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Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5055869 · OSTI ID:1487417

Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1487417
Report Number(s):
SAND--2018-10086J; 667877
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 113; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (30)

A Numerical Fourier-analysis Method for the Correction of Widths and Shapes of Lines on X-ray Powder Photographs journal October 1948
Stretchable and Foldable Silicon Integrated Circuits journal April 2008
Strain Engineered SiGe Multiple-Quantum-Well Nanomembranes for Far-Infrared Intersubband Device Applications journal February 2013
Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 165  μm journal January 2018
Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers journal January 2010
Strain engineering and mechanical assembly of silicon/germanium nanomembranes journal June 2018
Improved performance of long-wavelength strained bulk-like semiconductor lasers journal May 1993
Elastically Relaxed Free-standing Strained-Si Nanomembranes text January 2006
Optical Properties of Strained Wurtzite Gallium Phosphide Nanowires journal May 2016
Vacuum-Induced Wrinkle Arrays of InGaAs Semiconductor Nanomembranes on Polydimethylsiloxane Microwell Arrays journal February 2014
Transfer-printed stacked nanomembrane lasers on silicon journal July 2012
Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots other January 2016
Elastically relaxed free-standing strained-silicon nanomembranes journal April 2006
Flexible Single-Crystal Silicon Nanomembrane Photonic Crystal Cavity journal November 2014
Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators journal December 2017
Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots journal January 2016
Low-threshold quantum dot lasers with 201 nm tuning range journal January 2000
Wavelength-tunable sources of entangled photons interfaced with atomic vapours journal January 2016
Flexible Phototransistors Based on Single‐Crystalline Silicon Nanomembranes journal October 2015
Strained-Germanium Nanostructures for Infrared Photonics journal March 2014
Experimental analysis of a broadly tunable ingaasp laser with compositionally varied quantum wells journal March 2003
Reversible Control of In‐Plane Elastic Stress Tensor in Nanomembranes journal February 2016
Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain journal February 2013
Pressure Tuning of the Optical Properties of GaAs Nanowires journal March 2012
Tunable Semiconductor Lasers: A Tutorial journal January 2004
External cavity InAs∕InP quantum dot laser with a tuning range of 166nm journal March 2006
Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs / GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress journal February 2010
Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells journal February 1997
Direct-bandgap light-emitting germanium in tensilely strained nanomembranes journal November 2011
External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication journal January 2002

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