Carrier density control in Cu 2 HgGeTe 4 and discovery of Hg 2 GeTe 4 via phase boundary mapping

Ortiz, Brenden R.; Gordiz, Kiarash; Gomes, Lídia C.; Braden, Tara; Adamczyk, Jesse M.; Qu, Jiaxing; Ertekin, Elif; Toberer, Eric S.

doi:10.1039/C8TA10332A

Title: Carrier density control in Cu ₂ HgGeTe ₄ and discovery of Hg ₂ GeTe ₄ via phase boundary mapping

Journal Article · 02 January 2019 · Journal of Materials Chemistry. A

DOI: https://doi.org/10.1039/C8TA10332A · OSTI ID:1485702

^[1]; Gordiz, Kiarash ^[1]; Gomes, Lídia C. ^[2];

^[1]; Adamczyk, Jesse M. ^[1]; Qu, Jiaxing ^[2];

^[2];

^[1]

Colorado School of Mines, Golden, USA
University of Illinois at Urbana-Champaign, Urbana, USA, National Center for Supercomputing Applications, Urbana

Phase boundary mapping in Cu ₂ HgGeTe ₄ allows discovery of Hg ₂ GeTe ₄ and further enables carrier density control over 4 orders of magnitude.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1485702

Journal Information:: Journal of Materials Chemistry. A, Journal Name: Journal of Materials Chemistry. A Vol. 7 Journal Issue: 2; ISSN 2050-7488

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 23 works

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