Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy

Journal Article · 20 September 2018 · ACS Photonics

DOI: https://doi.org/10.1021/acsphotonics.8b00671 · OSTI ID:1487325

Limpens, Rens  ^[1]; Sugimoto, Hiroshi  ^[2]; Neale, Nathan R.  ^[1]; Fujii, Minoru  ^[2]

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1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
2. Kobe Univ. (Japan)

We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC36-08GO28308
• OSTI ID: 1487325
• Report Number(s): NREL/JA--5900-71547
• Journal Information: ACS Photonics, Journal Name: ACS Photonics Journal Issue: 10 Vol. 5; ISSN 2330-4022
• Publisher: American Chemical Society (ACS)Copyright Statement
• Country of Publication: United States
• Language: English