Ultrawide strain-tuning of light emission from InGaAs nanomembranes
- Boston Univ., Boston, MA (United States)
- Univ. of Wisconsin-Madison, Madison, WI (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1487417
- Report Number(s):
- SAND--2018-10086J; 667877
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 113; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
In-place bonded semiconductor membranes as compliant substrates for III–V compound devices
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journal | January 2019 |
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