Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method

Roy, Utpal N.; Camarda, G. S.; Cui, Y.; Gul, R.; Yang, G.; James, R. B.

doi:10.1063/1.5064373

Title: Charge-Transport Properties of As-Grown Cd_1-xZn_xTe_1-ySe_y by the Traveling Heater Method

Authors:

Roy, Utpal N. ^[1]; Camarda, G. S. ^[1]; Cui, Y. ^[1]; Gul, R. ^[1]; Yang, G. ^[1]; James, R. B. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: 2018-12-28

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE

OSTI Identifier:: 1485437

Alternate Identifier(s):: OSTI ID: 1512418

Report Number(s):: BNL-209676-2018-JAAM; SRNL-STI-2018-00573
Journal ID: ISSN 2158-3226

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 8; Journal Issue: 12; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Roy, Utpal N., Camarda, G. S., Cui, Y., Gul, R., Yang, G., and James, R. B. Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5064373.

Copy to clipboard


                    Roy, Utpal N., Camarda, G. S., Cui, Y., Gul, R., Yang, G., & James, R. B. Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method.  United States.  https://doi.org/10.1063/1.5064373

Copy to clipboard


                    Roy, Utpal N., Camarda, G. S., Cui, Y., Gul, R., Yang, G., and James, R. B. Fri .  
"Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method".  United States.  https://doi.org/10.1063/1.5064373.  https://www.osti.gov/servlets/purl/1485437.

Copy to clipboard


                    
@article{osti_1485437,

  title        = {Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method},

  author       = {Roy, Utpal N. and Camarda, G. S. and Cui, Y. and Gul, R. and Yang, G. and James, R. B.},

  abstractNote = {},

  doi          = {10.1063/1.5064373},

  journal      = {AIP Advances},

  number       = 12,

  volume       = 8,

  place        = {United States},

  year         = {2018},

  month        = {12}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.5064373

Other availability

Search WorldCat to find libraries that may hold this journal

Figures / Tables:

Figure 1: Scanning microscopic images of a CZTS sample in a) reflection mode and b) IR transmission mode. Sample dimensions: 6.35x 4.33x 2.48 mm³.

All figures and tables (7 total)

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors
journal, September 2013

Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.
Journal of Crystal Growth, Vol. 379
DOI: 10.1016/j.jcrysgro.2013.01.048

Evaluation of CdTexSe1−x crystals grown from a Te-rich solution
journal, March 2014

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.
Journal of Crystal Growth, Vol. 389
DOI: 10.1016/j.jcrysgro.2013.11.074

Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals
journal, January 2016

Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 805
DOI: 10.1016/j.nima.2015.08.051

Growth of CdTexSe1−x from a Te-rich solution for applications in radiation detection
journal, January 2014

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.
Journal of Crystal Growth, Vol. 386
DOI: 10.1016/j.jcrysgro.2013.09.039

Growth and interface study of 2in diameter CdZnTe by THM technique
journal, September 2010

Roy, U. N.; Weiler, S.; Stein, J.
Journal of Crystal Growth, Vol. 312, Issue 19
DOI: 10.1016/j.jcrysgro.2010.05.046

Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors
journal, March 1975

Malm, H. L.; Canali, C.; Mayer, J. W.
Applied Physics Letters, Vol. 26, Issue 6
DOI: 10.1063/1.88158

Electronic structure and optical properties of CdSexTe1−x mixed crystals
journal, December 2008

Hannachi, L.; Bouarissa, N.
Superlattices and Microstructures, Vol. 44, Issue 6
DOI: 10.1016/j.spmi.2008.09.013

Growth of spectroscopic grade Cd0.9Zn0.1Te:In by THM technique
journal, December 2009

Roy, U. N.; Gueorguiev, A.; Weiller, S.
Journal of Crystal Growth, Vol. 312, Issue 1
DOI: 10.1016/j.jcrysgro.2009.09.035

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates
journal, May 2005

Brill, G.; Chen, Y.; Amirtharaj, P. M.
Journal of Electronic Materials, Vol. 34, Issue 5
DOI: 10.1007/s11664-005-0080-y

Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride
journal, June 2011

Zhang, Nan; Yeckel, Andrew; Burger, Arnold
Journal of Crystal Growth, Vol. 325, Issue 1
DOI: 10.1016/j.jcrysgro.2011.04.041

Measurement of gamma and neutron radiations inside spent fuel assemblies with passive detectors
journal, October 2011

Viererbl, L.; Lahodová, Z.; Voljanskij, A.
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 652, Issue 1
DOI: 10.1016/j.nima.2010.09.022

Crystal growth of CdTe alloyed with Zn, Se and S
journal, September 1997

Chang, Chung-Yi; Tseng, Bae-Heng
Materials Science and Engineering: B, Vol. 49, Issue 1
DOI: 10.1016/s0921-5107(97)00061-5

Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

Similar Records in DOE PAGES and OSTI.GOV collections:

A comparison of point defects in Cd _1-x Zn _x Te _1-y Se _y crystals grown by Bridgman and traveling heater methods

Journal Article Gul, R. ; Roy, U. N. ; Camarda, G. S. ; ... - Journal of Applied Physics
https://doi.org/10.1063/1.4979012

Full Text Available
A Comparison of Point Defects in Cd_1-xZn_xTe_1-ySe_y Crystals Grown by Bridgman and Traveling Heater Methods

Journal Article Gul, R. ; Roy, U. N. ; Camarda, G. S. ; ... - Journal of Applied Physics

In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides amore »« less
Cited by 4
https://doi.org/10.1063/1.4979012

Full Text Available
Evaluation of crystalline quality of traveling heater method (THM) grown Cd _0.9 Zn _0.1 Te _0.98 Se _0.02 crystals

Journal Article Roy, U. N. ; Baker, J. N. ; Camarda, G. S. ; ... - Applied Physics Letters

Because of its excellent opto-electronic properties, CdZnTe (CZT) has been the material of choice for x- and gamma-ray detectors operable at room temperature. CZT is the leading commercially available room-temperature radiation detector material today. Although much progress has been made over the past three decades, today's CZT crystals still face certain challenges, especially the presence of the performance-limiting materials defects and the associated relatively high production cost. In this regard, Cd _x Zn _1−x Te _y Se _1−y (CZTS) is emerging as a next-generation compound semiconductor, which overcomes some of the limitations of CZT technology for the stated applications. Here,more »« less
https://doi.org/10.1063/5.0093255
Charge Transport and Space-Charge Formation in Cd 1 - x Zn x Te 1 - y Se y Radiation Detectors

Journal Article Pipek, J. ; Betušiak, M. ; Belas, E. ; ... - Physical Review Applied

The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson’s equation. Electron and hole drift mobilities of μe = 830 cm²/Vs and μh = 40 cm²/Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The goodmore »« less
https://doi.org/10.1103/physrevapplied.15.054058

Full Text Available
Growth and Characterization of Arsenic-Doped CdTe_1-xSe_x Single Crystals Grown by the Cd-Solvent Traveling Heater Method

Journal Article Nagaoka, Akira ; Nishioka, Kensuke ; Yoshino, Kenji ; ... - Journal of Electronic Materials

The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe_1-xSe_x single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1-xSex are examined for different Se concentrations. CdTe_1-xSe_x single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 10¹⁷ cm-3 As-doping activation efficiency can be maintained at close to 50% for x ≤more »« less
https://doi.org/10.1007/s11664-020-08343-z

Full Text Available

Similar Records

Title: Charge-Transport Properties of As-Grown Cd1-xZnxTe1-ySey by the Traveling Heater Method

Citation Formats

Figures / Tables:

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors journal, September 2013

Evaluation of CdTexSe1−x crystals grown from a Te-rich solution journal, March 2014

Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals journal, January 2016

Growth of CdTexSe1−x from a Te-rich solution for applications in radiation detection journal, January 2014

Growth and interface study of 2in diameter CdZnTe by THM technique journal, September 2010

Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors journal, March 1975

Electronic structure and optical properties of CdSexTe1−x mixed crystals journal, December 2008

Growth of spectroscopic grade Cd0.9Zn0.1Te:In by THM technique journal, December 2009

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates journal, May 2005

Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride journal, June 2011

Measurement of gamma and neutron radiations inside spent fuel assemblies with passive detectors journal, October 2011

Crystal growth of CdTe alloyed with Zn, Se and S journal, September 1997

Title: Charge-Transport Properties of As-Grown Cd_1-xZn_xTe_1-ySe_y by the Traveling Heater Method

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors
journal, September 2013

Evaluation of CdTexSe1−x crystals grown from a Te-rich solution
journal, March 2014

Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals
journal, January 2016

Growth of CdTexSe1−x from a Te-rich solution for applications in radiation detection
journal, January 2014

Growth and interface study of 2in diameter CdZnTe by THM technique
journal, September 2010

Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors
journal, March 1975

Electronic structure and optical properties of CdSexTe1−x mixed crystals
journal, December 2008

Growth of spectroscopic grade Cd0.9Zn0.1Te:In by THM technique
journal, December 2009

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates
journal, May 2005

Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride
journal, June 2011

Measurement of gamma and neutron radiations inside spent fuel assemblies with passive detectors
journal, October 2011

Crystal growth of CdTe alloyed with Zn, Se and S
journal, September 1997