Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy
Journal Article
·
· ACS Photonics
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Kobe Univ. (Japan)
We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1487325
- Report Number(s):
- NREL/JA--5900-71547
- Journal Information:
- ACS Photonics, Journal Name: ACS Photonics Journal Issue: 10 Vol. 5; ISSN 2330-4022
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂
Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2
Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals
Journal Article
·
2014
· Journal of Applied Physics
·
OSTI ID:22305783
Toward Practical Carrier Multiplication: Donor/Acceptor Codoped Si Nanocrystals in SiO 2
Journal Article
·
2017
· ACS Photonics
·
OSTI ID:1478316
+3 more
Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals
Journal Article
·
2014
· AIP Advances
·
OSTI ID:22420194
+3 more