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Title: Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Abstract

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μ B/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

Authors:
 [1];  [2];  [2];  [2]; ORCiD logo [1]
  1. Univ. of Virginia, Charlottesville, VA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1485072
Alternate Identifier(s):
OSTI ID: 1417420
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., and Reinke, P. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge). United States: N. p., 2018. Web. doi:10.1063/1.4996299.
Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., & Reinke, P. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge). United States. doi:10.1063/1.4996299.
Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., and Reinke, P. Thu . "Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)". United States. doi:10.1063/1.4996299. https://www.osti.gov/servlets/purl/1485072.
@article{osti_1485072,
title = {Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)},
author = {Simov, K. R. and Glans, P. -A. and Jenkins, C. A. and Liberati, M. and Reinke, P.},
abstractNote = {Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.},
doi = {10.1063/1.4996299},
journal = {APL Materials},
number = 1,
volume = 6,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

FIG. 1 FIG. 1: STM images of the Mn-nanostructures, and (a) shows a typical image of the Mn-wires for a coverage of 0.25 ML Mn. This sample was not used in the XMCD experiments and the low coverage allows better visibility of the wires and Si-surface. All other images show samples whichmore » were used after capping in the XMCD analysis. Mn self-assembles on the Si(001)-(2 × 1) surface into wires (b) and (d), mostly wires with few clusters (c) and (e), and only clusters for coverages exceeding 1 ML (f). Details of the wire formation, atomic scale structure, and interplay between wire and cluster formation are given in Refs. 20–22. The top row samples [(b) and (c)] were capped with an amorphous Si layer with a thickness of 10 ML, and bottom row samples [(d)–(f)] were capped with an amorphous Ge layer.« less

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.