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Title: Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm

Abstract

Here, quasi-two-dimensional semiconductor nanoplatelets (NPLs) have garnered widespread interest because of their uniquely narrow emission spectra and favorable characteristics for optical gain and lasing.(1–5) Strongly quantum confined along thickness, NPLs exhibit the electronic structure of quantum wells determined by their thickness, which can be controlled with atomic precision.(6–10) Among all semiconductor NPLs, CdSe NPLs are probably the most studied. So far, four kinds of CdSe NPLs, emitting at around 396 nm, 463 nm, 513m, and 553 nm, have been intensely investigated for almost a decade.(11–18) Despite some early confusions in identifying actual thicknesses of those NPLs, they have been successfully assigned to be 2-monolayer (2 ML) to 5-monolayer (5 ML) thickness by high-resolution TEM.(19) Here, nML thickness corresponds to n chalcogen layers sandwiched between n + 1 metal layers. Another kind of NPLs with 6MLs of CdSe, once briefly mentioned in 2013,(20) however, was not explored, likely because its synthesis proved hard to reproduce. The 6 ML CdSe NPLs can be prepared by the colloidal atomic layer deposition (c-ALD) method,(21) but there have been no reports on direct synthesis of 6 ML CdSe NPLs, and their direct synthesis has been in doubt as being difficult by traditional approaches.(22,23)

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1];  [1];  [3]; ORCiD logo [4]; ORCiD logo [1]
  1. Univ. of Chicago, Chicago, IL (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
  3. Univ. of Chicago, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States)
  4. Argonne National Lab. (ANL), Lemont, IL (United States); Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1484743
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 20; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Cho, Wooje, Kim, Siyoung, Coropceanu, Igor, Srivastava, Vishwas, Diroll, Benjamin T., Hazarika, Abhijit, Fedin, Igor, Galli, Giulia, Schaller, Richard D., and Talapin, Dmitri V. Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm. United States: N. p., 2018. Web. doi:10.1021/acs.chemmater.8b02489.
Cho, Wooje, Kim, Siyoung, Coropceanu, Igor, Srivastava, Vishwas, Diroll, Benjamin T., Hazarika, Abhijit, Fedin, Igor, Galli, Giulia, Schaller, Richard D., & Talapin, Dmitri V. Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm. United States. doi:10.1021/acs.chemmater.8b02489.
Cho, Wooje, Kim, Siyoung, Coropceanu, Igor, Srivastava, Vishwas, Diroll, Benjamin T., Hazarika, Abhijit, Fedin, Igor, Galli, Giulia, Schaller, Richard D., and Talapin, Dmitri V. Wed . "Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm". United States. doi:10.1021/acs.chemmater.8b02489. https://www.osti.gov/servlets/purl/1484743.
@article{osti_1484743,
title = {Direct Synthesis of Six-Monolayer (1.9 nm) Thick Zinc-Blende CdSe Nanoplatelets Emitting at 585 nm},
author = {Cho, Wooje and Kim, Siyoung and Coropceanu, Igor and Srivastava, Vishwas and Diroll, Benjamin T. and Hazarika, Abhijit and Fedin, Igor and Galli, Giulia and Schaller, Richard D. and Talapin, Dmitri V.},
abstractNote = {Here, quasi-two-dimensional semiconductor nanoplatelets (NPLs) have garnered widespread interest because of their uniquely narrow emission spectra and favorable characteristics for optical gain and lasing.(1–5) Strongly quantum confined along thickness, NPLs exhibit the electronic structure of quantum wells determined by their thickness, which can be controlled with atomic precision.(6–10) Among all semiconductor NPLs, CdSe NPLs are probably the most studied. So far, four kinds of CdSe NPLs, emitting at around 396 nm, 463 nm, 513m, and 553 nm, have been intensely investigated for almost a decade.(11–18) Despite some early confusions in identifying actual thicknesses of those NPLs, they have been successfully assigned to be 2-monolayer (2 ML) to 5-monolayer (5 ML) thickness by high-resolution TEM.(19) Here, nML thickness corresponds to n chalcogen layers sandwiched between n + 1 metal layers. Another kind of NPLs with 6MLs of CdSe, once briefly mentioned in 2013,(20) however, was not explored, likely because its synthesis proved hard to reproduce. The 6 ML CdSe NPLs can be prepared by the colloidal atomic layer deposition (c-ALD) method,(21) but there have been no reports on direct synthesis of 6 ML CdSe NPLs, and their direct synthesis has been in doubt as being difficult by traditional approaches.(22,23)},
doi = {10.1021/acs.chemmater.8b02489},
journal = {Chemistry of Materials},
number = 20,
volume = 30,
place = {United States},
year = {2018},
month = {9}
}

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