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Title: Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy

Journal Article · · ACS Photonics

We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1487325
Report Number(s):
NREL/JA-5900-71547
Journal Information:
ACS Photonics, Vol. 5, Issue 10; ISSN 2330-4022
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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