Ultrawide strain-tuning of light emission from InGaAs nanomembranes

doi:10.1063/1.5055869

This content will become publicly available on November 12, 2019

Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.

Authors:

Wang, Xiaowei ^[1] ; ; ; Savage, Donald E. ^[2] ; Reno, John L. ^[3] ; Lagally, Max G. ^[2] ;

Boston Univ., Boston, MA (United States)
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: 2018-11-12

Report Number(s):: SAND-2018-10086J
Journal ID: ISSN 0003-6951; 667877

Grant/Contract Number:: AC04-94AL85000

Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 113; Journal Issue: 20; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Research Org:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

OSTI Identifier:: 1487417


                    Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes.  United States: N. p.,  
        Web.  doi:10.1063/1.5055869.

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                    Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., & Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes.  United States.  doi:10.1063/1.5055869.

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                    Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. 2018.  
        "Ultrawide strain-tuning of light emission from InGaAs nanomembranes".  United States.  
        doi:10.1063/1.5055869.

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@article{osti_1487417,

  title        = {Ultrawide strain-tuning of light emission from InGaAs nanomembranes},

  author       = {Wang, Xiaowei and Cui, Xiaorui and Bhat, Abhishek and Savage, Donald E. and Reno, John L. and Lagally, Max G. and Paiella, Roberto},

  abstractNote = {Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.},

  doi          = {10.1063/1.5055869},

  journal      = {Applied Physics Letters},

  number       = 20,

  volume       = 113,

  place        = {United States},

  year         = {2018},

  month        = {11}

}

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Free Publicly Accessible Full Text
This content will become publicly available on November 12, 2019
Publisher's Version of Record
10.1063/1.5055869
https://doi.org/10.1063/1.5055869

Works referenced in this record:

Strained-Germanium Nanostructures for Infrared Photonics
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Boztug, Cicek; S�nchez-P�rez, Jos� R.; Cavallo, Francesca
ACS Nano, Vol. 8, Issue 4, p. 3136-3151
DOI: 10.1021/nn404739b

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
journal, November 2011

Sanchez-Perez, J. R.; Boztug, C.; Chen, F.
Proceedings of the National Academy of Sciences, Vol. 108, Issue 47, p. 18893-18898
DOI: 10.1073/pnas.1107968108

Elastically relaxed free-standing strained-silicon nanomembranes
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Roberts, Michelle M.; Klein, Levente J.; Savage, Donald E.
Nature Materials, Vol. 5, Issue 5, p. 388-393
DOI: 10.1038/nmat1606

Stretchable and Foldable Silicon Integrated Circuits
journal, April 2008

Kim, D.-H.; Ahn, J.-H.; Choi, W. M.
Science, Vol. 320, Issue 5875, p. 507-511
DOI: 10.1126/science.1154367

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Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

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