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Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Abstract

Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2];  [2];  [3];  [2]; ORCiD logo [1]
+ Show Author Affiliations
  1. Boston Univ., Boston, MA (United States)
  2. Univ. of Wisconsin-Madison, Madison, WI (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1487417
Report Number(s):
SAND-2018-10086J
Journal ID: ISSN 0003-6951; 667877
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes. United States: N. p., 2018. Web. doi:10.1063/1.5055869.
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Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., & Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes. United States. doi:10.1063/1.5055869.
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Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Mon . "Ultrawide strain-tuning of light emission from InGaAs nanomembranes". United States. doi:10.1063/1.5055869. https://www.osti.gov/servlets/purl/1487417.
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@article{osti_1487417,
title = {Ultrawide strain-tuning of light emission from InGaAs nanomembranes},
author = {Wang, Xiaowei and Cui, Xiaorui and Bhat, Abhishek and Savage, Donald E. and Reno, John L. and Lagally, Max G. and Paiella, Roberto},
abstractNote = {Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.},
doi = {10.1063/1.5055869},
journal = {Applied Physics Letters},
number = 20,
volume = 113,
place = {United States},
year = {2018},
month = {11}
}
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DOI:  10.1063/1.5055869
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