Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Wang, Xiaowei; Cui, Xiaorui; Bhat, Abhishek; Savage, Donald E.; Reno, John L.; Lagally, Max G.; Paiella, Roberto

doi:10.1063/1.5055869

Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Journal Article · 11 November 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5055869 · OSTI ID:1487417

Wang, Xiaowei ^[1];

^[2];

^[2]; Savage, Donald E. ^[2]; Reno, John L. ^[3]; Lagally, Max G. ^[2];

^[1]

Boston Univ., Boston, MA (United States)
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1487417

Report Number(s):: SAND--2018-10086J; 667877

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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