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Title: Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy

Abstract

We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Kobe Univ. (Japan)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1487325
Report Number(s):
NREL/JA-5900-71547
Journal ID: ISSN 2330-4022
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
ACS Photonics
Additional Journal Information:
Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2330-4022
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; silicon nanoparticles; substitutional doping; ultrafast spectroscopy; Auger interactions; free carriers

Citation Formats

Limpens, Rens, Sugimoto, Hiroshi, Neale, Nathan R., and Fujii, Minoru. Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy. United States: N. p., 2018. Web. doi:10.1021/acsphotonics.8b00671.
Limpens, Rens, Sugimoto, Hiroshi, Neale, Nathan R., & Fujii, Minoru. Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy. United States. doi:10.1021/acsphotonics.8b00671.
Limpens, Rens, Sugimoto, Hiroshi, Neale, Nathan R., and Fujii, Minoru. Fri . "Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy". United States. doi:10.1021/acsphotonics.8b00671. https://www.osti.gov/servlets/purl/1487325.
@article{osti_1487325,
title = {Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy},
author = {Limpens, Rens and Sugimoto, Hiroshi and Neale, Nathan R. and Fujii, Minoru},
abstractNote = {We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.},
doi = {10.1021/acsphotonics.8b00671},
journal = {ACS Photonics},
number = 10,
volume = 5,
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
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Cited by: 1 work
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