Retrieving the energy-loss function from valence electron energy-loss spectrum: Separation of bulk-, surface-losses and Cherenkov radiation

Meng, Qingping; Wu, Lijun; Xin, Huolin L.; Zhu, Yimei

doi:10.1016/j.ultramic.2018.08.014

Title: Retrieving the energy-loss function from valence electron energy-loss spectrum: Separation of bulk-, surface-losses and Cherenkov radiation

Full Record
Other Related Research

Abstract

With recent rapid advancement in electron microscopy instrumentation, in particular, bright electron sources and monochromators, valence electron energy-loss spectroscopy (VEELS) has become attractive for retrieving band structures, optical properties, dielectric functions and phonon information of materials. However, Cherenkov radiation and surface-loss contribution signi cantly alter ne structures of VEELS, even in simple semiconductors and insulators. This leads to the problem that dielectric function or bandgap structure of these materials cannot be determined correctly if these e ects are not removed. In this work we present a solution to this dilemma. We demonstrate that energy-loss function and real part of inverse complex dielectric function can be retrieved from raw data of VEELS. Based on the calculated example of Si, the limitation of our approach is discussed. We believe that our approach represents an improvement over previous procedures and has a broad prospect for applications.

Authors:

Meng, Qingping ^[1]; Wu, Lijun ^[1]; Xin, Huolin L. ^[1]; Zhu, Yimei ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: Mon Aug 20 00:00:00 EDT 2018

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1485442

Alternate Identifier(s):: OSTI ID: 1724315

Report Number(s):: BNL-209677-2018-JAAM
Journal ID: ISSN 0304-3991

Grant/Contract Number:: SC0012704; AC02-98CH10886

Resource Type:: Accepted Manuscript

Journal Name:: Ultramicroscopy

Additional Journal Information:: Journal Volume: 194; Journal Issue: C; Journal ID: ISSN 0304-3991

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Meng, Qingping, Wu, Lijun, Xin, Huolin L., and Zhu, Yimei. Retrieving the energy-loss function from valence electron energy-loss spectrum: Separation of bulk-, surface-losses and Cherenkov radiation.  United States: N. p., 2018. 
Web.  doi:10.1016/j.ultramic.2018.08.014.

Copy to clipboard


                    Meng, Qingping, Wu, Lijun, Xin, Huolin L., & Zhu, Yimei. Retrieving the energy-loss function from valence electron energy-loss spectrum: Separation of bulk-, surface-losses and Cherenkov radiation.  United States.  https://doi.org/10.1016/j.ultramic.2018.08.014

Copy to clipboard


                    Meng, Qingping, Wu, Lijun, Xin, Huolin L., and Zhu, Yimei. Mon .  
"Retrieving the energy-loss function from valence electron energy-loss spectrum: Separation of bulk-, surface-losses and Cherenkov radiation".  United States.  https://doi.org/10.1016/j.ultramic.2018.08.014.  https://www.osti.gov/servlets/purl/1485442.

Copy to clipboard


                    
@article{osti_1485442,

  title        = {Retrieving the energy-loss function from valence electron energy-loss spectrum: Separation of bulk-, surface-losses and Cherenkov radiation},

  author       = {Meng, Qingping and Wu, Lijun and Xin, Huolin L. and Zhu, Yimei},

  abstractNote = {With recent rapid advancement in electron microscopy instrumentation, in particular, bright electron sources and monochromators, valence electron energy-loss spectroscopy (VEELS) has become attractive for retrieving band structures, optical properties, dielectric functions and phonon information of materials. However, Cherenkov radiation and surface-loss contribution signi cantly alter ne structures of VEELS, even in simple semiconductors and insulators. This leads to the problem that dielectric function or bandgap structure of these materials cannot be determined correctly if these e ects are not removed. In this work we present a solution to this dilemma. We demonstrate that energy-loss function and real part of inverse complex dielectric function can be retrieved from raw data of VEELS. Based on the calculated example of Si, the limitation of our approach is discussed. We believe that our approach represents an improvement over previous procedures and has a broad prospect for applications.},

  doi          = {10.1016/j.ultramic.2018.08.014},

  journal      = {Ultramicroscopy},

  number       = C,

  volume       = 194,

  place        = {United States},

  year         = {Mon Aug 20 00:00:00 EDT 2018},

  month        = {Mon Aug 20 00:00:00 EDT 2018}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1016/j.ultramic.2018.08.014

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Development of SRF monolayer/multilayer thin film materials to increase the performance of SRF accelerating structures beyond bulk Nb

Thesis/Dissertation VALENTE-FELICIANO, Anne-Marie

The minimization of cost and energy consumption of future particle accelerators, both large and small, depends upon the development of new materials for the active surfaces of superconducting RF (SRF) accelerating structures. SRF properties are inherently a surface phenomenon as the RF only penetrates the London penetration depth ?, typically between 20 and 400 nm depending on the material. The greatest potential for dramatic new performance capabilities lies with methods and materials which deliberately produce the sub-micron-thick critical surface layer in a controlled way. Thus, two opportunities arise for the use of SRF thin ?lms as single layer superconductor ormore »« less
Full Text Available
Signatures of distinct impurity configurations in atomic-resolution valence electron-energy-loss spectroscopy: Application to graphene

Journal Article Kapetanakis, Myron D. ; Oxley, Mark P. ; Zhou, Wu ; ... - Physical Review B

The detection and identification of impurities and other point defects in materials is a challenging task. Signatures for point defects are typically obtained using spectroscopies without spatial resolution. Here in this paper, we demonstrate the power of valence electron-energy-loss spectroscopy (VEELS) in an aberration-corrected scanning transmission-electron microscope (STEM) to provide energy-resolved and atomically resolved maps of electronic excitations of individual impurities which, combined with theoretical simulations, yield unique signatures of distinct bonding configurations of impurities. We report VEELS maps for isolated Si impurities in graphene, which are known to exist in two distinct configurations. We also report simulations of themore »« less
Cited by 8
https://doi.org/10.1103/PhysRevB.94.155449

Full Text Available
Valence electronenergy-lossspectroscopystudyofZrSiO4 and ZrO2

Journal Article Spence, John ; Jiang, Nan - Ultramicroscopy

ZrSiO4 (zircon) and m-ZrO2 (zirconia) are fundamental and industrially important materials.This work reports the detailed valence electron energy-loss spectroscopy (VEELS) studies of these compounds. The dielectric response functions, as well as single-electron interband transition spectra,are derived from VEELS data for both ZrSiO4 and m-ZrO2, in the rang e5–50 eV using the Kramers–Kronig analysis method. Our interpretation of the interband transitions is given with the aid of ab initio calculations of density of states. The bandgap energies for both materials are also measured using VEELS.The surface and bulk plasmons are identified: the surface plasmon peaks locate at around 12 eV,and twomore »« less
https://doi.org/10.1016/j.ultramic.2013.06.021
Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and ab initio time-dependent density-functional theory

Journal Article Guedj, C. ; CEA, LETI, MINATEC Campus, F-38054 Grenoble ; Hung, L. ; ... - Applied Physics Letters

The effect of nanocrystal orientation on the energy loss spectra of monoclinic hafnia (m-HfO{sub 2}) is measured by high resolution transmission electron microscopy (HRTEM) and valence energy loss spectroscopy (VEELS) on high quality samples. For the same momentum-transfer directions, the dielectric properties are also calculated ab initio by time-dependent density-functional theory (TDDFT). Experiments and simulations evidence anisotropy in the dielectric properties of m-HfO{sub 2}, most notably with the direction-dependent oscillator strength of the main bulk plasmon. The anisotropic nature of m-HfO{sub 2} may contribute to the differences among VEELS spectra reported in literature. The good agreement between the complex dielectricmore »« less
https://doi.org/10.1063/1.4903218
Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in $InAs / In (As, Sb)$ Type-II Superlattices

Journal Article Aytac, Y. ; Olson, B. V. ; Kim, J. K. ; ... - Physical Review Applied

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entiremore »« less
Cited by 16
https://doi.org/10.1103/physrevapplied.5.054016

Full Text Available

Similar Records