Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Wang, Xiaowei; Cui, Xiaorui; Bhat, Abhishek; Savage, Donald E.; Reno, John L.; Lagally, Max G.; Paiella, Roberto

doi:10.1063/1.5055869

Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Abstract

Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.

Authors:

Wang, Xiaowei ^[1];

^[2];

^[2]; Savage, Donald E. ^[2]; Reno, John L. ^[3]; Lagally, Max G. ^[2];

^[1]

Boston Univ., Boston, MA (United States)
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: 2018-11-12

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1487417

Report Number(s):: SAND-2018-10086J
Journal ID: ISSN 0003-6951; 667877

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 113; Journal Issue: 20; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5055869.

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                    Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., & Paiella, Roberto. Ultrawide strain-tuning of light emission from InGaAs nanomembranes.  United States.  https://doi.org/10.1063/1.5055869

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                    Wang, Xiaowei, Cui, Xiaorui, Bhat, Abhishek, Savage, Donald E., Reno, John L., Lagally, Max G., and Paiella, Roberto. Mon .  
"Ultrawide strain-tuning of light emission from InGaAs nanomembranes".  United States.  https://doi.org/10.1063/1.5055869.  https://www.osti.gov/servlets/purl/1487417.

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@article{osti_1487417,

  title        = {Ultrawide strain-tuning of light emission from InGaAs nanomembranes},

  author       = {Wang, Xiaowei and Cui, Xiaorui and Bhat, Abhishek and Savage, Donald E. and Reno, John L. and Lagally, Max G. and Paiella, Roberto},

  abstractNote = {Single-crystal semiconductor nanomembranes provide unique opportunities for basic studies and device applications of strain engineering by virtue of mechanical properties analogous to those of flexible polymeric materials. Here, we investigate the radiative properties of nanomembranes based on InGaAs (one of the standard active materials for infrared diode lasers) under external mechanical stress. Photoluminescence measurements show that, by varying the applied stress, the InGaAs bandgap energy can be red-shifted by over 250 nm, leading to efficient strain-tunable light emission across the same spectral range. Furthermore, these mechanically stressed nanomembranes could therefore form the basis for actively tunable semiconductor lasers featuring ultrawide tunability of the output wavelength.},

  doi          = {10.1063/1.5055869},

  journal      = {Applied Physics Letters},

  number       = 20,

  volume       = 113,

  place        = {United States},

  year         = {2018},

  month        = {11}

}

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Title: Ultrawide strain-tuning of light emission from InGaAs nanomembranes

Abstract

Citation Formats

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External cavity InAs∕InP quantum dot laser with a tuning range of 166nm journal, March 2006

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Strained-Germanium Nanostructures for Infrared Photonics
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Tunable Semiconductor Lasers: A Tutorial
journal, January 2004

Pressure Tuning of the Optical Properties of GaAs Nanowires
journal, March 2012

Tuning the Light Emission from GaAs Nanowires over 290 meV with Uniaxial Strain
journal, February 2013

Reversible Control of In‐Plane Elastic Stress Tensor in Nanomembranes
journal, February 2016

Strain engineering and mechanical assembly of silicon/germanium nanomembranes
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Experimental analysis of a broadly tunable ingaasp laser with compositionally varied quantum wells
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Transfer-printed stacked nanomembrane lasers on silicon
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Flexible Single-Crystal Silicon Nanomembrane Photonic Crystal Cavity
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Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 165 μm
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Improved performance of long-wavelength strained bulk-like semiconductor lasers
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Low-threshold quantum dot lasers with 201 nm tuning range
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A Numerical Fourier-analysis Method for the Correction of Widths and Shapes of Lines on X-ray Powder Photographs
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External cavity InAs∕InP quantum dot laser with a tuning range of 166nm
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