A metasurface optical modulator using voltage-controlled population of quantum well states
Abstract
We present that the ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ~6 pA at a maximum operating bias of +1 V and therefore very lowmore »
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Purdue Univ., West Lafayette, IN (United States)
- Northrop Grumman Corporation, Redondo Beach, CA (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1485838
- Report Number(s):
- SAND-2018-12655J
Journal ID: ISSN 0003-6951; 670031
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 113; Journal Issue: 20; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Le, Loan T., Lange, Michael D., Ye, Peide D., Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., Sinclair, Michael, Wanke, Michael C., and Brener, Igal. A metasurface optical modulator using voltage-controlled population of quantum well states. United States: N. p., 2018.
Web. doi:10.1063/1.5055013.
Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Le, Loan T., Lange, Michael D., Ye, Peide D., Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., Sinclair, Michael, Wanke, Michael C., & Brener, Igal. A metasurface optical modulator using voltage-controlled population of quantum well states. United States. https://doi.org/10.1063/1.5055013
Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Le, Loan T., Lange, Michael D., Ye, Peide D., Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., Sinclair, Michael, Wanke, Michael C., and Brener, Igal. Tue .
"A metasurface optical modulator using voltage-controlled population of quantum well states". United States. https://doi.org/10.1063/1.5055013. https://www.osti.gov/servlets/purl/1485838.
@article{osti_1485838,
title = {A metasurface optical modulator using voltage-controlled population of quantum well states},
author = {Sarma, Raktim and Campione, Salvatore and Goldflam, Michael and Shank, Joshua and Noh, Jinhyun and Le, Loan T. and Lange, Michael D. and Ye, Peide D. and Wendt, Joel and Ruiz, Isaac and Howell, Stephen W. and Sinclair, Michael and Wanke, Michael C. and Brener, Igal},
abstractNote = {We present that the ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ~6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Finally, our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.},
doi = {10.1063/1.5055013},
journal = {Applied Physics Letters},
number = 20,
volume = 113,
place = {United States},
year = {Tue Nov 13 00:00:00 EST 2018},
month = {Tue Nov 13 00:00:00 EST 2018}
}
Web of Science
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