Photoresponse of Natural van der Waals Heterostructures
Abstract
Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. In this paper, we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ~1500 nm (~830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast asmore »
- Authors:
-
[2];
[1]
- San Francisco State Univ., CA (United States)
- Univ. of Oklahoma, Norman, OK (United States)
- Stanford Univ., CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1487448
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 6; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; density functional theory; electronic transport; franckeite; photocurrent spectroscopy; photodetectors; van der Waals heterostructure
Citation Formats
Ray, Kyle, Yore, Alexander E., Mou, Tong, Jha, Sauraj, Smithe, Kirby K. H., Wang, Bin, Pop, Eric, and Newaz, A. K. M. Photoresponse of Natural van der Waals Heterostructures. United States: N. p., 2017.
Web. doi:10.1021/acsnano.7b01918.
Ray, Kyle, Yore, Alexander E., Mou, Tong, Jha, Sauraj, Smithe, Kirby K. H., Wang, Bin, Pop, Eric, & Newaz, A. K. M. Photoresponse of Natural van der Waals Heterostructures. United States. https://doi.org/10.1021/acsnano.7b01918
Ray, Kyle, Yore, Alexander E., Mou, Tong, Jha, Sauraj, Smithe, Kirby K. H., Wang, Bin, Pop, Eric, and Newaz, A. K. M. Tue .
"Photoresponse of Natural van der Waals Heterostructures". United States. https://doi.org/10.1021/acsnano.7b01918. https://www.osti.gov/servlets/purl/1487448.
@article{osti_1487448,
title = {Photoresponse of Natural van der Waals Heterostructures},
author = {Ray, Kyle and Yore, Alexander E. and Mou, Tong and Jha, Sauraj and Smithe, Kirby K. H. and Wang, Bin and Pop, Eric and Newaz, A. K. M.},
abstractNote = {Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. In this paper, we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ~1500 nm (~830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ~1 ms. Finally, our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.},
doi = {10.1021/acsnano.7b01918},
journal = {ACS Nano},
number = 6,
volume = 11,
place = {United States},
year = {Tue May 09 00:00:00 EDT 2017},
month = {Tue May 09 00:00:00 EDT 2017}
}
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Works referencing / citing this record:
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