Raman Scattering as a Probe of the Magnetic State of BEDT-TTF Based Mott Insulators
- Johns Hopkins Univ., Baltimore, MD (United States). Inst. for Quantum Matter and the Dept. of Physics and Astronomy
- Inst. of Problems of Chemical Physics, Chernogolovka (Russia)
- National Science Foundation (NSF), Arlington, VA (United States). Division of Materials Research; Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Quasi-two-dimensional Mott insulators based on BEDT-TTF molecules have recently demonstrated a variety of exotic states, which originate from electron-electron correlations and geometrical frustration of the lattice. Among those states are a triangular S = 1/2 spin liquid and quantum dipole liquid. Here in this article, we show the power of Raman scattering technique to characterize magnetic and electronic excitations of these states. Our results demonstrate a distinction between a spectrum of magnetic excitations in a simple Mott insulator with antiferromagnetic interactions, and a spectrum of an insulator with an additional on-site charge degree of freedom.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National High Magnetic Field Laboratory (NHMFL)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1484855
- Journal Information:
- Crystals, Vol. 8, Issue 6; ISSN 2073-4352
- Publisher:
- MDPICopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 4 works
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