. This work demonstrates the feasibility of dislocation-free stitching of two different atomic configurations and a pathway toward direct synthesis of monolayer TMD heterostructures of different phases.

Authors:

Naylor, Carl H. ^[1]; Parkin, William M. ^[1]; Gao, Zhaoli ^[1]; Berry, Joel ^[1]; Zhou, Songsong ^[1]; Zhang, Qicheng ^[1]; McClimon, John Brandon ^[1];

^[1]; Kehayias, Christopher E. ^[1]; Zhao, Meng-Qiang ^[1]; Gona, Ram S. ^[1]; Carpick, Robert W. ^[1];

^[1];

^[1]; Drndic, Marija ^[1];

^[1]

Univ. of Pennsylvania, Philadelphia, PA (United States)

Publication Date:: Wed Aug 02 00:00:00 EDT 2017

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1487450

Grant/Contract Number:: SC0012575; FG02-07ER15920

Resource Type:: Accepted Manuscript

Journal Name:: ACS Nano

Additional Journal Information:: Journal Volume: 11; Journal Issue: 9; Journal ID: ISSN 1936-0851

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; chemical vapor deposition; heterostructure; monolayer; phase engineering; two-dimensional materials

Citation Formats


                    Naylor, Carl H., Parkin, William M., Gao, Zhaoli, Berry, Joel, Zhou, Songsong, Zhang, Qicheng, McClimon, John Brandon, Tan, Liang Z., Kehayias, Christopher E., Zhao, Meng-Qiang, Gona, Ram S., Carpick, Robert W., Rappe, Andrew M., Srolovitz, David J., Drndic, Marija, and Johnson, Alan T.  Charlie. Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures.  United States: N. p., 2017. 
Web.  doi:10.1021/acsnano.7b03828.

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                    Naylor, Carl H., Parkin, William M., Gao, Zhaoli, Berry, Joel, Zhou, Songsong, Zhang, Qicheng, McClimon, John Brandon, Tan, Liang Z., Kehayias, Christopher E., Zhao, Meng-Qiang, Gona, Ram S., Carpick, Robert W., Rappe, Andrew M., Srolovitz, David J., Drndic, Marija, & Johnson, Alan T.  Charlie. Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures.  United States.  https://doi.org/10.1021/acsnano.7b03828

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                    Naylor, Carl H., Parkin, William M., Gao, Zhaoli, Berry, Joel, Zhou, Songsong, Zhang, Qicheng, McClimon, John Brandon, Tan, Liang Z., Kehayias, Christopher E., Zhao, Meng-Qiang, Gona, Ram S., Carpick, Robert W., Rappe, Andrew M., Srolovitz, David J., Drndic, Marija, and Johnson, Alan T.  Charlie. Wed .  
"Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures".  United States.  https://doi.org/10.1021/acsnano.7b03828.  https://www.osti.gov/servlets/purl/1487450.

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@article{osti_1487450,

  title        = {Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures},

  author       = {Naylor, Carl H. and Parkin, William M. and Gao, Zhaoli and Berry, Joel and Zhou, Songsong and Zhang, Qicheng and McClimon, John Brandon and Tan, Liang Z. and Kehayias, Christopher E. and Zhao, Meng-Qiang and Gona, Ram S. and Carpick, Robert W. and Rappe, Andrew M. and Srolovitz, David J. and Drndic, Marija and Johnson, Alan T.  Charlie},

  abstractNote = {Heterostructures of transition metal dichalcogenides (TMDs) offer the attractive prospect of combining distinct physical properties derived from different TMD structures. Here, we report direct chemical vapor deposition of in-plane monolayer heterostructures based on 1H-MoS2 and 1T'-MoTe2. The large lattice mismatch between these materials led to intriguing phenomena at their interface. Atomic force microscopy indicated buckling in the 1H region. Tip-enhanced Raman spectroscopy showed mode structure consistent with Te substitution in the 1H region during 1T'-MoTe2 growth. This was confirmed by atomic resolution transmission electron microscopy, which also revealed an atomically stitched, dislocation-free 1H/1T' interface. Theoretical modeling revealed that both the buckling and absence of interfacial misfit dislocations were explained by lateral gradients in Te substitution levels within the 1H region and elastic coupling between 1H and 1T' domains. Phase field simulations predicted 1T' morphologies with spike-shaped islands at specific orientations consistent with experiments. Electrical measurements across the heterostructure confirmed its electrical continuity. This work demonstrates the feasibility of dislocation-free stitching of two different atomic configurations and a pathway toward direct synthesis of monolayer TMD heterostructures of different phases.},

  doi          = {10.1021/acsnano.7b03828},

  journal      = {ACS Nano},

  number       = 9,

  volume       = 11,

  place        = {United States},

  year         = {Wed Aug 02 00:00:00 EDT 2017},

  month        = {Wed Aug 02 00:00:00 EDT 2017}

}

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Title: Synthesis and Physical Properties of Phase-Engineered Transition Metal Dichalcogenide Monolayer Heterostructures

Abstract

Citation Formats

Van der Waals heterostructures journal, July 2013

Recent Advances in Two-Dimensional Materials beyond Graphene journal, October 2015

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Two-dimensional atomic crystals journal, July 2005

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Scalable Production of Molybdenum Disulfide Based Biosensors journal, May 2016

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Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2 journal, March 2010

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Large-area synthesis of high-quality monolayer 1T’-WTe 2 flakes journal, February 2017

Absorption dichroism of monolayer 1T′-MoTe 2 in visible range journal, September 2016

Large-Area and High-Quality 2D Transition Metal Telluride journal, November 2016

Intrinsic Phonon Bands in High-Quality Monolayer T ′ Molybdenum Ditelluride journal, December 2016

Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe 2 journal, January 2016

Enhanced first-order Raman scattering from arrays of vertical silicon nanowires journal, June 2012

Phase stability and Raman vibration of the molybdenum ditelluride (MoTe 2 ) monolayer journal, January 2015

Bandgap opening in few-layered monoclinic MoTe2 journal, May 2015

From Bulk to Monolayer MoS2: Evolution of Raman Scattering journal, January 2012

Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing journal, April 2013

MoS 2 edges and heterophase interfaces: energy, structure and phase engineering journal, April 2017

Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers journal, March 2017

Diffusion-Mediated Synthesis of MoS 2 /WS 2 Lateral Heterostructures journal, August 2016

Vertical and in-plane heterostructures from WS2/MoS2 monolayers journal, September 2014

Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors journal, August 2014

Role of the Seeding Promoter in MoS 2 Growth by Chemical Vapor Deposition journal, January 2014

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr journal, September 2012

High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold journal, June 1972

Changes in structure and chemical composition of α-MoTe 2 and β-MoTe 2 during heating in vacuum conditions journal, August 2015

MoS2—an integrated protective and active layer on n+p-Si for solar H2 evolution journal, January 2013

Control of Radiation Damage in MoS 2 by Graphene Encapsulation journal, October 2013

Novel structured transition metal dichalcogenide nanosheets journal, January 2018

2D Layered Material-Based van der Waals Heterostructures for Optoelectronics journal, January 2018

Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides journal, December 2018

The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials journal, November 2019

Strategies on Phase Control in Transition Metal Dichalcogenides journal, August 2018

Recent advances in the preparation, characterization, and applications of two-dimensional heterostructures for energy storage and conversion journal, January 2018

Higher-Order Topology, Monopole Nodal Lines, and the Origin of Large Fermi Arcs in Transition Metal Dichalcogenides X Te 2 ( X = Mo , W ) journal, October 2019

The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials journal, November 2019

Van der Waals heterostructures
journal, July 2013

Recent Advances in Two-Dimensional Materials beyond Graphene
journal, October 2015

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
journal, July 2015

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges
journal, January 2015

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
journal, November 2014

The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
journal, May 1969

Phase patterning for ohmic homojunction contact in MoTe2
journal, August 2015

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers
journal, July 2014

Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors
journal, August 2014

Two-dimensional atomic crystals
journal, July 2005

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
journal, February 2011

Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations
journal, January 2015

Scalable Production of Molybdenum Disulfide Based Biosensors
journal, May 2016

Monolayer Single-Crystal 1T′-MoTe ₂ Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect
journal, June 2016

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
journal, April 2015

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
journal, April 2015

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
journal, March 2010

Monolayer WS ₂ Nanopores for DNA Translocation with Light-Adjustable Sizes
journal, February 2017

Growth and Optical Properties of High-Quality Monolayer WS ₂ on Graphite
journal, February 2015

Thickness-dependent bandgap tunable molybdenum disulfide films for optoelectronics
journal, January 2016

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2
journal, April 2014

Type-II Weyl semimetals
journal, November 2015

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride
journal, July 2015

Large, non-saturating magnetoresistance in WTe2
journal, September 2014

Large-area synthesis of high-quality monolayer 1T’-WTe ₂ flakes
journal, February 2017

Absorption dichroism of monolayer 1T′-MoTe ₂ in visible range
journal, September 2016

Large-Area and High-Quality 2D Transition Metal Telluride
journal, November 2016

Intrinsic Phonon Bands in High-Quality Monolayer T ′ Molybdenum Ditelluride
journal, December 2016

Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe ₂
journal, January 2016

Enhanced first-order Raman scattering from arrays of vertical silicon nanowires
journal, June 2012

Phase stability and Raman vibration of the molybdenum ditelluride (MoTe ₂ ) monolayer
journal, January 2015

Bandgap opening in few-layered monoclinic MoTe2
journal, May 2015

From Bulk to Monolayer MoS2: Evolution of Raman Scattering
journal, January 2012

Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
journal, April 2013

MoS ₂ edges and heterophase interfaces: energy, structure and phase engineering
journal, April 2017

Dynamic Phase Engineering of Bendable Transition Metal Dichalcogenide Monolayers
journal, March 2017

Diffusion-Mediated Synthesis of MoS ₂ /WS ₂ Lateral Heterostructures
journal, August 2016

Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers
journal, September 2014

Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors
journal, August 2014

Role of the Seeding Promoter in MoS ₂ Growth by Chemical Vapor Deposition
journal, January 2014

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr
journal, September 2012

High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold
journal, June 1972

Changes in structure and chemical composition of α-MoTe ₂ and β-MoTe ₂ during heating in vacuum conditions
journal, August 2015

MoS2—an integrated protective and active layer on n+p-Si for solar H2 evolution
journal, January 2013

Control of Radiation Damage in MoS ₂ by Graphene Encapsulation
journal, October 2013

Novel structured transition metal dichalcogenide nanosheets
journal, January 2018

2D Layered Material-Based van der Waals Heterostructures for Optoelectronics
journal, January 2018

Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides
journal, December 2018

The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials
journal, November 2019

Strategies on Phase Control in Transition Metal Dichalcogenides
journal, August 2018

Recent advances in the preparation, characterization, and applications of two-dimensional heterostructures for energy storage and conversion
journal, January 2018

Higher-Order Topology, Monopole Nodal Lines, and the Origin of Large Fermi Arcs in Transition Metal Dichalcogenides X Te 2 ( X = Mo , W )
journal, October 2019

The MoSeS dynamic omnigami paradigm for smart shape and composition programmable 2D materials
journal, November 2019