Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy
Journal Article
·
· ACS Photonics
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Kobe Univ. (Japan)
We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1487325
- Report Number(s):
- NREL/JA-5900-71547
- Journal Information:
- ACS Photonics, Vol. 5, Issue 10; ISSN 2330-4022
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 7 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Negligible Electronic Interaction between Photoexcited Electron–Hole Pairs and Free Electrons in Phosphorus–Boron Co-Doped Silicon Nanocrystals
Size-Dependent Asymmetric Auger Interactions in Plasma-Produced n- and p-Type-Doped Silicon Nanocrystals
Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂
Journal Article
·
2018
· Journal of Physical Chemistry. C
·
OSTI ID:1427876
+1 more
Size-Dependent Asymmetric Auger Interactions in Plasma-Produced n- and p-Type-Doped Silicon Nanocrystals
Journal Article
·
2019
· Journal of Physical Chemistry. C
·
OSTI ID:1500081
+1 more
Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO₂
Journal Article
·
2014
· Journal of Applied Physics
·
OSTI ID:22305783