Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials
Abstract
Here, the metal–insulator transition (MIT) in correlated materials is a novel phenomenon that accompanies a large change in resistivity, often many orders of magnitude. It is important in its own right but its switching behavior in resistivity can be useful for device applications. From the material physics point of view, the starting point of the research on the MIT should be to understand the microscopic mechanism. Here, an overview of recent efforts to unravel the microscopic mechanisms for various types of MITs in correlated materials is provided. Research has focused on transition metal oxides (TMOs), but transition metal chalcogenides have also been studied. Along the way, a new class of MIT materials is discovered, the so–called relativistic Mott insulators in 5d TMOs. Distortions in the MO6 (M = transition metal) octahedron are found to have a large and peculiar effect on the band structure in an orbital dependent way, possibly paving a way to the orbital selective Mott transition. In the final section, the character of the materials suitable for applications is summarized, followed by a brief discussion of some of the efforts to control MITs in correlated materials, including a dynamical approach using light.
- Authors:
-
- Institute for Basic Science, Seoul (Republic of Korea); Seoul National Univ., Seoul (Republic of Korea)
- Hanyang Univ., Seoul (Republic of Korea)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1484985
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 30; Journal Issue: 42; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; electron–electron correlation; metal–insulator transition; spectroscopy; transition-metal oxides
Citation Formats
Kim, So Yeun, Lee, Min -Cheol, Han, Garam, Kratochvilova, Marie, Yun, Seokhwan, Moon, Soon Jae, Sohn, Changhee, Park, Je -Geun, Kim, Changyoung, and Noh, Tae Won. Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials. United States: N. p., 2018.
Web. doi:10.1002/adma.201704777.
Kim, So Yeun, Lee, Min -Cheol, Han, Garam, Kratochvilova, Marie, Yun, Seokhwan, Moon, Soon Jae, Sohn, Changhee, Park, Je -Geun, Kim, Changyoung, & Noh, Tae Won. Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials. United States. https://doi.org/10.1002/adma.201704777
Kim, So Yeun, Lee, Min -Cheol, Han, Garam, Kratochvilova, Marie, Yun, Seokhwan, Moon, Soon Jae, Sohn, Changhee, Park, Je -Geun, Kim, Changyoung, and Noh, Tae Won. Tue .
"Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials". United States. https://doi.org/10.1002/adma.201704777. https://www.osti.gov/servlets/purl/1484985.
@article{osti_1484985,
title = {Spectroscopic Studies on the Metal-Insulator Transition Mechanism in Correlated Materials},
author = {Kim, So Yeun and Lee, Min -Cheol and Han, Garam and Kratochvilova, Marie and Yun, Seokhwan and Moon, Soon Jae and Sohn, Changhee and Park, Je -Geun and Kim, Changyoung and Noh, Tae Won},
abstractNote = {Here, the metal–insulator transition (MIT) in correlated materials is a novel phenomenon that accompanies a large change in resistivity, often many orders of magnitude. It is important in its own right but its switching behavior in resistivity can be useful for device applications. From the material physics point of view, the starting point of the research on the MIT should be to understand the microscopic mechanism. Here, an overview of recent efforts to unravel the microscopic mechanisms for various types of MITs in correlated materials is provided. Research has focused on transition metal oxides (TMOs), but transition metal chalcogenides have also been studied. Along the way, a new class of MIT materials is discovered, the so–called relativistic Mott insulators in 5d TMOs. Distortions in the MO6 (M = transition metal) octahedron are found to have a large and peculiar effect on the band structure in an orbital dependent way, possibly paving a way to the orbital selective Mott transition. In the final section, the character of the materials suitable for applications is summarized, followed by a brief discussion of some of the efforts to control MITs in correlated materials, including a dynamical approach using light.},
doi = {10.1002/adma.201704777},
journal = {Advanced Materials},
number = 42,
volume = 30,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2018},
month = {Tue May 15 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
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Works referencing / citing this record:
Atomic‐Scale Metal–Insulator Transition in SrRuO 3 Ultrathin Films Triggered by Surface Termination Conversion
journal, December 2019
- Lee, Han Gyeol; Wang, Lingfei; Si, Liang
- Advanced Materials, Vol. 32, Issue 8
Strong and Tunable Electrical Anisotropy in Type‐II Weyl Semimetal Candidate WP 2 with Broken Inversion Symmetry
journal, September 2019
- Su, Bo; Song, Yanpeng; Hou, Yanhui
- Advanced Materials, Vol. 31, Issue 44
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